All Transistors. MJH16006 Datasheet

 

MJH16006 Datasheet, Equivalent, Cross Reference Search


   Type Designator: MJH16006
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 125 W
   Maximum Collector-Base Voltage |Vcb|: 850 V
   Maximum Collector-Emitter Voltage |Vce|: 450 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 350 pF
   Forward Current Transfer Ratio (hFE), MIN: 5
   Noise Figure, dB: -
   Package: TO218

 MJH16006 Transistor Equivalent Substitute - Cross-Reference Search

   

MJH16006 Datasheet (PDF)

 ..1. Size:337K  motorola
mjh16006.pdf

MJH16006
MJH16006

Order this documentMOTOROLAby MJH16006A/DSEMICONDUCTOR TECHNICAL DATAMJH16006ADesigner's Data SheetNPN Silicon Power TransistorPOWER TRANSISTORS1 kV SWITCHMODE Series8 AMPERES500 VOLTSThese transistors are designed for highvoltage, highspeed, power switching in150 WATTSinductive circuits where fall time is critical. They are particularly suited forlineope

 ..2. Size:219K  inchange semiconductor
mjh16006.pdf

MJH16006
MJH16006

isc Silicon NPN Power Transistor MJH16006DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ularly suited for li

 7.1. Size:219K  inchange semiconductor
mjh16008.pdf

MJH16006
MJH16006

isc Silicon NPN Power Transistor MJH16008DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ularly suited for li

 8.1. Size:119K  njs
mjh16012.pdf

MJH16006
MJH16006

 8.2. Size:844K  njs
mjh16010a.pdf

MJH16006
MJH16006

 8.3. Size:119K  njs
mjh16010.pdf

MJH16006
MJH16006

 8.4. Size:97K  njs
mjh16018.pdf

MJH16006
MJH16006

 8.5. Size:219K  inchange semiconductor
mjh16018.pdf

MJH16006
MJH16006

isc Silicon NPN Power Transistor MJH16018DESCRIPTIONCollector-Emitter Voltage-: V = 800V(Min)CEO(SUS)Fast Turn-Off TimeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage, high-speed , power switching ininductive circuits where fall time is critical. They are particu-larly suited for line operated swi

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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