MMBT2907LT1 - описание и поиск аналогов

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT2907LT1/D MMBT2907LT1 General Purpose Transistors * MMBT2907ALT1 COLLECTOR PNP Silicon 3 *Motorola Preferred Device 1 BASE 2 3 EMITTER MAXIMUM RATINGS 1 Rating Symbol 2907 2907A Unit 2 Collector Emitter Voltage VCEO 40 60 Vdc CASE 318 08, STYLE 6 Collector Base Voltage VCBO 60 Vdc SOT 23 (T

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT2907LT1/D MMBT2907LT1 General Purpose Transistors * MMBT2907ALT1 COLLECTOR PNP Silicon 3 *Motorola Preferred Device 1 BASE 2 3 EMITTER MAXIMUM RATINGS 1 Rating Symbol 2907 2907A Unit 2 Collector Emitter Voltage VCEO 40 60 Vdc CASE 318 08, STYLE 6 Collector Base Voltage VCBO 60 Vdc SOT 23 (T

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT2907AWT1/D Preliminary Information MMBT2907AWT1 General Purpose Transistor PNP Silicon Motorola Preferred Device These transistors are designed for general purpose amplifier applications. They are housed in the SOT 323/SC 70 package which is designed for low power surface mount applications. COLLECTOR 3 3 1 1

MMBT2907A SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA Type Marking MMBT2907A M29 SILICON EPITAXIAL PLANAR PNP TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE NPN COMPLEMENTARY TYPE IS MMBT2222A APPLICATIONS SOT-23 WELL SUITABLE FOR PORTABLE EQUIPMENT SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SATURATION VOL

Discrete POWER & Signal Technologies PN2907 MMBT2907 C E C TO-92 B B E SOT-23 Mark 2B PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 63. See PN2907A for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VC

MMBT2907AK PNP Epitaxial Silicon Transistor General Purpose Transistor Marking 3 2FK 2 SOT-23 1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current -600 mA PC Collector Power Dissipation 350

PN2907A MMBT2907A PZT2907A C C E E C B C TO-92 B SOT-23 B SOT-223 E Mark 2F PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 60 V VCBO C

MMBT2907AT 60V PNP SMALL SIGNAL TRANSISTOR IN SOT523 Features Mechanical Data BVCEO > -60V Case SOT523 Case Material Molded Plastic, Green Molding Compound. IC = -600mA Collector Current UL Flammability Rating 94V-0 Epitaxial Planar Die Construction Moisture Sensitivity Level 1 per J-STD-020 Ultra-Small Surface Mount Package Terminal

MMBT2907A 60V PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Epitaxial Planar Die Construction Case SOT23 Ideal for Low Power Amplification and Switching Case Material Molded Plastic, Green Compound; Complementary NPN Type MMBT2222A UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) M

SMBT2907A/MMBT2907A PNP Silicon Switching Transistor Low collector-emitter saturation voltage 2 3 Complementary type 1 SMBT2222A / MMBT2222A (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking Pin Configuration Package SMBT2907A/MMBT2907A s2F SOT23 1 = B 2 = E 3 = C Maximum Ratings Parameter Symbol Value Unit 60 V Collector-emitter

MMBT2907AT Features Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating PNP Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS General Purpose Compliant. See Ordering Information) Amplifier Maximum Ratings @ 25 C Unless Otherwise Specified SOT-523 Operating Junction Temperature Range -55 to

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth MMBT2907A Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Capable of 350mWatts of Pd, 600mA continuous collector current. PNP General Operatingand Storage JunctionT

MMBT2907A Features Halogen Free Available Upon Request By Adding Suffix "-HF" Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating PNP Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS General Purpose Compliant. See Ordering Information) Amplifier Maximum Ratings @ 25 C Unless Otherwise Specified Operating Junction Temperature Range -5

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MMBT2907AM3T5G PNP General Purpose Transistor The MMBT2907AM3T5G device is a spin-off of our popular SOT-23 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-723 surface mount http //onsemi.com package. This device is ideal for low-power surface mount applications where board space is at a premium. Features COLLECTOR 3 Reduce

MMBT2907AWT1G, NSVMMBT2907AWT1G General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier http //onsemi.com applications. They are housed in the SC-70/SOT-323 package which is designed for low power surface mount applications. COLLECTOR Features 3 NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Re

