MMBT3906 - описание и поиск аналогов

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT3906LT1/D General Purpose Transistor MMBT3906LT1 COLLECTOR PNP Silicon 3 Motorola Preferred Device 1 BASE 2 3 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit 2 Collector Emitter Voltage VCEO 40 Vdc CASE 318 08, STYLE 6 Collector Base Voltage VCBO 40 Vdc SOT 23 (TO 236AB) Emitter Base Vol

DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBT3906 PNP switching transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification PNP switching transistor MMBT3906 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 40 V). 1 base 2 emitter APPLICATIONS 3 collector Telephony and professional communication

MMBT3906 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA Type Marking MMBT3906 36 SILICON EPITAXIAL PLANAR PNP TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS MMBT3904 APPLICATIONS SOT-23 WELL SUITABLE FOR PORTABLE EQUIPMENT SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SATURATION VOLTA

2N3906 MMBT3906 PZT3906 C C E E C C TO-92 B B B E SOT-223 SOT-23 Mark 2A PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents of 10 A to 100 mA. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage -40 V VCBO Collector-Base Vol

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

MMBT3906 40V PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Epitaxial Planar Die Construction Case SOT23 Ideal for Medium Power Amplification and Switching Case Material Molded Plastic, Green Molding Compound Complementary NPN Type MMBT3904 UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes 1 &

SMBT3906...MMBT3906 PNP Silicon Switching Transistors High DC current gain 0.1 mA to 100 mA Low collector-emitter saturation voltage For SMBT3906S and SMBT3906U Two (galvanic) internal isolated transistor with good matching in one package Complementary types SMBT3904...MMBT3904 (NPN) SMBT3906S/ U for orientation in reel see package information below P

SMBT3906/ MMBT3906 PNP Silicon Switching Transistor 3 High DC current gain 0.1 mA to 100 mA Low collector-emitter saturation voltage Complementary type 2 SMBT3904/ MMBT3904 (NPN) 1 VPS05161 Type Marking Pin Configuration Package SMBT3906/ MMBT3906 s2A SOT23 1 = B 2 = E 3 = C Maximum Ratings Parameter Symbol Value Unit 40 V Collector-emitter voltage VCEO 40 Coll

SMBT3906...MMBT3906 PNP Silicon Switching Transistors High DC current gain 0.1 mA to 100 mA Low collector-emitter saturation voltage For SMBT3906S and SMBT3906U Two (galvanic) internal isolated transistor with good matching in one package Complementary types SMBT3904...MMBT3904 (NPN) SMBT3906S/ U for orientation in reel see package information below P

MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components MMBT3906 CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating PNP General Moisure Sensitivity Level 1 Capable of 300mWatts

M C C TM onents Micro Commercial Components 20736Marilla Street Chatsworth MMBT3906 Halogen free available upon request by adding suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating PNP GeneraI Moisure Sensitivity Level 1 Purp se AmpIifier Marking 2A Maximum Ra

2N3906 / MMBT3906 / PZT3906 PNP General-Purpose Amplifier Description This device is designed for general-purpose amplifier and switching applications at collector currents of 10 mA to 100 mA. 2N3906 PZT3906 MMBT3906 C C E E C B TO-92 SOT-23 SOT-223 B Mark 2A EBC Ordering Information Part Number Marking Package Packing Method Pack Quantity 2N3906BU 2N3906 TO-92 3L Bulk 10000

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

UNISONIC TECHNOLOGIES CO., LTD MMBT3906 PNP SILICON TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES * Collector-Emitter Voltage VCEO=40V * Collector Dissipation PD(MAX)=350mW * Complementary to UTC MMBT3904 ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3 MMBT3906G-AE3-R SOT-23 E B C Tape Reel MMBT3906G-AL3-R SOT-323 E B C Tape Reel MMB

MMBT3906 -200 mA, -40 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES SOT-23 Collector current capability IC=-200mA Collector-emitter voltage VCEO=-40V. APPLICATION A L General switching and amplification. 3 3 Top View C B PACKAGING DIMENSION 1 1 2

MMBT3906 Taiwan Semiconductor 350mW, PNP Small Signal Transistor FEATURES KEY PARAMETERS Low power loss, high efficiency PARAMETER VALUE UNIT Ideal for automated placement VCBO -40 V High surge current capability VCEO -40 V Moisture sensitivity level level 1, per J-STD-020 VEBO -5 V RoHS Compliant Halogen-free according to IEC 61249-2-21 I

