Биполярный транзистор MJE4343 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: MJE4343
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 125 W
Макcимально допустимое напряжение коллектор-база (Ucb): 160 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 160 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 16 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 1 MHz
Ёмкость коллекторного перехода (Cc): 800 pf
Статический коэффициент передачи тока (hfe): 20
Корпус транзистора: TO218
MJE4343 Datasheet (PDF)
mje4343 mje4353.pdf
MJE4343 (NPN),MJE4353 (PNP)High-Voltage - High PowerTransistors. . . designed for use in high power audio amplifier applications andhigh voltage switching regulator circuits.http://onsemi.comFeatures16 AMPS High Collector-Emitter Sustaining Voltage -NPN PNP POWER TRANSISTORSVCEO(sus) = 160 Vdc - MJE4343 MJE4353COMPLEMENTARY High DC Current Gain - @ IC = 8.0 Adc h
mje4343.pdf
isc Silicon NPN Power Transistor MJE4343DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 160V(Min)CEO(SUS)DC current gain -: h = 15 (Min) @I = 8 AFE C: h = 8 (Min) @I = 16AFE CComplement to Type MJE4353Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor use in high power audio amplifier andswitching regula
mje4340 mje4341 mje4342 mje4343.pdf
isc Silicon NPN Power Transistors MJE4340/4341/4342/4343DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 100V(Min)- MJE4340CEO(SUS)= 120V(Min)- MJE4341= 140V(Min)- MJE4342= 160V(Min)- MJE4343Low Saturation VoltageComplement to the PNP MJE4350/4351/4352/4353APPLICATIONSDesigned for use in high power audio amplifier applicationsand high voltage switching regul
mje4343g.pdf
MJE4343 (NPN),MJE4353 (PNP)High-Voltage - High PowerTransistors. . . designed for use in high power audio amplifier applications andhigh voltage switching regulator circuits.http://onsemi.comFeatures16 AMPS High Collector-Emitter Sustaining Voltage -NPN PNP POWER TRANSISTORSVCEO(sus) = 160 Vdc - MJE4343 MJE4353COMPLEMENTARY High DC Current Gain - @ IC = 8.0 Adc h
mje4342r.pdf
Order this documentMOTOROLAby MJE4342/DSEMICONDUCTOR TECHNICAL DATANPNMJE4342High-Voltage High PowerMJE4343TransistorsPNPMJE4352. . . designed for use in high power audio amplifier applications and high voltageswitching regulator circuits. High CollectorEmitter Sustaining Voltage MJE4353NPN PNPVCEO(sus) = 140 Vdc MJE4342 MJE4352VCEO(sus) = 160 Vdc
mje4350 mje4351 mje4352 mje4353.pdf
isc Silicon PNP Power Transistors MJE4350/4351/4352/4353DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -100V(Min)- MJE4350CEO(SUS)= -120V(Min)- MJE4351= -140V(Min)- MJE4352= -160V(Min)- MJE4353Low Saturation VoltageComplement to the NPN MJE4340/4341/4342/4343APPLICATIONSDesigned for use in high power audio amplifier applicationsand high voltage switching r
mje4353.pdf
isc Silicon PNP Power Transistor MJE4353DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -160V(Min)CEO(SUS)DC current gain -: h = 15 (Min) @I = -8 AFE C: h = 8 (Min) @I = -16AFE CComplement to Type MJE4343Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor use in high power audio amplifier andswitching reg
Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
Список транзисторов
Обновления
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