MMBT2907ALT1G General Purpose Transistors PNP Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO -60 Vdc Collector-Base Voltage VCBO -60 Vdc 2 EMITTER Emitter-Base Voltage VEBO -5.0 Vdc Collector Current - Continuous IC -600 mAdc

MMBT2907AL, SMMBT2907AL General Purpose Transistors PNP Silicon www.onsemi.com Features S Prefix for Automotive and Other Applications Requiring Unique COLLECTOR Site and Control Change Requirements; AEC-Q101 Qualified and 3 PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE MAXIMUM RATINGS 2 EMITTER Rating Symbol Value Unit Co

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MMBT2907AL, SMMBT2907AL General Purpose Transistors PNP Silicon http //onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and 1 PPAP Capable BASE MAXIMUM RATINGS 2 EMITTER Rating Symbol Value Unit

MMBT2907AM3T5G PNP General Purpose Transistor The MMBT2907AM3T5G device is a spin-off of our popular SOT-23 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-723 surface mount www.onsemi.com package. This device is ideal for low-power surface mount applications where board space is at a premium. Features COLLECTOR 3 Reduces B

MMBT2907AWT1G, NSVMMBT2907AWT1G General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier www.onsemi.com applications. They are housed in the SC-70/SOT-323 package which is designed for low power surface mount applications. COLLECTOR Features 3 NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requ

MMBT2907AWT1G General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC-70/SOT-323 package which is designed for low power surface mount applications. http //onsemi.com Features COLLECTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 3 Compliant 1 MAXIMUM RATINGS BASE Rating Symb

ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

MMBT2907AWT1G, NSVMMBT2907AWT1G General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier http //onsemi.com applications. They are housed in the SC-70/SOT-323 package which is designed for low power surface mount applications. COLLECTOR Features 3 NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Re

MMBT2907AL, SMMBT2907AL General Purpose Transistors PNP Silicon http //onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and 1 PPAP Capable BASE MAXIMUM RATINGS 2 EMITTER Rating Symbol Value Unit

UNISONIC TECHNOLOGIES CO., LTD MMBT2907A PNP SILICON TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER DESCRIPTION This UTC MMBT2907A is designed for use as a general purpose amplifier and switch requiring collector currents to 600 mA. ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3 MMBT2907AG-AE3-R SOT-23 E B C Tape Reel MMBT2907AG-AL3-R SOT-323 E

MMBT2907A PNP Silicon Transistor Descriptions PIN Connection General purpose application Switching application Features 3 Low Leakage current 1 Low collector saturation voltage enabling 2 low voltage operation SOT-23 Complementary pair with MMBT2222A Ordering Information Type NO. Marking Package Code 2F MMBT2907A SOT-23

MMBT2907AW PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product SOT-323 A suffix of -C specifies halogen & lead-free FEATURE A L Complementary NPN Type Available(MMBT2222AW) 3 3 Epitaxial Planar Die Construction Top View C B Ideal for Medium Power Amplification and Switching 1 1 2 2 K E D COLLECTOR H J F G 3 M

MMBT2907Q PNP Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product D D1 A * Features SOT-89 b1 1 Power dissipation 2 b C e O 3 PCM 1.25 W (Temp.= 25 C) e1 1.B AS E Collector current Dimensions In Millimeters Dimensions In Inches 2.C OLLE C T OR Symbol ICM -0.6 A 3 Min Max Min Max 3.E MIT T E R A 1.400 1.600 0.055 0.063 Collector

MMBT2907FW PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-523 A L 3 FEATURES 3 Top View C B Epitaxial Planar Die Construction 1 1 2 Complementary NPN Type Available(MMBT2222FW) 2 K E Collector Ideal for Medium Power Amplification and Switching D MAR

MMBT2907A PNP Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product FEATURES A suffix of "-C" specifies halogen & lead-free Epitaxial Planar Die Construction Complementary NPN Type Available A (MMBT2222A) COLLECTOR L Ideal for Medium Power Amplification and 3 3 3 Switching S Top View B 1 1 1 2 BASE 2 V G 2 EMITTER C H J D K MAXIMUM

MMBT2907A 350mW, PNP Small Signal Transistor Small Signal Product Features SOT-23 Epitaxial planar die construction Surface device type mounting Moisture sensitivity level 1 Matte Tin(Sn) lead finish with Nickel(Ni) underplate Pb free version and RoHS compliant Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code Mechanical

