MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT2907LT1/DMMBT2907LT1General Purpose Transistors*MMBT2907ALT1COLLECTORPNP Silicon3*Motorola Preferred Device1BASE23EMITTERMAXIMUM RATINGS1Rating Symbol 2907 2907A Unit2CollectorEmitter Voltage VCEO 40 60 VdcCASE 31808, STYLE 6CollectorBase Voltage VCBO 60 VdcSOT23 (T

Discrete POWER & SignalTechnologiesPN2907 MMBT2907CEC TO-92BBE SOT-23Mark: 2BPNP General Purpose AmplifierThis device is designed for use as general purpose amplifiersand switches requiring collector currents to 500 mA. Sourcedfrom Process 63. See PN2907A for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVC

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM2907 GM2907AMAXIMUM RATINGSMAXIMUM RATINGS MAXIMUM RATINGSCharacteristic Symbol UnitGM2907 GM2907A Collector-Emitter VoltageVCEO -40 -60 Vdc-

MMBT2907MMBT2907ACOLLECTOR3PNP General Purpose Transistors311BASE2SOT-232EMITTERMAXIMUM RATINGSRating Symbol 29072907A Unit-60Collector-Emitter Voltage V -40CEO VdcCollector-Base Voltage VCBO -60VdcEmitter-Base VOltage VEBO -5.0 VdcCollector Current-Continuous ICmAdc-600THERMAL CHARACTERISTICSCharacteristics SymbolUnitMaxTotal Device Dis

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors MMBT2907 TRANSISTOR (NPN) FEATURES Complimentary to MMBT2222 MARKING:2F MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-B

MMBT2907 / MMBT2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. TO-236 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage -VCBO 60 VCollector Emitter Voltage MMBT2907 40 -VCEO V MMBT2907A 60 Emitter

MMBT2907 TRANSISTOR PNPTRANSISTOR PNP TRANSISTOR PNPSOT-23 FEATURES Epitaxial planar die construction Complementary NPN Type available(MMBT2222) 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -60 VVCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V I C Co

SMD PNP TransistorFormosa MSMMBT2907 / MMBT2907AGeneral Purpose PNP TransistorPackage outlineSOT-23Features High collector-emitterbreakdien voltage. PNP silicon epitaxial planar transistor, is designed for generalpurpose and amplifier applications. Capable of 225mW power dissipation. Lead-free parts meet RoHS requirments.(B)(C) Suffix "-H" indicates Ha

MMBT2907/MMBT2907APNP Silicon Epitaxial Planar TransistorSOT-23Features For switching and amplifier applications3The transistor is subdivided into one group according1to its DC current gain.21.B 2.E 3.CAbsolute Maximum Ratings (Ta=25 )Parameter Symbol Value UnitCollector Base Voltage -VCBO 60 VCollector Emitter Voltage MMBT2907 40-VCEO VMMBT2907A60

MMBT2907SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (PNP FEATURES Complimentary to MMBT2222 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage - 60 V VCEO Collector-Emitter Voltage - 60 V VEBO E

MMBT2907 / MMBT2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. Base 2.Emitter 3.Collector SOT-23 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 60 V Collector Emitter Voltage MMBT2907 40 -VCE

AMMBT2907BIPOLAR TRANSISTOR (PNP)FEATURES Complementary to MMBT2222 General purpose Amplifier Surface Mount deviceSOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0 Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise noted)AParameter Symbol Value UnitCollecto

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT2907LT1/DMMBT2907LT1General Purpose Transistors*MMBT2907ALT1COLLECTORPNP Silicon3*Motorola Preferred Device1BASE23EMITTERMAXIMUM RATINGS1Rating Symbol 2907 2907A Unit2CollectorEmitter Voltage VCEO 40 60 VdcCASE 31808, STYLE 6CollectorBase Voltage VCBO 60 VdcSOT23 (T

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT2907AWT1/DPreliminary InformationMMBT2907AWT1General Purpose TransistorPNP SiliconMotorola Preferred DeviceThese transistors are designed for general purpose amplifierapplications. They are housed in the SOT323/SC70 packagewhich is designed for low power surface mount applications.COLLECTOR3311