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT3906 TRANSISTOR (PNP) SOT 23 FEATURES As complementary type, the NPN transistor MMBT3904 is Recommended Epitaxial planar die construction 1. BASE MARKING 2A 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Co

Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM3906 MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO -40 Vdc -

MMBT3906 SOT-23 Transistor(PNP) 1. BASE 2. EMITTER SOT-23 3. COLLECTOR Features As complementary type, the NPN transistor MMBT3904 is Recommended Epitaxial planar die construction MARKING 2A MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO -40 V Collector-Base Voltage VCEO -40 V Collector-Em

MMBT3906 COLLECTOR 3 General Purpose Transistor 3 PNP Silicon 1 1 BASE 2 P b Lead(Pb)-Free SOT-23 2 EMITTER Maximum Ratings Rating Symbol Value Unit Collector-Emitter Voltage V -40 Vdc CEO Collector-Base Voltage VCBO -40 Vdc Emitter-Base VOltage VEBO -5.0 Vdc Collector Current-Continuous IC mAdc -200 Thermal Characteristics Characteristics Symbol Max Unit (1) Total Dev

PNP PNPEPITAXIAL SILICON TRANSISTOR R MMBT3906 MAIN CHARACTERISTICS Package I 100mA C V 40V CEO P (SOT-23) 200mW C APPLICATIONS High frequency switching power supply High frequency power transform Commonly power amplifier circuit

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors MMBT3906 TRANSISTOR (PNP) FEATURES Complimentary to MMBT3904 MARKING 2A MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-B

MMBT3906 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features h V FE CE(sat) High DC Current Gain, Low Collector to Emitter Saturation Voltage. / Applications General purpose amplifier and switching.

MMBT3906 PNP Silicon General Purpose Transistor for switching and amplifier applications. As complementary types the NPN transistors MMBT3904 is recommended. TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 40 V Emitter Base Voltage -VEBO 6 V Collector Current -IC 200 mA

SMD Type Transistors PNP Transistors MMBT3906 (KMBT3906) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features 1 2 Complementary to MMBT3904 +0.1 +0.05 0.95-0.1 0.1 -0.01 +0.1 1.9 -0.1 Marking 2A 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Collector - Emitter Voltage VCEO -40 V

MMBT3906 PNP GENERAL PURPOSE SWITCHING TRANSISTOR 40 Volt POWER 330 mWatt VOLTAGE FEATURES 0.120(3.04) 0.110(2.80) PNP epitaxial silicon, planar design Collector-emitter voltage VCE = -40V Collector current IC = -200mA Lead free in compliance with EU RoHS 2.0 0.056(1.40) 0.047(1.20) Green molding compound as per IEC 61249 standard 0.079(2.00) 0.008(0.20) 0.07

MMBT3906 PNP Switching Transistor MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage V -40 Vdc CEO Collector-Base Voltage V -40 Vdc CBO V -6.0 Vdc Emitter-Base Voltage EBO Collector Current-Continuous Ic -200 mAdc THERMAL CHARACTERISTICS THERMAL CHARACTERISTICS THERMAL CHARACTERISTICS THERMAL CHARAC

MMBT3906 Transistors SOT-23 Plastic-Encapsulate Transistors(PNP) RHOS Features SOT-23 As complementary type the NPN transistor MMBT3904 is recommended Epitaxial planar die construction Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V 1. BASE VCEO Collector-Emitter Vol

SOT-23 Plastic-Encapsulate Transistors Formosa MS TRANSISTOR (PNP) MMBT3906 FEATURES Pb Epitaxial planar die construction. Lead-free Complementary NPN type available (MMBT3904). Low Current (Max -100mA). Low Voltage(Max -40v). APPLICATIONS Ideal for medium power amplification and switching SOT-23 ORDERING INFORMATION Type No. Marking Package Code MMBT3906

MMBT3906 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( P NP ) Features SOT- 23 As complementary type, the NPN transistor MMBT3904 is Recommended Epitaxial planar die construction Marking 2A Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V V Collector-Emitter Voltage -40 V CEO C V Emitter-Base Voltage -5 V EBO I Collector Current -200 m

MMBT3906 NP General Purpose Transistor FEATURES Epitaxial planar die construction. Complementary NPN type available (MMBT3904). Collector Current Capability ICM =-200mA. Low Voltage(Max -40V). APPLICATIONS Ideal for medium power amplification and switching. SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS Value UNIT