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Transistors MMBT2907AT TRANSISTOR (PNP) FEATURES SOT 523 Complementary to NPN Type (MMBT2222AT) Small Package MARKING 2F MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE VCBO Collector-Base Voltage -60 V 2. EMITTER VCEO Collector-Emitter Voltage -60 V 3. CO

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT2907A TRANSISTOR (PNP) FEATURES Epitaxial planar die construction 1. BASE Complementary NPN Type available(MMBT2222A) 2. EMITTER 3. COLLECTOR Marking 2F MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage

Zowie Technology Corporation General Purpose Transistor PNP Silicon Halogen-free type Lead free product COLLECTOR 3 3 BASE 1 MMBT2907AGH 1 2 2 SOT-23 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO -60 Vdc Collector-Base Voltage VCBO -60 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current-Continuous IC -600 mAdc THERMAL CHARACTERISTICS

MMBT2907A TRANSISTPR(PNP) SOT-23 FEATURES Epitaxial planar die construction 1. BASE Complementary NPN Type available(MMBT2222A) 2. EMITTER 3. COLLECTOR Marking 2F MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current

MMBT2907A SOT-23 Transistor(PNP) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Epitaxial planar die construction Complementary NPN Type available(MMBT2222A) MARKING 2F Dimensions in inches and (millimeters) MAXIMUM RATINGS(TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emit

MMBT2907A PNP General Purpose Amplifier 1. BASE 2. EMITTER 3. COLLECTOR A SOT-23 FEATURES Dim Min Max A 2.70 3.10 E Epitaxial planar die construction. B 1.10 1.50 K B C 1.0 Typical Complementary NPN type available D 0.4 Typical E 0.35 0.48 J MMBT2222A. D G 1.80 2.00 G H 0.02 0.1 Ideal for medium power amplification and switching. J 0.1 Typical H K 2.20 2.6

MMBT2907AT COLLECTOR 3 PNP General Purpose Transistors 3 1 1 2 BASE 2 SOT-523(SC-75) EMITTER MAXIMUM RATINGS Value Rating Symbol Unit -60 Collector-Emitter Voltage V CEO Vdc -60 Collector-Base Voltage VCBO Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current-Continuous IC mAdc -600 THERMAL CHARACTERISTICS Characteristics Symbol Unit Max (1) Total Device Dissipa

MMBT2907AW COLLECTOR 3 PNP General Purpose Transistors 3 1 BASE 1 2 2 EMITTER SOT-323(SC-70) MAXIMUM RATINGS Value Rating Symbol Unit -60 Collector-Emitter Voltage V CEO Vdc -60 Collector-Base Voltage VCBO Vdc Emitter-Base VOltage VEBO -5.0 Vdc Collector Current-Continuous IC mAdc -600 THERMAL CHARACTERISTICS Characteristics Symbol Unit Max Total Device Dissipation

MMBT2907 MMBT2907A COLLECTOR 3 PNP General Purpose Transistors 3 1 1 BASE 2 SOT-23 2 EMITTER MAXIMUM RATINGS Rating Symbol 2907 2907A Unit -60 Collector-Emitter Voltage V -40 CEO Vdc Collector-Base Voltage VCBO -60 Vdc Emitter-Base VOltage VEBO -5.0 Vdc Collector Current-Continuous IC mAdc -600 THERMAL CHARACTERISTICS Characteristics Symbol Unit Max Total Device Dis

FM120-M WILLAS THRU MMBT2907AWT1 FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V General Purpose Transistor SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H PNP Silicon Low profile surface mounted application in order t

FM120-M WILLAS THRU MMBT2907(A)LT1 FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V General Purpose Transistor SOD-123 PACKAGE Pb Free Product Package outline Features PNP Siliconesign, excellent power dissipation offers Batch process d better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order

FM120-M WILLAS MMBT2907ADW1T1 THRU Dual General Purpose Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to opti

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT2907A TRANSISTOR (PNP) FEATURES Epitaxial planar die construction 1. BASE Complementary NPN Type available(MMBT2222A) 2. EMITTER 3. COLLECTOR Marking 2F MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V