MMBT2907ASMALL SIGNAL PNP TRANSISTORPRELIMINARY DATAType MarkingMMBT2907A M29 SILICON EPITAXIAL PLANAR PNPTRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGEFOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE NPN COMPLEMENTARY TYPE ISMMBT2222AAPPLICATIONS SOT-23 WELL SUITABLE FOR PORTABLEEQUIPMENT SMALL LOAD SWITCH TRANSISTOR WITHHIGH GAIN AND LOW SATURATIONVOL

MMBT2907AKPNP Epitaxial Silicon TransistorGeneral Purpose TransistorMarking32FK2SOT-2311. Base 2. Emitter 3. CollectorAbsolute Maximum Ratings Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage -60 VVCEO Collector-Emitter Voltage -60 VVEBO Emitter-Base Voltage -5 VIC Collector Current -600 mAPC Collector Power Dissipation 350

PN2907A MMBT2907A PZT2907ACCEECBC TO-92BSOT-23B SOT-223EMark: 2FPNP General Purpose AmplifierThis device is designed for use as a general purpose amplifierand switch requiring collector currents to 500 mA. Sourcedfrom Process 63.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 60 VVCBO C

MMBT2907AT 60V PNP SMALL SIGNAL TRANSISTOR IN SOT523 Features Mechanical Data BVCEO > -60V Case: SOT523 Case Material: Molded Plastic, Green Molding Compound. IC = -600mA Collector Current UL Flammability Rating 94V-0 Epitaxial Planar Die Construction Moisture Sensitivity: Level 1 per J-STD-020 Ultra-Small Surface Mount Package Terminal

MMBT2907A 60V PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Epitaxial Planar Die Construction Case: SOT23 Ideal for Low Power Amplification and Switching Case Material: Molded Plastic, Green Compound; Complementary NPN Type: MMBT2222A UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) M

SMBT2907A/MMBT2907APNP Silicon Switching Transistor Low collector-emitter saturation voltage23 Complementary type: 1 SMBT2222A / MMBT2222A (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101Type Marking Pin Configuration PackageSMBT2907A/MMBT2907A s2F SOT231 = B 2 = E 3 = CMaximum RatingsParameter Symbol Value Unit60 VCollector-emitter

MMBT2907ATFeatures Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating PNP Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSGeneral PurposeCompliant. See Ordering Information)AmplifierMaximum Ratings @ 25C Unless Otherwise SpecifiedSOT-523 Operating Junction Temperature Range: -55 to

MCCMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMMBT2907AMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Capable of 350mWatts of Pd, 600mA continuous collector current.PNP General Operatingand Storage JunctionT

MMBT2907AFeatures Halogen Free Available Upon Request By Adding Suffix "-HF" Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating PNP Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSGeneral PurposeCompliant. See Ordering Information)AmplifierMaximum Ratings @ 25C Unless Otherwise Specified Operating Junction Temperature Range: -5

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

MMBT2907AM3T5GPNP General PurposeTransistorThe MMBT2907AM3T5G device is a spin-off of our popularSOT-23 three-leaded device. It is designed for general purposeamplifier applications and is housed in the SOT-723 surface mounthttp://onsemi.compackage. This device is ideal for low-power surface mountapplications where board space is at a premium.FeaturesCOLLECTOR3 Reduce

MMBT2907AWT1G,NSVMMBT2907AWT1GGeneral Purpose TransistorPNP SiliconThese transistors are designed for general purpose amplifierhttp://onsemi.comapplications. They are housed in the SC-70/SOT-323 package whichis designed for low power surface mount applications.COLLECTORFeatures 3 NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Re

MMBT2907ALT1GGeneral Purpose TransistorsPNP SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.comCompliantCOLLECTOR3MAXIMUM RATINGS1Rating Symbol Value UnitBASECollector-Emitter Voltage VCEO -60 VdcCollector-Base Voltage VCBO -60 Vdc2EMITTEREmitter-Base Voltage VEBO -5.0 VdcCollector Current - Continuous IC -600 mAdc