MMBT3906 TRANSISTOR(PNP) FEATURES SOT-23 ecommended Complementary Type The NPN Transistor MMBT3904 is R Epitaxial Planar Die Construction (3)C 1. BASE MARKING 2A 2. EMITTER 2 A 3. COLLECTOR (1)B (2)E MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Em

DATA SHEET MMBT3906 PNP GENERAL PURPOSE TRANSISTORS VOLTAGE -40 V CURRENT -200 mA FEATURES HIGH DC CURRENT GAIN LOW COLLECTOR-EMITTER SATURATION VOLTAGE LEAD FREE AND HALOGEN-FREE MECHANICAL DATA CASE SOT-23 TERMINALS SOLDERABLE PER MIL-STD-202, METHOD 208 APPROX. WEIGHT 0.008 GRAMS CASE SOT-23 ABSOLUTE MAXIMUM RATINGS AT TA=25 C, UNLESS OTHERWISE

MMBT3906 PNP Transistor Features SOT-23 For Switching and AF Amplifer Applications. (TO-236) Silicon Epitaxial Chip. 1.Base 2.Emitter 3.Collector Marking 3E Absolute Maximum Ratings (T = 25 ) A Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 40 V Emitter Base Voltage -VEBO 6 V Collector Current -I 200 mA C Powe

MMBT3906 SOT-23 PNP Transistors 3 2 1.Base 2.Emitter 1 3.Collector Features Simplified outline(SOT-23) Complementary to MMBT3904 Marking 2A Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Collector - Emitter Voltage VCEO -40 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -0.2 A Collector Power D

MMBT3906 SOT-23 Plastic-Encapsulate Transistors MMBT3906 TRANSISTOR (PNP) FEATURES Complimentary to MMBT3904 MARKING 2A MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage - -40 V VCEO Collector-Emitter Voltage -

MMBT3904 MMBT3906 AO3400 SI2305 MMBT3906 TRANSISTOR PNP FEATURES Complementary Type The NPN Transistor MMBT3904 is Recommended SOT-23 Epitaxial Planar Die Construction 1 BASE 2 EMITTER MARKING 2A 3 COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit Collector-Base Voltage VCBO -40 V VCEO Collector-Emitter Voltage -40 V

RoHS COMPLIANT MMBT3906 PNP General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Moisure Sensitivity Level 1 Marking 2A Maximum Rating, (Ta=25 Unless otherwise specified) Item Symbol Unit Value Collector-Emitter Voltage V V -40 CEO Collector-Base Voltage V V -40 CBO Emitter-Base Voltage V V -5.0 EBO Collector Current, Continuous

MMBT3906 MMBT3906 SOT-23 Plastic-Encapsulate Transistors(PNP) General description SOT-23 Plastic-Encapsulate Transistors(NPN) FEATURES Complementary to MMBT3904 Power Dissipation of 200mW High Stability and High Reliability SOT-23 Small Outline Plastic Package Epoxy UL 94V-0 DEVICE MARKING CODE Device Type Device Marking MMBT3906 2A . Maximum Ra

MMBT3906 TRANSISTOR PNP FEATURES Complementary Type The NPN Transistor SOT-23 MMBT3904 is Recommended Epitaxial Planar Die Construction 1 BASE 2 EMITTER 3 COLLECTOR MARKING 2A MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit Collector-Base Voltage VCBO -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V I

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD MMBT3906 MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO -40 Vdc - Collector-Base Voltage VCBO -40 Vdc - Emitter-Base Voltage VEBO -6.0 Vdc -

MMBT3906 PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE -40Volts POWER 225mWatts FEATURES PNP epitaxial silicon, planar design. Collector-emitter voltage VCE=-40V. Collector current IC=0.2A. In compliance with ER RoHS 2002/95/EC directives. MECHANICAL DATA Case SOT-23, Plastic 3 Terminals Solderable per MIL-STD-750, C method 2026 2A Approx. Weight 0.008gra

MMBT3906 BIPOLAR TRANSISTOR (PNP) FEATURES Complementary to MMBT3904 Surface Mount device MECHANICAL DATA SOT-23 Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A Parameter Symbol Value Unit Collector-Base Voltage V -40 V CBO Colle

PNP MMBT3906 MMBT3906 TRANSISTOR PNP FEATURES Complementary Type The NPN Transistor SOT-23 MMBT3904 is Recommended Epitaxial Planar Die Construction 1 BASE 2 EMITTER 3 COLLECTOR MARKING 2A MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit Collector-Base Voltage VCBO -40 V VCE

