MJE802T Specs and Replacement

Type Designator: MJE802T

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 50 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO220

 MJE802T Substitution

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MJE802T datasheet

 ..1. Size:212K  inchange semiconductor

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MJE802T

isc Silicon NPN Darlington Power Transistor MJE802T DESCRIPTION Collector Emitter Breakdown Voltage V = 80 V (BR)CEO DC Current Gain h = 750(Min) @ I = 1.5A FE C = 100(Min) @ I = 4A C Complement to Type MJE702T Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose amplifier and low-speed ... See More ⇒

 8.1. Size:64K  st

 mje802 mje803.pdf pdf_icon

MJE802T

MJE802 MJE803 SILICON NPN POWER DARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJE802 and MJE803 are silicon epitaxial-base NPN transistors in monolithic Darlington configuration and are mounted in Jedec SOT-32 plastic package.They are intended for use in medium power linear and switching applications. 1 2 3 SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE M... See More ⇒

 8.2. Size:126K  onsemi

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MJE802T

MJE700, MJE702, MJE703 (PNP) - MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon http //onsemi.com Power Transistors These devices are designed for general-purpose amplifier and 4.0 AMPERE low-speed switching applications. DARLINGTON POWER Features TRANSISTORS High DC Current Gain - hFE = 2000 (Typ) @ IC COMPLEMENTARY SILICON = 2.0 Adc 40 WATT Monolit... See More ⇒

 8.3. Size:214K  inchange semiconductor

 mje802.pdf pdf_icon

MJE802T

isc Silicon NPN Darlington Power Transistor MJE802 DESCRIPTION Collector Emitter Breakdown Voltage V = 80 V (BR)CEO DC Current Gain h = 750(Min) @ I = 1.5A FE C = 100(Min) @ I = 4A C Complement to Type MJE702 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose amplifier and low-speed sw... See More ⇒

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Detailed specifications: MJE720, MJE721, MJE722, MJE800, MJE800T, MJE801, MJE801T, MJE802, 2N3906, MJE803, MJE803T, MJE8500, MJE8501, MJE8502, MJE8503, MJE9780, MJF10012

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