Справочник транзисторов. MMBT4403LT1

 

Биполярный транзистор MMBT4403LT1 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: MMBT4403LT1
   Маркировка: 2T
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.31 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 0.6 A
   Предельная температура PN-перехода (Tj): 135 °C
   Граничная частота коэффициента передачи тока (ft): 200 MHz
   Ёмкость коллекторного перехода (Cc): 9 pf
   Статический коэффициент передачи тока (hfe): 100
   Корпус транзистора: TO236

 Аналоги (замена) для MMBT4403LT1

 

 

MMBT4403LT1 Datasheet (PDF)

 ..1. Size:151K  onsemi
mmbt4403lt1.pdf

MMBT4403LT1 MMBT4403LT1

MMBT4403LT1GSwitching TransistorPNP SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.comhttp://onsemi.comCompliantCOLLECTOR3MAXIMUM RATINGS1Rating Symbol Value UnitBASECollector-Emitter Voltage VCEO -40 VdcCollector-Base Voltage VCBO -40 Vdc2EMITTEREmitter-Base Voltage VEBO -5.0 VdcCollector Current - Continuous I

 ..2. Size:431K  willas
mmbt4403lt1.pdf

MMBT4403LT1 MMBT4403LT1

FM120-M WILLASMMBT4403LT1THRUGeneral Purpose TransistorsFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offersPNP Silicon better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order t

 0.1. Size:149K  onsemi
mmbt4403lt1g.pdf

MMBT4403LT1 MMBT4403LT1

MMBT4403L, SMMBT4403LSwitching TransistorPNP SiliconFeatures S Prefix for Automotive and Other Applications Requiring Uniquehttp://onsemi.comhttp://onsemi.comSite and Control Change Requirements; AEC-Q101 Qualified andPPAP CapableCOLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGS2Rating Symbol Value Unit

 4.1. Size:149K  onsemi
mmbt4403lt3g.pdf

MMBT4403LT1 MMBT4403LT1

MMBT4403L, SMMBT4403LSwitching TransistorPNP SiliconFeatures S Prefix for Automotive and Other Applications Requiring Uniquehttp://onsemi.comhttp://onsemi.comSite and Control Change Requirements; AEC-Q101 Qualified andPPAP CapableCOLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGS2Rating Symbol Value Unit

 5.1. Size:162K  onsemi
mmbt4403l smmbt4403l.pdf

MMBT4403LT1 MMBT4403LT1

MMBT4403L, SMMBT4403LSwitching TransistorPNP SiliconFeatures S Prefix for Automotive and Other Applications Requiring Uniquewww.onsemi.comSite and Control Change Requirements; AEC-Q101 Qualified andPPAP CapableCOLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERCollector-Em

 5.2. Size:1650K  cn yongyutai
mmbt4403l mmbt4403h.pdf

MMBT4403LT1 MMBT4403LT1

MMBT4403 TRANSI STOR (PNP)MARKING: Equivalent Circuit:SOT-231.BASE2.EMITTER3.COLLECTORFEATURES: Complimentary to MMBT4401 Collector Current: Ic=0.6A Switching TransistorMAXIMUM RATINGS (Ta=25 unless otherwise noted)Parameter Symbol Value UnitVCBOCollector-Base Voltage -40 VVCEOCollector-Emitter Voltage -40 VVEBOEmitter-Base Voltage -5 VICColle

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