MMBT3906 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES As complementary type, the NPN transistor MMBT3904 is Recommended SOT 23 Epitaxial planar die construction MARKING 2A MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V 1. BASE VCEO Collector-Emitter Voltage -40 V 2. EM

isc Silicon PNP Power Transistors MMBT3906 DESCRIPTION Collector-Emitter Saturation Voltage- V = -0.25V(Max.)@I = -10mA CE(sat) C Collector-Emitter Breakdown Voltage- V = -40V(Min) (BR) CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers,lamp drivers,motor drivers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA MMBT3904WT1/D General Purpose Transistors NPN NPN and PNP Silicon MMBT3904WT1 PNP These transistors are designed for general purpose amplifier applications. They are housed in the SOT 323/SC 70 which is designed for low power surface mount MMBT3906WT1 applications. MAXIMUM RATINGS Rating Symbol Value Unit GENERAL PURPO

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA MMBT3904WT1/D General Purpose Transistors NPN NPN and PNP Silicon MMBT3904WT1 PNP These transistors are designed for general purpose amplifier applications. They are housed in the SOT 323/SC 70 which is designed for low power surface mount MMBT3906WT1 applications. MAXIMUM RATINGS Rating Symbol Value Unit GENERAL PURPO

February 2008 MMBT3906T PNP Epitaxial Silicon Transistor Features C General purpose amplifier transistor. E Ultra-Small Surface Mount Package for all types. B Suitable for general switching & amplification Marking A06 Well suited for portable application SOT-523F As complementary type, NPN MMBT3904T is recommended Absolute Maximum Ratings Ta = 25 C unless o

MMBT3906K PNP Epitaxial Silicon Transistor General Purpose Transistor Marking 3 2AK 2 SOT-23 1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -200 mA PC Collector Power Dissipation 350

August 2012 MMBT3906SL PNP Epitaxial Silicon Transistor Features General purpose amplifier transistor Ultra small surface mount package for all types (max 0.43mm tall) Suitable for general switching & amplification Well suited for portable application As complementary type, NPN MMBT3904SL is recommended. Pb free COLLECTOR 3 C 1 BASE E B 2 Marking AB

MMBT3906T 40V PNP SMALL SIGNAL TRANSISTOR IN SOT523 Features Mechanical Data BVCEO > -40V Case SOT523 Case Material Molded Plastic. Green Molding Compound. IC = -200mA Collector Current UL Flammability Rating 94V-0 Epitaxial Planar Die Construction Moisture Sensitivity Level 1 per J-STD-020 Ultra-Small Surface Mount Package Termin

MMBT3906FZ 40V PNP SMALL SIGNAL TRANSISTOR IN DFN0606 Features Mechanical Data BVCEO > -40V Case X2-DFN0606-3 IC = -200mA High Collector Current Case Material Molded Plastic, Green Molding Compound. PD = 925mW Power Dissipation UL Flammability Classification Rating 94V-0 0.36mm2 Package Footprint, 40% Smaller than DFN1006 Moisture Sensitivity Lev

MMBT3906T PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-523 Complementary NPN Type Available (MMBT3904T) C Dim Min Max Typ Lead Free/RoHS Compliant (Note 2) "Green" Device (Note 3 and 4) A 0.15 0.30 0.22 B C TOP VIEW B 0.75 0.85 0.80 Mechanical Data B E C 1.45 1.75 1.60 G Case SOT-523 D 0.50

MMBT3906LP 40V PNP SMALL SIGNAL TRANSISTOR IN DFN1006 Features Mechanical Data BVCEO > -40V Case X1-DFN1006-3 IC = -200mA High Collector Current Case Material Molded Plastic, "Green" Molding Compound. PD = 1000mW Power Dissipation UL Flammability Classification Rating 94V-0 0.60mm2 Package Footprint, 13 times Smaller than SOT23 Moisture Sensitivity Lev

MMBT3906FA 40V PNP SMALL SIGNAL TRANSISTOR IN DFN0806 Features Mechanical Data BVCEO > -40V Case X2-DFN0806-3 IC = -200mA high Collector Current Case Material Molded Plastic, Green Molding Compound. PD = 435mW Power Dissipation UL Flammability Classification Rating 94V-0 0.48mm2 package footprint, 16 times smaller than SOT23 Moisture Sensitivity

MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components MMBT3906T CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) PNP General Surface Mount SOT-523 Package Epitaxial Planar Die Construction Purpose Transistor Epoxy

MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components MMBT3906T CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) PNP General Surface Mount SOT-523 Package Epitaxial Planar Die Construction Purpose Transistor Epoxy