MMBT2907AL,SMMBT2907ALGeneral Purpose TransistorsPNP Siliconwww.onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueCOLLECTORSite and Control Change Requirements; AEC-Q101 Qualified and3PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1CompliantBASEMAXIMUM RATINGS2EMITTERRating Symbol Value UnitCo

MMBT2907AL,SMMBT2907ALGeneral Purpose TransistorsPNP Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant3 S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualified and1PPAP CapableBASEMAXIMUM RATINGS2EMITTERRating Symbol Value Unit

MMBT2907AM3T5GPNP General PurposeTransistorThe MMBT2907AM3T5G device is a spin-off of our popularSOT-23 three-leaded device. It is designed for general purposeamplifier applications and is housed in the SOT-723 surface mountwww.onsemi.compackage. This device is ideal for low-power surface mountapplications where board space is at a premium.FeaturesCOLLECTOR3 Reduces B

MMBT2907AWT1G,NSVMMBT2907AWT1GGeneral Purpose TransistorPNP SiliconThese transistors are designed for general purpose amplifierwww.onsemi.comapplications. They are housed in the SC-70/SOT-323 package whichis designed for low power surface mount applications.COLLECTORFeatures3 NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requ

MMBT2907AWT1GGeneral Purpose TransistorPNP SiliconThese transistors are designed for general purpose amplifierapplications. They are housed in the SC-70/SOT-323 package whichis designed for low power surface mount applications.http://onsemi.comFeaturesCOLLECTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS3Compliant1MAXIMUM RATINGSBASERating Symb

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

MMBT2907AWT1G,NSVMMBT2907AWT1GGeneral Purpose TransistorPNP SiliconThese transistors are designed for general purpose amplifierhttp://onsemi.comapplications. They are housed in the SC-70/SOT-323 package whichis designed for low power surface mount applications.COLLECTORFeatures 3 NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Re

MMBT2907AL,SMMBT2907ALGeneral Purpose TransistorsPNP Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant3 S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualified and1PPAP CapableBASEMAXIMUM RATINGS2EMITTERRating Symbol Value Unit

UNISONIC TECHNOLOGIES CO., LTD MMBT2907A PNP SILICON TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER DESCRIPTION This UTC MMBT2907A is designed for use as a general purpose amplifier and switch requiring collector currents to 600 mA. ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3MMBT2907AG-AE3-R SOT-23 E B C Tape ReelMMBT2907AG-AL3-R SOT-323 E

MMBT2907APNP Silicon TransistorDescriptions PIN Connection General purpose application Switching application Features 3 Low Leakage current 1 Low collector saturation voltage enabling 2low voltage operation SOT-23 Complementary pair with MMBT2222A Ordering Information Type NO. Marking Package Code 2F MMBT2907A SOT-23

MMBT2907AW PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product SOT-323 A suffix of -C specifies halogen & lead-free FEATURE AL Complementary NPN Type Available(MMBT2222AW)33 Epitaxial Planar Die Construction Top View C B Ideal for Medium Power Amplification and Switching 11 22K EDCOLLECTORH JF G3M

MMBT2907QPNP Silicon Elektronische BauelementeGeneral Purpose TransistorRoHS Compliant ProductDD1A* FeaturesSOT-89 b11Power dissipation2bCeO3PCM : 1.25 W (Temp.= 25 C)e11.B AS ECollector currentDimensions In Millimeters Dimensions In Inches2.C OLLE C T ORSymbolICM : -0.6 A3 Min Max Min Max3.E MIT T E RA 1.400 1.600 0.055 0.063Collector

MMBT2907FW PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-523 AL3FEATURES 3Top View C B Epitaxial Planar Die Construction 11 2 Complementary NPN Type Available(MMBT2222FW) 2K ECollector Ideal for Medium Power Amplification and Switching DMAR

MMBT2907APNP SiliconElektronische Bauelemente General Purpose TransistorRoHS Compliant ProductFEATURESA suffix of "-C" specifies halogen & lead-free Epitaxial Planar Die Construction Complementary NPN Type AvailableA(MMBT2222A)COLLECTOR L Ideal for Medium Power Amplification and333SwitchingSTop ViewB111 2BASE 2V G2EMITTERCHJDKMAXIMUM

MMBT2907A350mW, PNP Small Signal TransistorSmall Signal ProductFeatures SOT-23 Epitaxial planar die construction Surface device type mounting Moisture sensitivity level 1 Matte Tin(Sn) lead finish with Nickel(Ni) underplate Pb free version and RoHS compliant Green compound (Halogen free) with suffix "G" onpacking code and prefix "G" on date codeMechanical

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate TransistorsMMBT2907AT TRANSISTOR (PNP)FEATURES SOT523 Complementary to NPN Type (MMBT2222AT) Small PackageMARKING:2F MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit1. BASEVCBO Collector-Base Voltage -60 V 2. EMITTERVCEO Collector-Emitter Voltage -60 V 3. CO

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT2907A TRANSISTOR (PNP) FEATURES Epitaxial planar die construction 1. BASE Complementary NPN Type available(MMBT2222A) 2. EMITTER 3. COLLECTOR Marking: 2F MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage

Zowie Technology CorporationGeneral Purpose TransistorPNP SiliconHalogen-free typeLead free productCOLLECTOR33BASE1MMBT2907AGH 122SOT-23EMITTERMAXIMUM RATINGSRating Symbol Value UnitCollector-Emitter Voltage VCEO -60 VdcCollector-Base Voltage VCBO -60 VdcEmitter-Base Voltage VEBO -5.0 VdcCollector Current-Continuous IC -600 mAdcTHERMAL CHARACTERISTICS

MMBT2907A TRANSISTPR(PNP)SOT-23 FEATURES Epitaxial planar die construction 1. BASE Complementary NPN Type available(MMBT2222A) 2. EMITTER 3. COLLECTOR Marking: 2F MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -60 VVCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current

MMBT2907A SOT-23 Transistor(PNP)SOT-231. BASE 2. EMITTER 3. COLLECTOR FeaturesEpitaxial planar die construction Complementary NPN Type available(MMBT2222A) MARKING:2F Dimensions in inches and (millimeters)MAXIMUM RATINGS(TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emit

MMBT2907A PNP General Purpose Amplifier1. BASE 2. EMITTER3. COLLECTOR A SOT-23 FEATURES Dim Min MaxA 2.70 3.10E Epitaxial planar die construction. B 1.10 1.50K BC 1.0 Typical Complementary NPN type available D 0.4 TypicalE 0.35 0.48JMMBT2222A. DG 1.80 2.00GH 0.02 0.1 Ideal for medium power amplification and switching. J 0.1 TypicalHK 2.20 2.6

MMBT2907ATCOLLECTOR3PNP General Purpose Transistors3112BASE2 SOT-523(SC-75)EMITTERMAXIMUM RATINGSValueRating SymbolUnit-60Collector-Emitter Voltage VCEO Vdc-60Collector-Base Voltage VCBOVdcEmitter-Base Voltage VEBO -5.0 VdcCollector Current-Continuous ICmAdc-600THERMAL CHARACTERISTICSCharacteristics SymbolUnitMax(1)Total Device Dissipa

MMBT2907AWCOLLECTOR3PNP General Purpose Transistors31BASE122EMITTERSOT-323(SC-70)MAXIMUM RATINGSValueRating SymbolUnit-60Collector-Emitter Voltage VCEO Vdc-60Collector-Base Voltage VCBOVdcEmitter-Base VOltage VEBO -5.0 VdcCollector Current-Continuous ICmAdc-600THERMAL CHARACTERISTICSCharacteristics SymbolUnitMaxTotal Device Dissipation

FM120-M WILLASTHRUMMBT2907AWT1FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VGeneral Purpose TransistorSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123HPNP Silicon Low profile surface mounted application in order t

FM120-M WILLASTHRUMMBT2907(A)LT1FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VGeneral Purpose TransistorSOD-123 PACKAGE Pb Free ProductPackage outlineFeaturesPNP Siliconesign, excellent power dissipation offers Batch process d better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order

FM120-M WILLAS MMBT2907ADW1T1THRUDual General Purpose Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to opti

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT2907A TRANSISTOR (PNP) FEATURES Epitaxial planar die construction 1. BASE Complementary NPN Type available(MMBT2222A) 2. EMITTER 3. COLLECTOR Marking: 2F MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -60 V

Spec. No. : C305N3 Issued Date : 2002.06.11 CYStech Electronics Corp.Revised Date :2010.07.14 Page No. : 1/ 6 General Purpose PNP Epitaxial Planar Transistor MMBT2907ADescription The MMBT2907A is designed for using in driver stage of AF amplifier and general purpose amplification. Large IC , IC(Max)= -0.6A Low VCE(sat), ideal for low-voltage operation. C

MMBT2907A Rev.G Aug.-2018 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features 600mACollector currents to 600mA. / Applications General purpose amplifier. / Equivalent Circuit / Pinni

MMBT2907ALTGPNP Silicon General Purpose TransistorFeaturesPackage outline Pb-Free Package May be Available. The G-Suffix Denotes aPb-Free Lead Finish3Maximum Ratings1Rating Symbol 2907A Unit2Collector-Emitter Voltage VCEO -60 VdcCollector-Base Voltage VCBO -60 VdcSOT23Emitter-Base Voltage VEBO -5.0 VdcCollector Current - Continuous IC -600 mAdc3COLLECTOR

SMD Type TransistorsPNP TransistorsMMBT2907AT (KMBT2907AT)SOT-523 U nit: m m+0.11.6 -0.1+0.11.0 -0.1+0.050.2 -0.05 0.150.05 Features2 1 Small Package Complementary to MMBT2222AT30.30.05+0.10.5-0.11. Base2. Emitter3. Collecter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Col

e s st sPNP TransistorsMMBT2907A (KMBT2907A)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.131 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -60 V Emitter - Base Voltage VEBO -5 Collector

MMBT2907AWPNP GENERAL PURPOSE SWITCHING TRANSISTORUnit: inch (mm)SOT-323 POWER 225 mWVOLTAGE 60 VoltsFEATURESPNP epitaxial silicon, planar designCollector-emitter voltage VCE = -60V0.087(2.20)0.070(1.80)Collector current IC = -600mA Lead free in compliance with EU RoHS2.0 (2011/65/EU & 2015/865/EU directive) 0.054(1.35) Green molding compound as per IEC61249 Std.

MMBT2907APNP GENERAL PURPOSE SWITCHING TRANSISTOR225 mW 60 Volts POWERVOLTAGEFEATURES0.120(3.04)PNP epitaxial silicon, planar design0.110(2.80)Collector-emitter voltage VCE = -60VCollector current IC = -600mA 0.056(1.40)0.047(1.20)MECHANICAL DATA

MMBT2907A-AUPNP GENERAL PURPOSE SWITCHING TRANSISTOR POWER 225 mWattVOLTAGE 60 VoltFEATURESPNP epitaxial silicon, planar design 0.120(3.04)0.110(2.80)Collector-emitter voltage VCE = -60VCollector current IC = -600mAAEC-Q101 qualifiedLead free in compliance with EU RoHS 2.0 0.056(1.40)Green molding compound as per IEC 61249 standard0.047(1.20)0.079(2.00) 0.008(0.20)

General Purpose TransistorMMBT2907A-G (PNP)RoHS DeviceFeaturesSOT-23 -Epitaxial planar die construction -Device is designed as a general purpose0.118(3.00)0.110(2.80)amplifier and switching.3 -Useful dynamic range exceeds to 600mA0.055(1.40)0.047(1.20) As a switch and to 100MHz as an amplifier.1 20.079(2.00)0.071(1.80)0.006(0.15)0.003(0.08)0.041(1.05)0.

