All Transistors. MJE4343 Datasheet

 

MJE4343 Datasheet, Equivalent, Cross Reference Search


   Type Designator: MJE4343
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 125 W
   Maximum Collector-Base Voltage |Vcb|: 160 V
   Maximum Collector-Emitter Voltage |Vce|: 160 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 16 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 1 MHz
   Collector Capacitance (Cc): 800 pF
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO218

 MJE4343 Transistor Equivalent Substitute - Cross-Reference Search

   

MJE4343 Datasheet (PDF)

 ..1. Size:246K  onsemi
mje4343 mje4353.pdf

MJE4343
MJE4343

MJE4343 (NPN),MJE4353 (PNP)High-Voltage - High PowerTransistors. . . designed for use in high power audio amplifier applications andhigh voltage switching regulator circuits.http://onsemi.comFeatures16 AMPS High Collector-Emitter Sustaining Voltage -NPN PNP POWER TRANSISTORSVCEO(sus) = 160 Vdc - MJE4343 MJE4353COMPLEMENTARY High DC Current Gain - @ IC = 8.0 Adc h

 ..2. Size:245K  inchange semiconductor
mje4343.pdf

MJE4343
MJE4343

isc Silicon NPN Power Transistor MJE4343DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 160V(Min)CEO(SUS)DC current gain -: h = 15 (Min) @I = 8 AFE C: h = 8 (Min) @I = 16AFE CComplement to Type MJE4353Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor use in high power audio amplifier andswitching regula

 ..3. Size:220K  inchange semiconductor
mje4340 mje4341 mje4342 mje4343.pdf

MJE4343
MJE4343

isc Silicon NPN Power Transistors MJE4340/4341/4342/4343DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 100V(Min)- MJE4340CEO(SUS)= 120V(Min)- MJE4341= 140V(Min)- MJE4342= 160V(Min)- MJE4343Low Saturation VoltageComplement to the PNP MJE4350/4351/4352/4353APPLICATIONSDesigned for use in high power audio amplifier applicationsand high voltage switching regul

 0.1. Size:137K  onsemi
mje4343g.pdf

MJE4343
MJE4343

MJE4343 (NPN),MJE4353 (PNP)High-Voltage - High PowerTransistors. . . designed for use in high power audio amplifier applications andhigh voltage switching regulator circuits.http://onsemi.comFeatures16 AMPS High Collector-Emitter Sustaining Voltage -NPN PNP POWER TRANSISTORSVCEO(sus) = 160 Vdc - MJE4343 MJE4353COMPLEMENTARY High DC Current Gain - @ IC = 8.0 Adc h

 8.1. Size:197K  motorola
mje4342r.pdf

MJE4343
MJE4343

Order this documentMOTOROLAby MJE4342/DSEMICONDUCTOR TECHNICAL DATANPNMJE4342High-Voltage High PowerMJE4343TransistorsPNPMJE4352. . . designed for use in high power audio amplifier applications and high voltageswitching regulator circuits. High CollectorEmitter Sustaining Voltage MJE4353NPN PNPVCEO(sus) = 140 Vdc MJE4342 MJE4352VCEO(sus) = 160 Vdc

 9.1. Size:222K  inchange semiconductor
mje4350 mje4351 mje4352 mje4353.pdf

MJE4343
MJE4343

isc Silicon PNP Power Transistors MJE4350/4351/4352/4353DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -100V(Min)- MJE4350CEO(SUS)= -120V(Min)- MJE4351= -140V(Min)- MJE4352= -160V(Min)- MJE4353Low Saturation VoltageComplement to the NPN MJE4340/4341/4342/4343APPLICATIONSDesigned for use in high power audio amplifier applicationsand high voltage switching r

 9.2. Size:247K  inchange semiconductor
mje4353.pdf

MJE4343
MJE4343

isc Silicon PNP Power Transistor MJE4353DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -160V(Min)CEO(SUS)DC current gain -: h = 15 (Min) @I = -8 AFE C: h = 8 (Min) @I = -16AFE CComplement to Type MJE4343Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor use in high power audio amplifier andswitching reg

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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