Справочник транзисторов. MJE701

 

Биполярный транзистор MJE701 Даташит. Аналоги


   Наименование производителя: MJE701
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 40 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 4 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 750
   Корпус транзистора: TO126
 

 Аналог (замена) для MJE701

   - подбор ⓘ биполярного транзистора по параметрам

 

MJE701 Datasheet (PDF)

 ..1. Size:211K  inchange semiconductor
 mje701.pdf pdf_icon

MJE701

isc Silicon PNP Darlington Power Transistor MJE701DESCRIPTIONCollectorEmitter Breakdown Voltage: V = -60 V(BR)CEODC Current Gain: h = 750(Min) @ I = -2 AFE C= 100(Min) @ I = -4ACComplement to Type MJE801Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose amplifier and low-speed

 0.1. Size:215K  inchange semiconductor
 mje701t.pdf pdf_icon

MJE701

isc Silicon PNP Darlington Power Transistor MJE701TDESCRIPTIONCollectorEmitter Breakdown Voltage: V = -60 V(BR)CEODC Current Gain: h = 750(Min) @ I = -2 AFE C= 100(Min) @ I = -4ACComplement to Type MJE801TMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose amplifier and low-speed

 9.1. Size:256K  motorola
 mje700re.pdf pdf_icon

MJE701

Order this documentMOTOROLAby MJE700/DSEMICONDUCTOR TECHNICAL DATAPNPMJE700,TPlastic DarlingtonComplementary Silicon PowerMJE702TransistorsMJE703. . . designed for generalpurpose amplifier and lowspeed switching applications.NPN High DC Current Gain MJE800,ThFE = 2000 (Typ) @ IC = 2.0 Adc Monolithic Construction with Builtin BaseEmitter Resis

 9.2. Size:51K  fairchild semi
 mje700.pdf pdf_icon

MJE701

MJE700/701/702/703Monolithic Construction With Built-in Base-Emitter Resistors High DC Current Gain : hFE= 750 (Min.) @ IC= -1.5 and -2.0A DC Complement to MJE800/801/802/803TO-12611. Emitter 2.Collector 3.BasePNP Epitaxial Silicon Darlington TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedEquivalent CircuitCSym- UnitParameter Valuebol s VCB

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SD2499 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

 

 
Back to Top

 


 
.