MJH16006 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

MJH16006 Specs and Replacement

Type Designator: MJH16006

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 125 W

Maximum Collector-Base Voltage |Vcb|: 850 V

Maximum Collector-Emitter Voltage |Vce|: 450 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Collector Capacitance (Cc): 350 pF

Forward Current Transfer Ratio (hFE), MIN: 5

Noise Figure, dB: -

Package: TO218

MJH16006 Substitution

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MJH16006 datasheet

..1. Size:337K motorola

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Order this document MOTOROLA by MJH16006A/D SEMICONDUCTOR TECHNICAL DATA MJH16006A Designer's Data Sheet NPN Silicon Power Transistor POWER TRANSISTORS 1 kV SWITCHMODE Series 8 AMPERES 500 VOLTS These transistors are designed for high voltage, high speed, power switching in 150 WATTS inductive circuits where fall time is critical. They are particularly suited for line ope... See More ⇒

..2. Size:219K inchange semiconductor

mjh16006.pdf pdf_icon

isc Silicon NPN Power Transistor MJH16006 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for li... See More ⇒

7.1. Size:219K inchange semiconductor

mjh16008.pdf pdf_icon

isc Silicon NPN Power Transistor MJH16008 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for li... See More ⇒

8.1. Size:119K njs

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