MMBT3906HE3 Features Halogen Free. "Green" Device (Note 1) AEC-Q101 Qualified Moisture Sensitivity Level 1 PNP Epoxy Meets UL 94 V-0 Flammability Rating General Purpose Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Amplifier Maximum Ratings SOT-23 Operating Junction Temperature Range -55 to +150

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

MMBT3906TT1 General Purpose Transistors PNP Silicon This transistor is designed for general purpose amplifier www.onsemi.com applications. It is housed in the SOT-416/SC-75 package which is designed for low power surface mount applications. GENERAL PURPOSE AMPLIFIER TRANSISTORS Features NSVM Prefix for Automotive and Other Applications Requiring SURFACE MOUNT Unique Site and Co

MMBT3906LT1G General Purpose Transistor PNP Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO -40 Vdc 2 Collector-Base Voltage VCBO -40 Vdc EMITTER Emitter-Base Voltage VEBO -5.0 Vdc Collector Current - Continuous IC -200 mAdc

MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP General Purpose www.onsemi.com Transistors NPN and PNP Silicon COLLECTOR 3 These transistors are designed for general purpose amplifier applications. They are housed in the SOT-323/SC-70 package which 1 is designed for low power surface mount applications. BASE Features 2 S Prefix for Automotive an

MMBT3904WT1, NPN MMBT3906WT1, PNP General Purpose Transistors NPN and PNP Silicon http //onsemi.com These transistors are designed for general purpose amplifier COLLECTOR applications. They are housed in the SOT-323/SC-70 package which 3 is designed for low power surface mount applications. Features 1 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS BASE Complian

MMBT3904WT1, NPN, SMMBT3904WT1, NPN, MMBT3906WT1, PNP General Purpose Transistors http //onsemi.com NPN and PNP Silicon COLLECTOR These transistors are designed for general purpose amplifier 3 applications. They are housed in the SOT-323/SC-70 package which is designed for low power surface mount applications. 1 BASE Features AEC-Q101 Qualified and PPAP Capable 2 S Pref

MMBT3906TT1 General Purpose Transistors PNP Silicon This transistor is designed for general purpose amplifier http //onsemi.com applications. It is housed in the SOT-416/SC-75 package which is designed for low power surface mount applications. GENERAL PURPOSE AMPLIFIER TRANSISTORS Features SURFACE MOUNT Pb-Free Package is Available COLLECTOR 3 MAXIMUM RATINGS (TA = 25 C) Ra

MMBT3906L, SMMBT3906L General Purpose Transistor PNP Silicon Features S Prefix for Automotive and Other Applications Requiring Unique http //onsemi.com Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable COLLECTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 3 Compliant 1 BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit EMITTER Coll

MMBT3906L, SMMBT3906L General Purpose Transistor PNP Silicon Features AEC-Q101 Qualified and PPAP Capable http //onsemi.com S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements COLLECTOR 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit EMITTER

MMBT3906EF PNP Silicon Transistor Descriptions PIN Connection Small signal application Switching application 3 Features 1 Low collector saturation voltage Low collector output capacitance 2 Complementary pair with MMBT3904EF SOT-523F Ordering Information Type NO. Marking Package Code Y MMBT3906EF SOT-523F Device Code

MMBT3906T PNP Silicon General Purpose Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-523 FEATURES Simplifies Circuit Design. We Declare that the material of product compliance with RoHS requirements. ORDERING INFORMATION Device Marking Shipping MMBT3906T 2A 3000/Tape&Reel Millimeter Millimete

MMBT3906W PNP Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product FEATURES A suffix of "-C" specifies halogen & lead-free SOT-323(SC-70) Epitaxial Planar Die Construction Dim Min Max Complementary NPN Type Available (MMBT3904W) A 1.800 2.200 Ideal for Medium Power Amplification and B 1.150 1.350 A Switching L C 0.800 1.000 "Lead free is availab

MMBT3906FW PNP Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product FEATURES SOT-523 Epitaxial Planar Die Construction A Dim Min Max Complementary NPN Type Available L (MMBT3904FW) A 1.500 1.700 Ideal for Medium Power Amplification and B 0.750 0.850 S Switching Top View B C 0.700 0.900 D 0.250 0.350 COLLECTOR V G G 0.900 1.100 3 3 H 0.00

MMBT3906Z -200 mA, -40 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES SOT-923 Collector current capability IC= -200mA Collector-emitter voltage VCEO= -40V. APPLICATION General switching and amplification. (Top View) MARKING Date code 3 PACKAGING DIMENSION Mi

