Справочник транзисторов. MMBT4143

 

Биполярный транзистор MMBT4143 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: MMBT4143
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.3 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 0.5 A
   Предельная температура PN-перехода (Tj): 125 °C
   Граничная частота коэффициента передачи тока (ft): 200 MHz
   Ёмкость коллекторного перехода (Cc): 8 pf
   Статический коэффициент передачи тока (hfe): 100
   Корпус транзистора: TO236

 Аналоги (замена) для MMBT4143

 

 

MMBT4143 Datasheet (PDF)

 7.1. Size:1839K  eicsemi
mmbt4140.pdf

MMBT4143
MMBT4143

TH09/2479TH97/2478 IATF 0113686SGS TH07/1033www.eicsemi.comMMBT4140 NPN Silicon General Purpose Transistor SOT-23 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 40 VCollector Emitter Voltage VCEO 30 VEmitter Base Voltage VEBO 5 VCollector Current (DC) IC 1 APeak Collector Current ICM 2 APeak Base Current

 8.1. Size:95K  fairchild semi
2n4124 mmbt4124.pdf

MMBT4143
MMBT4143

2N4124 MMBT4124CETO-92CB BSOT-23EMark: ZCNPN General Purpose AmplifierThis device is designed as a general purpose amplifier and switch.The useful dynamic range extends to 100 mA as a switch and to100 MHz as an amplifier.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 25 VVCBO Collector-Base Vo

 8.2. Size:81K  fairchild semi
2n4126 mmbt4126.pdf

MMBT4143
MMBT4143

2N4126 MMBT4126CEC TO-92B BSOT-23EMark: ZFPNP General Purpose AmplifierThis device is designed for general purpose amplifier and switch-ing applications at collector currents to 10 A as a switch and to100 mA as an amplifier.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 25 VVCBO Collector-Base

 8.3. Size:339K  diodes
mmbt4126.pdf

MMBT4143
MMBT4143

MMBT4126 25V PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Epitaxial Planar Die Construction Case: SOT23 Ideal for Medium Power Amplification and Switching Case Material: Molded plastic, Green Molding Compound; Complementary NPN Type: MMBT4124 UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes 1 &

 8.4. Size:324K  diodes
mmbt4124.pdf

MMBT4143
MMBT4143

MMBT4124 25V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > 25V Case: SOT23 IC = 200mA High Collector Current Case Material: Molded Plastic, Green Molding Compound; Complementary PNP Type: MMBT4126 UL Flammability Classification Rating 94V-0 Ideal for Medium Power Amplification and Switching Moisture Sensitivity: Level 1 per J

 8.5. Size:154K  onsemi
mmbt4126lt1.pdf

MMBT4143
MMBT4143

MMBT4126LT1GGeneral Purpose TransistorPNP SiliconFeatureshttp://onsemi.com Moisture Sensitivity Level: 1 ESD Rating: - Human Body Model: > 4000 V- Machine Model: > 400 V COLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGS2Rating Symbol Value Unit EMITTERCollector-Emitter Voltage VCEO -25 VdcCollector-Ba

 8.6. Size:183K  onsemi
mmbt4126lt1g.pdf

MMBT4143
MMBT4143

MMBT4126LT1GGeneral Purpose TransistorPNP SiliconFeatures Moisture Sensitivity Level: 1 www.onsemi.com ESD Rating: - Human Body Model: > 4000 V- Machine Model: > 400 VCOLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGS2Rating Symbol Value Unit EMITTERCollector-Emitter Voltage VCEO -25 VdcCollector-Base

 8.7. Size:144K  onsemi
mmbt4124lt1.pdf

MMBT4143
MMBT4143

MMBT4124LT1GGeneral Purpose TransistorNPN SiliconFeatureshttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantCOLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit 1BASECollector-Emitter Voltage VCEO 25 VdcCollector-Base Voltage VCBO 30 Vdc2Emitter-Base Voltage VEBO 5.0 VdcEMITTERCollector Current - Continuous IC 200 mAdcTHER

 8.8. Size:148K  onsemi
mmbt4124lt1g.pdf

MMBT4143
MMBT4143

MMBT4124LT1GGeneral Purpose TransistorNPN SiliconFeatureswww.onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantCOLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit 1BASECollector-Emitter Voltage VCEO 25 VdcCollector-Base Voltage VCBO 30 Vdc2Emitter-Base Voltage VEBO 5.0 VdcEMITTERCollector Current - Continuous IC 200 mAdcTHERMAL

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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