2N4410 - описание и поиск аналогов

Discrete POWER & Signal Technologies 2N4410 C TO-92 B E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 50 mA. Sourced from Process 16. See 2N5551 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 80 V V

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N4410/D Amplifier Transistor NPN Silicon 2N4410 COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS CASE 29 04, STYLE 1 Rating Symbol Value Unit TO 92 (TO 226AA) Collector Emitter Voltage VCEO 80 Vdc Collector Base Voltage VCBO 120 Vdc Emitter Base Voltage VEBO 5.0 Vdc Collector Current Continuou

2N4416/2N4416A/SST4416 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) 2N4416 -v6 -30 4.5 5 2N4416A -2.5 to -6 -35 4.5 5 SST4416 -v6 -30 4.5 5 FEATURES BENEFITS APPLICATIONS D Excellent High-Frequency Gain D Wideband High Gain D High-Frequency Amplifier/Mixer 2N4416/A, Gps 13 dB (typ) @ D Very High System Sensitiv

TM 2N4416 Central 2N4416A Semiconductor Corp. N-CHANNEL JFET DESCRIPTION The CENTRAL SEMICONDUCTOR 2N4416 and 2N4416A are silicon N-Channel Junction Field Effect Transistors designed for VHF amplifier and mixer applications. MARKING CODE Full Part Nmber JEDEC TO-72 CASE MAXIMUM RATINGS (TA=25 C) SYMBOL 2N4416 2N4416A UNITS Gate-Drain Voltage VGD 30 35 V Gate-Source Voltage

2N4416A 2N4416A SMALL SIGNAL N CHANNEL J FET THAT IS DESIGNED TO PROVIDE HIGH MECHANICAL DATA PERFORMANCE AMPLIFICATION AT Dimensions in mm (inches) HIGH FREQUENCIES 4.95 (0.195) 4.52 (0.178) 4.95 (0.195) 4.52 (0.178) FEATURES EXCELLENT HIGH FREQUENCY GAINS 0.48 (0.019) 0.41 (0.016) CECC SCREENING OPTIONS dia. SPACE QUALITY LEVEL OPTIONS 2.54 (0.100) Nom.

SILICON SMALL SIGNAL N-CHANNEL JFET 2N4416AC1 Low Noise, High Gain. Hermetic Surface Mounted Package. Designed For VHF/UHF Amplifiers, Oscillators And Mixers. Screening Options Available. ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VDS Drain Source Voltage 35V VGS Gate Source Voltage -35V VGD Gate Drain Voltage -35V IG

2N4416DCSM SEME LAB SMALL SIGNAL DUAL N CHANNEL J FET IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm (inches) FEATURES 1.40 0.15 2.29 0.20 1.65 0.13 (0.055 0.006) (0.09 0.008) (0.065 0.005) HERMETIC CERAMIC SURFACE MOUNT PACKAGE 2 3 CECC SCREENING OPTIONS 1 4 A SPACE

2N4416CSMA 2N4416ACSM SMALL SIGNAL N CHANNEL J FET IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE MECHANICAL DATA Dimensions in mm (inches) FOR HIGH RELIABILITY APPLICATIONS 0.51 0.10 (0.02 0.004) 0.31 rad. (0.012) FEATURES 3 HERMETIC CERAMIC SURFACE MOUNT PACKAGE (SOT23 COMPATIBLE) 21 CECC SCREENING OPTIONS 1.91 0.10 SPACE QUALITY LEVEL OPT

N-Channel JFET High Frequency Amplifier CORPORATION 2N4416 / 2N4416A / PN4416 FEATURES ABSOLUTE MAXIMUM RATINGS (T = 25oC unless otherwise noted) A Low Noise Low Feedback Capacitance Gate-Source or Gate-Drain Voltage Low Output Capacitance 2N4416, PN4416 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -30V High Transconductance 2N4416A . . . .