General Purpose TransistorMMBT2907-G (PNP)RoHS DeviceSOT-23Features -Epitaxial planar die construction0.119 (3.00)0.110 (2.80) -Device is designed as a general purpose3amplifier and switching.0.056 (1.40)0.047 (1.20)1 20.083 (2.10)0.006 (0.15)Collector3 0.002 (0.05)0.066 (1.70)0.044 (1.10) 0.103 (2.60)0.035 (0.90) 0.086 (2.20)1Base0.006 (0.15) max

Product specification PNP General Purpose Amplifier MMBT2907A FEATURES Pb Epitaxial planar die construction. Lead-free Complementary NPN type available MMBT2222A. Ideal for medium power amplification and switching. MSL 1APPLICATIONS This device is designed as a general purpose amplifier and switching. SOT-23 The useful dynamic range extends to 6

GSTMMBT2907A PNP General Purpose Transistor Product Description Features This device is designed as a general purpose Lead(Pb)-Freeamplifier and switch. Packages & Pin Assignments GSTMMBT2907AF(SOT-23) Pin Description1 Base 2 Emitter 3 Collector Marking Information P/N Package Part Marking GSTMMBT2907AF SOT-23 2FOrdering Information GS P/NGSTMMBT2907A FPb Free

MMBT2907ASOT-23Features(TO-236) PNP Silicon Epitaxial Planar Transistor For Switching and Amplifier Applications.Marking:2F The transistor is subdivided into one group accordingto its DC current gain1 Base 2. Emitter 3. CollectorAbsolute Maximum Ratings (T =25, unless otherwisenoted)AParameter Symbol Value UnitCollector Base Voltage -V 60 VCBOCollector

MMBT2907ATransistors SOT-23 Plastic-Encapsulate Transistors(PNP) RHOS FeaturesSOT-23 Epitaxial planar die construction Complementary NPN Type available(MMBT2222A) Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -60 V1. BASE VCEO Collector-Emitter Voltage -60 V 2. EMITTE

MMBT2907A SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( P NP )SOT- 23Features Epitaxial planar die construction Complementary NPN Type available(MMBT2222A) Marking: 2FSymbol Parameter Value Unit VCBO Collector-Base Voltage -60 V V Collector-Emitter Voltage -60 V CEOV Emitter-Base Voltage -5 V EBOCI Collector Current -600 mA CP Collector P

MMBT2907A PNP General Purpose Amplifier FEATURES Epitaxial planar die construction. Complementary NPN type available MMBT2222A. Ideal for medium power amplification and switching. MSL 1 APPLICATIONS This device is designed as a general purpose amplifier and switching. SOT-23 The useful dynamic range extends to 600mA as a switch and to 100MHz as a

MMBT2907A SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT2907A TRANSISTOR (PNP) FEATURES Epitaxial planar die construction Complementary NPN Type available(MMBT2222A) 1. BASE 2. EMITTER Marking: 2F 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -60 VVCEO Collector-Emitter Voltage -60 VV

www.msksemi.comMMBT2907A-MSSemiconductor CompianceSemiconductor CompianceTRANSISTOR (PNP)FEATURES Epitaxial planar die construction Complementary NPN Type available(MMBT2222A-MS)1. BASEMarking: 2F 2. EMITTERSOT23 3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -60 VVCEO Collector-Emitter

DATA SHEET MMBT2907A GENERAL PURPOSE TRANSISTOR PNP VOLTAGE -60 Volts POWER 300 mW FEATURES HIGH DC CURRENT GAIN. LOW COLLECTOR-EMITTER SATURATION VOLTAGE BOTH NORMAL AND PB-FREE PACKAGE ARE AVAILABLE. LEAD FREE AND HALOGEN-FREE MECHANICAL DATA CASESOT-23 TERMINALSOLDERABLE PER MIL-STD-202, METHOD 208 APPROX. WEIGHT:0.008GRAM CASESOT-23 MAXIM