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Transistors SOT-523 MMBT3906T TRANSISTOR (PNP) FEATURES Epitaxial Planar Die Construction Complementary NPN Type Available 1. BASE Also Available in Lead Free Version 2. EMITTER MARKING 3N 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-723 Plastic-Encapsulate Transistors MMBT3906M TRANSISTOR (PNP) SOT-723 FEATURE 3 3 Complementary to MMBT3904M Small Package 1 MARKING 3N 2 MAXIMUM RATINGS (Ta=25 unless otherwise noted ) 1. BASE 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -

www.jscj-elec.com AD-MMBT3906 series JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. AD-MMBT3906 series Plastic-Encapsulated Transistor AD-MMBT3906 series Transistor (PNP) FEATURES Complementary to AD-MMBT3904 series AEC-Q101 qualified MARKING 2A = Device code 2A X X = Date code Version 1.0 1 / 6 2021-07-01 www.jscj-elec.com AD-MMBT3906 series MAXIM

Zowie Technology Corporation General Purpose Transistor PNP Silicon Lead free product Halogen-free type COLLECTOR 3 3 BASE 1 1 MMBT3906WGH 2 2 SOT-323 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO -40 Vdc Collector-Base Voltage VCBO -40 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current-Continuous IC -200 mAdc THERMAL CHARACTERISTICS

Zowie Technology Corporation General Purpose Transistor PNP Silicon COLLECTOR 3 3 BASE 1 1 MMBT3906WG 2 2 SOT-323 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO -40 Vdc Collector-Base Voltage VCBO -40 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current-Continuous IC -200 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max. Unit o T

MMBT3906T SOT-523 Transistor (PNP) 1. BASE SOT-523 2. EMITTER 3. COLLECTOR Features Epitaxial Planar Die Construction Complementary NPN Type Available Also Available in Lead Free Version MARKING 3N Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO -40 V Collector-Base Voltage VCEO -40 V Co

MMBT3906LT1 PNP General Purpose Transistor 1. BASE 2. EMITTER 3. COLLECTOR FEATURES A SOT-23 Epitaxial planar die construction. Dim Min Max A 2.70 3.10 E Complementary NPN type available B 1.10 1.50 K B C 1.0 Typical (MMBT3904). D 0.4 Typical E 0.35 0.48 J Collector Current Capability ICM =-200mA. D G 1.80 2.00 G H 0.02 0.1 Low Voltage(Max -40V). J 0.1 Typi

MMBT3906T COLLECTOR 3 General Purpose Transistor 3 PNP Silicon 1 1 2 BASE P b Lead(Pb)-Free 2 SC-89 EMITTER (SOT-523F) Maximum Ratings Rating Symbol Value Unit Collector-Emitter Voltage V -40 V CEO Collector-Base Voltage VCBO -40 V Emitter-Base Voltage VEBO -5.0 V Collector Current-Continuous IC mA -200 Thermal Characteristics Characteristics Symbol Max Unit (1) Total

MMBT3906E PNP General Purpose Transistor 3 2 1 1 The MMBT3906E device is a spin-off of our popular SOT-23/SOT-323/SOT-563/SOT-963 three-leaded device. SOT-1123 It is designed for general purpose amplifier applications and is housed in the SOT-1123 surface mount package. COLLECTOR This device is ideal for low-power surface mount applications 3 where board space is at a premium. FE

MMBT3906W COLLECTOR 3 General Purpose Transistor 3 PNP Silicon 1 BASE 1 2 2 EMITTER SOT-323(SC-70) M aximum R atings Rating Symbol Value Unit Collector-Emitter Voltage V -40 Vdc CEO Collector-Base Voltage VCBO -40 Vdc Emitter-Base VOltage VEBO -5.0 Vdc Collector Current-Continuous IC mAdc -200 Thermal Characteristics Characteristics Symbol Max Unit Total Device Dissipati

FM120-M WILLAS THRU MMBT3906TT1 General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to optimize

FM120-M WILLAS MMBT3906DW1T1 THRU Dual Bias Resistor Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to optimi

FM120-M WILLAS THRU MMBT3906LT1 General Purpose BARRIER RECTIFIERS -20V- 200V Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H PNP Silicon Low profile surface mounted application in order to

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors MMBT3906LT1 TRANSISTOR ( PNP) FEATURES As complementary type, the NPN transistor MMBT3904LT1 is Recommended Epitaxial planar die construction MARKING 2A MAXIMUM RATINGS* TA=25 unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collecto