Spec. No. C305N3 Issued Date 2002.06.11 CYStech Electronics Corp. Revised Date 2010.07.14 Page No. 1/ 6 General Purpose PNP Epitaxial Planar Transistor MMBT2907A Description The MMBT2907A is designed for using in driver stage of AF amplifier and general purpose amplification. Large IC , IC(Max)= -0.6A Low VCE(sat), ideal for low-voltage operation. C

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors MMBT2907 TRANSISTOR (NPN) FEATURES Complimentary to MMBT2222 MARKING 2F MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-B

MMBT2907A Rev.G Aug.-2018 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features 600mA Collector currents to 600mA. / Applications General purpose amplifier. / Equivalent Circuit / Pinni

MMBT2907 / MMBT2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 60 V Collector Emitter Voltage MMBT2907 40 -VCEO V MMBT2907A 60 Emitter

MMBT2907ALTG PNP Silicon General Purpose Transistor Features Package outline Pb-Free Package May be Available. The G-Suffix Denotes a Pb-Free Lead Finish 3 Maximum Ratings 1 Rating Symbol 2907A Unit 2 Collector-Emitter Voltage VCEO -60 Vdc Collector-Base Voltage VCBO -60 Vdc SOT 23 Emitter-Base Voltage VEBO -5.0 Vdc Collector Current - Continuous IC -600 mAdc 3 COLLECTOR

SMD Type Transistors PNP Transistors MMBT2907AT (KMBT2907AT) SOT-523 U nit m m +0. 1 1.6 -0. 1 +0.1 1.0 -0.1 +0.05 0.2 -0.05 0.15 0.05 Features 2 1 Small Package Complementary to MMBT2222AT 3 0.3 0.05 +0.1 0.5-0.1 1. Base 2. Emitter 3. Collecter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Col

e s st s PNP Transistors MMBT2907A (KMBT2907A) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -60 V Emitter - Base Voltage VEBO -5 Collector

MMBT2907AW PNP GENERAL PURPOSE SWITCHING TRANSISTOR Unit inch (mm) SOT-323 POWER 225 mW VOLTAGE 60 Volts FEATURES PNP epitaxial silicon, planar design Collector-emitter voltage VCE = -60V 0.087(2.20) 0.070(1.80) Collector current IC = -600mA Lead free in compliance with EU RoHS2.0 (2011/65/EU & 2015/865/EU directive) 0.054(1.35) Green molding compound as per IEC61249 Std.

MMBT2907A PNP GENERAL PURPOSE SWITCHING TRANSISTOR 225 mW 60 Volts POWER VOLTAGE FEATURES 0.120(3.04) PNP epitaxial silicon, planar design 0.110(2.80) Collector-emitter voltage VCE = -60V Collector current IC = -600mA 0.056(1.40) 0.047(1.20) MECHANICAL DATA

MMBT2907A-AU PNP GENERAL PURPOSE SWITCHING TRANSISTOR POWER 225 mWatt VOLTAGE 60 Volt FEATURES PNP epitaxial silicon, planar design 0.120(3.04) 0.110(2.80) Collector-emitter voltage VCE = -60V Collector current IC = -600mA AEC-Q101 qualified Lead free in compliance with EU RoHS 2.0 0.056(1.40) Green molding compound as per IEC 61249 standard 0.047(1.20) 0.079(2.00) 0.008(0.20)

General Purpose Transistor MMBT2907A-G (PNP) RoHS Device Features SOT-23 -Epitaxial planar die construction -Device is designed as a general purpose 0.118(3.00) 0.110(2.80) amplifier and switching. 3 -Useful dynamic range exceeds to 600mA 0.055(1.40) 0.047(1.20) As a switch and to 100MHz as an amplifier. 1 2 0.079(2.00) 0.071(1.80) 0.006(0.15) 0.003(0.08) 0.041(1.05) 0.

General Purpose Transistor MMBT2907-G (PNP) RoHS Device SOT-23 Features -Epitaxial planar die construction 0.119 (3.00) 0.110 (2.80) -Device is designed as a general purpose 3 amplifier and switching. 0.056 (1.40) 0.047 (1.20) 1 2 0.083 (2.10) 0.006 (0.15) Collector 3 0.002 (0.05) 0.066 (1.70) 0.044 (1.10) 0.103 (2.60) 0.035 (0.90) 0.086 (2.20) 1 Base 0.006 (0.15) max

Product specification PNP General Purpose Amplifier MMBT2907A FEATURES Pb Epitaxial planar die construction. Lead-free Complementary NPN type available MMBT2222A. Ideal for medium power amplification and switching. MSL 1 APPLICATIONS This device is designed as a general purpose amplifier and switching. SOT-23 The useful dynamic range extends to 6

GSTMMBT2907A PNP General Purpose Transistor Product Description Features This device is designed as a general purpose Lead(Pb)-Free amplifier and switch. Packages & Pin Assignments GSTMMBT2907AF(SOT-23) Pin Description 1 Base 2 Emitter 3 Collector Marking Information P/N Package Part Marking GSTMMBT2907AF SOT-23 2F Ordering Information GS P/N GSTMMBT2907A F Pb Free

MMBT2907 TRANSISTOR PNP TRANSISTOR PNP TRANSISTOR PNP SOT-23 FEATURES Epitaxial planar die construction Complementary NPN Type available(MMBT2222) 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V I C Co

MMBT2907A SOT-23 Features (TO-236) PNP Silicon Epitaxial Planar Transistor For Switching and Amplifier Applications. Marking 2F The transistor is subdivided into one group according to its DC current gain 1 Base 2. Emitter 3. Collector Absolute Maximum Ratings (T =25 , unless otherwisenoted) A Parameter Symbol Value Unit Collector Base Voltage -V 60 V CBO Collector

MMBT2907A Transistors SOT-23 Plastic-Encapsulate Transistors(PNP) RHOS Features SOT-23 Epitaxial planar die construction Complementary NPN Type available(MMBT2222A) Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.) Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V 1. BASE VCEO Collector-Emitter Voltage -60 V 2. EMITTE

SMD PNP Transistor Formosa MS MMBT2907 / MMBT2907A General Purpose PNP Transistor Package outline SOT-23 Features High collector-emitterbreakdien voltage. PNP silicon epitaxial planar transistor, is designed for general purpose and amplifier applications. Capable of 225mW power dissipation. Lead-free parts meet RoHS requirments. (B) (C) Suffix "-H" indicates Ha

MMBT2907A SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( P NP ) SOT- 23 Features Epitaxial planar die construction Complementary NPN Type available(MMBT2222A) Marking 2F Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V V Collector-Emitter Voltage -60 V CEO V Emitter-Base Voltage -5 V EBO C I Collector Current -600 mA C P Collector P

MMBT2907A PNP General Purpose Amplifier FEATURES Epitaxial planar die construction. Complementary NPN type available MMBT2222A. Ideal for medium power amplification and switching. MSL 1 APPLICATIONS This device is designed as a general purpose amplifier and switching. SOT-23 The useful dynamic range extends to 600mA as a switch and to 100MHz as a

MMBT2907A SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT2907A TRANSISTOR (PNP) FEATURES Epitaxial planar die construction Complementary NPN Type available(MMBT2222A) 1. BASE 2. EMITTER Marking 2F 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V V

www.msksemi.com MMBT2907A-MS Semiconductor Compiance Semiconductor Compiance TRANSISTOR (PNP) FEATURES Epitaxial planar die construction Complementary NPN Type available(MMBT2222A- MS) 1. BASE Marking 2F 2. EMITTER SOT 23 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter

DATA SHEET MMBT2907A GENERAL PURPOSE TRANSISTOR PNP VOLTAGE -60 Volts POWER 300 mW FEATURES HIGH DC CURRENT GAIN. LOW COLLECTOR-EMITTER SATURATION VOLTAGE BOTH NORMAL AND PB-FREE PACKAGE ARE AVAILABLE. LEAD FREE AND HALOGEN-FREE MECHANICAL DATA CASE SOT-23 TERMINAL SOLDERABLE PER MIL-STD-202, METHOD 208 APPROX. WEIGHT 0.008GRAM CASE SOT-23 MAXIM

MMBT2907/MMBT2907A PNP Silicon Epitaxial Planar Transistor SOT-23 Features For switching and amplifier applications 3 The transistor is subdivided into one group according 1 to its DC current gain. 2 1.B 2.E 3.C Absolute Maximum Ratings (Ta=25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 60 V Collector Emitter Voltage MMBT2907 40 -VCEO V MMBT2907A 60

Jingdao Microelectronics co.LTD MMBT2907A MMBT2907A SOT-23 PNP TRANSISTOR 3 FEATURES Epitaxial planar die construction Complementary NPN Type available(MMBT2222A) 1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2 Symbol Parameter Value Unit 1.BASE Collector Base Voltage VCBO -60 V 2.EMITTER 3.COLLECTOR Colle

MMBT2907A SOT-23 BIPOLAR TRANSISTORS (PNP) FEATURES * Power dissipation PCM 0.3 W(Tamb=25OC) Collector current * ICM -0.6 A * Collector-base voltage V(BR)CBO -60 V SOT-23 Operating and storage junction temperature range * TJ,Tstg -55OCto+150OC COLLECTOR 3 MECHANICAL DATA 1 * Case Molded plastic BASE 0.055(1.40) * Epoxy UL 94V-O rate flame retardant 0.047(1.20) 2 * L

MMBT2907A SOT-23 PNP Transistors 3 2 1.Base 2.Emitter 1 3.Collector Simplified outline(SOT-23) Marking Marking 2F Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -60 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC 600 mA Power Dissipation PD 250

MMBT2907 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (PNP FEATURES Complimentary to MMBT2222 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage - 60 V VCEO Collector-Emitter Voltage - 60 V VEBO E

MMBT2907A AO3400 SI2305 SOT-23 Plastic-Encapsulate Transistors MMBT2907A TRANSISTOR (PNP) FEATURES Epitaxial planar die construction Complementary NPN Type available(MMBT2222A) Base 2.Emitter 3.Collector Marking 2F SOT-23 Plastic Package MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO -60 V Collector-Base Voltage VCEO Collector-Emitte

RoHS RoHS COMPLIANT COMPLIANT MMBT2907AQ PNP General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 High Conductance Part no. with suffix Q means AEC-Q101 qualified Applications Switching and linear amplification Mechanical Data SOT-23 Case Terminals Tin plated lea

RoHS RoHS COMPLIANT COMPLIANT MMBT2907A PNP General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisure Sensitivity Level 1 High Conductance Surface mount package ideally Suited for Automatic Insertion Mechanical Data Package SOT-23 Molding compound meets UL 94

MMBT2907 / MMBT2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. Base 2.Emitter 3.Collector SOT-23 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 60 V Collector Emitter Voltage MMBT2907 40 -VCE

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD MMBT2907A FEATURES PNP Switching Transistor MAXIMUM RATINGS Characteristic Symbol Unit MMBT2907 MMBT2907A Collector-Emitter Voltage V -40 -60 Vdc CEO - Collector-Base Voltage V -60 -60 Vdc CBO -

MMBT2907A PNP GENERAL PURPOSE SWITCHING TRANSISTOR 60Volts POWER 300mWatts VOLTAGE FEATURES PNP epitaxial silicon, planar design. Collector-emitter voltage VCE=-60V. Collector current IC=-0.6A. ansition frequency fT>200MHz @ IC=- Tr 20mAdc, VCE=-50Vdc, f=100MHz. In compliance with EU RoHS 2002/95/EC directives. MECHANICAL DATA Case SOT-23, Plastic 3 Terminal

A MMBT2907 BIPOLAR TRANSISTOR (PNP) FEATURES Complementary to MMBT2222 General purpose Amplifier Surface Mount device SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A Parameter Symbol Value Unit Collecto

MMBT2907A C Silicon Epitaxial Planar Transistor( PNP) E Features B Epitaxial planar die construction. SOT-23 Mark 2F Complementary NPN Type available(MMBT2222A) Absolute Maximum Ratings* T= 25 C unless otherwise noted A Symbol Parameter Value Units V Collector-Base Voltage - 60 V CBO VCEO V Collector-Emitter Voltage - 60 V Emitter-Base Voltage EBO - 5 V I Collector Curren

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction. NPN complement MMBT2222A A SOT-23 Ideal for Medium Power Amplification and C Dim Min Max Switching. A 0.37 0.51 B C Marking Code 2F B 1.20 1.40 TOP VIEW B E C D 2.30 2.50 E G D 0.89 1.03 E 0.45 0.60 H G 1.78 2.05 K H 2.80 3.00 J J 0.013 0.10 K 0.90

isc Silicon PNP Transistor MMBT2907A DESCRIPTION Low Voltage Use Ultra Super Mini Mold Package Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in low noise and small signal amplifiers from VHF band to UHF band ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -60 V CBO