Jingdao Microelectronics co.LTD MMBT2907AMMBT2907ASOT-23PNP TRANSISTOR3FEATURES Epitaxial planar die construction Complementary NPN Type available(MMBT2222A) 1MAXIMUM RATINGS (Ta=25 unless otherwise noted)2SymbolParameter Value Unit1.BASECollectorBase Voltage VCBO -60 V2.EMITTER3.COLLECTORColle

MMBT2907ASOT-23 BIPOLAR TRANSISTORS (PNP)FEATURES* Power dissipationPCM 0.3 W(Tamb=25OC)Collector current*ICM -0.6 A* Collector-base voltageV(BR)CBO: -60 VSOT-23Operating and storage junction temperature range* TJ,Tstg: -55OCto+150OCCOLLECTOR3MECHANICAL DATA1* Case: Molded plastic BASE 0.055(1.40)* Epoxy: UL 94V-O rate flame retardant0.047(1.20)2* L

MMBT2907A SOT-23 PNP Transistors32 1.Base 2.Emitter1 3.Collector Simplified outline(SOT-23) MarkingMarking 2F Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector - Base Voltage VCBO -60Collector - Emitter Voltage VCEO -60 VEmitter - Base Voltage VEBO -5Collector Current - Continuous IC 600 mAPower Dissipation PD 250

MMBT2907AAO3400SI2305SOT-23 Plastic-Encapsulate Transistors MMBT2907A TRANSISTOR (PNP)FEATURES Epitaxial planar die construction Complementary NPN Type available(MMBT2222A) Base 2.Emitter 3.Collector Marking: 2F SOT-23 Plastic PackageMAXIMUM RATINGS (Ta=25 unless otherwise noted)Symbol Parameter Value UnitVCBO -60 VCollector-Base VoltageVCEO Collector-Emitte

RoHS RoHSCOMPLIANT COMPLIANTMMBT2907AQ PNP General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 High Conductance Part no. with suffix Q means AEC-Q101 qualified Applications Switching and linear amplification Mechanical Data : SOT-23 Case Terminals: Tin plated lea

RoHS RoHSCOMPLIANT COMPLIANTMMBT2907A PNP General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisure Sensitivity Level 1 High Conductance Surface mount package ideally Suited for Automatic Insertion Mechanical Data Package: SOT-23 Molding compound meets UL 94

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTDMMBT2907AFEATURES PNP Switching TransistorMAXIMUM RATINGS Characteristic Symbol UnitMMBT2907 MMBT2907A Collector-Emitter VoltageV -40 -60 VdcCEO-Collector-Base VoltageV -60 -60 VdcCBO-

MMBT2907APNP GENERAL PURPOSE SWITCHING TRANSISTOR60Volts POWER 300mWattsVOLTAGEFEATURESPNP epitaxial silicon, planar design. Collector-emitter voltage VCE=-60V.Collector current IC=-0.6A.ansition frequency fT>200MHz @ IC=-Tr20mAdc, VCE=-50Vdc, f=100MHz.In compliance with EU RoHS 2002/95/EC directives.MECHANICAL DATACase: SOT-23, Plastic3Terminal

MMBT2907ACSilicon Epitaxial Planar Transistor( PNP)EFeaturesBEpitaxial planar die construction.SOT-23 Mark: 2FComplementary NPN Type available(MMBT2222A)Absolute Maximum Ratings*T= 25C unless otherwise notedASymbol Parameter Value UnitsV Collector-Base Voltage - 60VCBOVCEO VCollector-Emitter Voltage - 60VEmitter-Base VoltageEBO - 5 VI Collector Curren

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTORFeatures Epitaxial Planar Die Construction. NPN complement:MMBT2222AASOT-23 Ideal for Medium Power Amplification andCDim Min MaxSwitching.A0.37 0.51B C Marking Code:2FB1.20 1.40TOP VIEWB ECD 2.30 2.50EGD0.89 1.03E0.45 0.60HG1.78 2.05KH2.80 3.00JJ0.013 0.10K0.90

isc Silicon PNP Transistor MMBT2907ADESCRIPTIONLow Voltage UseUltra Super Mini Mold PackageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in low noise and small signal amplifiersfrom VHF band to UHF bandABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -60 VCBO