MMBT3906LTG General Purpose Transistors Package outline Features We declare that the material of product compliance with RoHS requirements. 3 Ordering Information 1 Device Marking Shipping 2 MMBT3906LTG 2A 3000/Tape & Reel SOT 23 Maximum Ratings 3 Rating Symbol Value Unit COLLECTOR Collector-Emitter Voltage VCEO -40 Vdc 1 Collector-Base Voltage VCBO -40 Vdc BASE Emitt

SMD Type Transistors PNP Transistors MMBT3906T (KMBT3906T) SOT-523 U nit m m +0. 1 1.6 -0. 1 +0.1 1.0 -0.1 +0.05 0.2 -0.05 0.15 0.05 Features Epitaxial Planar Die Construction 2 1 Also Available in Lead Free Version Complementary to MMBT3904T 3 0.3 0.05 +0.1 0.5-0.1 1. Base 2. Emitter 3. Collecter Absolute Maximum Ratings Ta = 25 Parameter S

SMD Type Transistors PNP Transistors MMBT3906DW (KMBT3906DW) Features Epitaxial planar die construction Ideal for low power amplification and switching Dual PNP Transistors Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Collector - Emitter Voltage VCEO -40 V Emitter - Base Voltage VEBO -5 Collector Curren

SMD Type Transistors PNP Transistors (KMBT3906-D) MMBT3906-D SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features 1 2 Complementary to MMBT3904-D +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 Marking 2A 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Collector - Emitter Voltage

SMD Type Transistors PNP Transistors MMBT3906W Features Collector Current Capability IC=-0.2A Collector Emitter Voltage VCEO=-40V Complementary to MMBT3904W 1 Base 2 Emitter 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Collector - Emitter Voltage VCEO -40 V Emitter - Base Voltage VEBO -5 Col

General Purpose Transistor MMBT3906-G (PNP) RoHS Device Features SOT-23 -Epitaxial planar die construction 0.119 (3.00) 0.110 (2.80) -As complementary type, the NPN 3 0.056 (1.40) transistor MMBT3904-G is recommended 0.047 (1.20) 1 2 Collector 0.079 (2.00) 0.006 (0.15) 3 0.003 (0.08) 0.071 (1.80) 0.041 (1.05) 0.100 (2.55) 0.035 (0.90) 0.089 (2.25) 1 Base 0.004 (0.10) m

General Purpose Transistor MMBT3906-HF (PNP) RoHS Device Halogen Free Features SOT-23 -Epitaxial planar die construction 0.119 (3.00) 0.110 (2.80) -As complementary type, the NPN 3 transistor MMBT3906-HF is recommended 0.056 (1.40) 0.047 (1.20) 1 2 0.079 (2.00) 0.006 (0.15) Collector 0.003 (0.08) 0.071 (1.80) 3 0.041 (1.05) 0.100 (2.55) 0.035 (0.90) 0.089 (2.25) 1 Base

GSTMMBT3906 PNP General Purpose Transistor Product Description Features This device is designed as a general purpose Lead(Pb)-Free amplifier and switch. Packages & Pin Assignments GSTMMBT3906F(SOT-23) Pin Description 1 Base 2 Emitter 3 Collector Marking Information P/N Package Part Marking GSTMMBT3906F SOT-23 2A Ordering Information GS P/N GSTMMBT3906 F Pb Free

MMBT3906T Plastic-Encapsulate Transistors TRANSISTOR (PNP) SOT-523 FEATURES Epitaxial Planar Die Construction Complementary NPN Type Available Also Available in Lead Free Version 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO -40 V Collector-Base Voltage VCEO -40 V Collector-Emitter Voltage VEB

www.msksemi.com MMBT3906T-MS Semiconductor Compiance Semiconductor Compiance TRANSISTOR (PNP) 3 MMBT3906T-MS FEATURES 1. BASE Epitaxial Planar Die Construction 2. EMITTER Complementary NPN Type Available 3. COLLECTOR 1 Also Available in Lead Free Version 2 MARKING 3N SOT-523 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO -40 V C

www.msksemi.com MMBT3906-MS Semiconductor Compiance Semiconductor Compiance TRANSISTOR (PNP) FEATURES As complementary type, the NPN transistor MMBT3904-MS is Recommended Epitaxial planar die construction 1. BASE 2. EMITTER MARKING 2A SOT 23 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V

Jingdao Microelectronics co.LTD MMBT3906 MMBT3906 SOT-23 PNP TRANSISTOR 3 FEATURES As complementary type, the NPN transistor MMBT3904 is Recommended Epitaxial planar die construction 1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2 Symbol Parameter Value Unit 1.BASE Collector Base Voltage VCBO -40 V 2.EMIT

