MJE802T. Аналоги и основные параметры

Наименование производителя: MJE802T

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 50 W

Макcимально допустимое напряжение коллектор-база (Ucb): 80 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 4 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Статический коэффициент передачи тока (hFE): 100

Корпус транзистора: TO220

 Аналоги (замена) для MJE802T

- подборⓘ биполярного транзистора по параметрам

 

MJE802T даташит

 ..1. Size:212K  inchange semiconductor
 mje802t.pdf pdf_icon

MJE802T

isc Silicon NPN Darlington Power Transistor MJE802T DESCRIPTION Collector Emitter Breakdown Voltage V = 80 V (BR)CEO DC Current Gain h = 750(Min) @ I = 1.5A FE C = 100(Min) @ I = 4A C Complement to Type MJE702T Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose amplifier and low-speed

 8.1. Size:64K  st
 mje802 mje803.pdf pdf_icon

MJE802T

MJE802 MJE803 SILICON NPN POWER DARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJE802 and MJE803 are silicon epitaxial-base NPN transistors in monolithic Darlington configuration and are mounted in Jedec SOT-32 plastic package.They are intended for use in medium power linear and switching applications. 1 2 3 SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE M

 8.2. Size:126K  onsemi
 mje802g.pdf pdf_icon

MJE802T

MJE700, MJE702, MJE703 (PNP) - MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon http //onsemi.com Power Transistors These devices are designed for general-purpose amplifier and 4.0 AMPERE low-speed switching applications. DARLINGTON POWER Features TRANSISTORS High DC Current Gain - hFE = 2000 (Typ) @ IC COMPLEMENTARY SILICON = 2.0 Adc 40 WATT Monolit

 8.3. Size:214K  inchange semiconductor
 mje802.pdf pdf_icon

MJE802T

isc Silicon NPN Darlington Power Transistor MJE802 DESCRIPTION Collector Emitter Breakdown Voltage V = 80 V (BR)CEO DC Current Gain h = 750(Min) @ I = 1.5A FE C = 100(Min) @ I = 4A C Complement to Type MJE702 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose amplifier and low-speed sw

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы: MJE720, MJE721, MJE722, MJE800, MJE800T, MJE801, MJE801T, MJE802, 2N3906, MJE803, MJE803T, MJE8500, MJE8501, MJE8502, MJE8503, MJE9780, MJF10012