Биполярный транзистор MJH16006 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: MJH16006
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 125 W
Макcимально допустимое напряжение коллектор-база (Ucb): 850 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 450 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 8 A
Предельная температура PN-перехода (Tj): 150 °C
Ёмкость коллекторного перехода (Cc): 350 pf
Статический коэффициент передачи тока (hfe): 5
Корпус транзистора: TO218
MJH16006 Datasheet (PDF)
mjh16006.pdf
Order this documentMOTOROLAby MJH16006A/DSEMICONDUCTOR TECHNICAL DATAMJH16006ADesigner's Data SheetNPN Silicon Power TransistorPOWER TRANSISTORS1 kV SWITCHMODE Series8 AMPERES500 VOLTSThese transistors are designed for highvoltage, highspeed, power switching in150 WATTSinductive circuits where fall time is critical. They are particularly suited forlineope
mjh16006.pdf
isc Silicon NPN Power Transistor MJH16006DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ularly suited for li
mjh16008.pdf
isc Silicon NPN Power Transistor MJH16008DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ularly suited for li
mjh16018.pdf
isc Silicon NPN Power Transistor MJH16018DESCRIPTIONCollector-Emitter Voltage-: V = 800V(Min)CEO(SUS)Fast Turn-Off TimeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage, high-speed , power switching ininductive circuits where fall time is critical. They are particu-larly suited for line operated swi
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050 | HSA1037AKS