MMBT3906T sulate Transistors PNP Plastic-Encap FEATURES Epitaxial Planar Die Construction Complementary NPN Type Available Also Available in Lead Free Version MARKING 2A SOT-523 1. BASE 2. EMITTER 3. COLLECTOR =25 unless otherwise noted) MAXIMUM RATINGS (T a Symbol Parameter Value Units VCBO -40 V Collector-Base Voltage VCEO -40 V Collector-Emitter Voltage V

Integrated in OVP&OCP products provider MMBT3906 SOT-23 Plastic-Encapsulate Transistors SOT-23 Features MMBT3904 ; Complementary to MMBT3904 200mW; Power Dissipation of 200mW High Stability and High Reliability Mechanical Data SOT-23 SOT-23 Small Outline Plastic Package

MMBT3906 TRANSISTOR(PNP) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features MMBT3904 ; Complementary to MMBT3904 200mW; Power Dissipation of 200mW High Stability and High Reliability Mechanical Data SOT-23 SOT-23 Small Outline Plastic Pack

MMBT3906T MMBT3906T MMBT3906T MMBT3906T TRANSISTOR(PNP) MMBT39 0 6T SOT 523 FEATURES Epitaxial Planar Die Construction 1. BASE Complementary NPN Type Available 2. EMITTER Also Available in Lead Free Version 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO -40 V Collector-Base Voltage VCEO -40 V Collector-Emitter Volta

MMBT3906M MMBT3906M MMBT3906M MMBT3906M TRANSISTOR (PNP) SOT-723 3 3 FEATURE Complementary to MMBT3904M Small Package 1 2 1. BASE MARKING 3N 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted ) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current

MMBT3906W MMBT3906W MMBT3906W MMBT3906W MMBT39 0 6W TRANSISTOR(PNP) for switching and amplifier applications SOT 323 3 1. BASE 1 2. EMITTER 2 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 40 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 200 mA Total Po

RoHS COMPLIANT MMBT3906T PNP General Purpose Amplifier Features Moisture Sensitivity Level 1 Surface mount package ideally Suited for Automatic Insertion Epoxy meets UL-94 V-0 flammability rating, halogen-free Mechanical Data ackage SOT-523 P Terminals Tin plated leads, solderable per J-STD-002 and JESD22-B102 Marking 3N Maximum R

MMBT3906T MMBT3906T SOT-523 Silicon General Purpose Transistor (PNP) General description SOT-523 Silicon General Purpose Transistor (PNP) FEATURES Simplifies Circuit Design RoHS Compliant Green EMC Matte Tin(Sn) Lead Finish Weight approx. 0.002g Absolute Maximum Ratings (TA = 25 C unless otherwise noted) Symbol Parameter Value Units VCBO Collector

MMBT3906M MMBT3906M PNP General Purpose Transistor General description PNP General Purpose Transistor FEATURES SOT-723 General Purpose Transistors. VCEO -40V Ic -200mA PC 100mW Complementary to MMBT3904M Small Outline Surface Mount Package. RoHS Compliant / Green EMC. Type MMBT3904M Marking 3N Absolute Maximum Ratings(Ta=25 ) Pa

MMBT3906W MMBT3906W SOT-323 Silicon General Purpose Transistor (PNP) General description SOT-323 Silicon General Purpose Transistor (PNP) FEATURES Simplifies Circuit Design RoHS Compliant Green EMC Matte Tin(Sn) Lead Finish Weight approx. 0.001g Absolute Maximum Ratings (TA = 25 C unless otherwise noted) Parameter Symbol Value Unit Collector Base

SOT-523 Plastic-Encapsulate Transistors SOT-523 MMBT3906T TRANSISTOR (PNP) FEATURES Epitaxial Planar Die Construction Complementary NPN Type Available 1. BASE Also Available in Lead Free Version 2. EMITTER MARKING 3N 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO -40 V Collector-Base Voltage VCEO -40 V Collector

MMBT3906W PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications Marking Code 3N O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 40 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 200 mA Total Power Dissipation Ptot 200 mW O Junction Temperature Tj 150 C O

YFSEMI ELECTRON SOT-23 Plastic-Encapsulate Transistors MMBT3906 TRANSISTOR (PNP) SOT 23 FEATURES As complementary type, the NPN transistor MMBT3904 is Recommended Epitaxial planar die construction 1. BASE MARKING 2A 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -