2N4410 Datasheet and Replacement

Discrete POWER & SignalTechnologies2N4410C TO-92BENPN General Purpose AmplifierThis device is designed for use as general purpose amplifiersand switches requiring collector currents to 50 mA. Sourcedfrom Process 16. See 2N5551 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 80 VV

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N4410/DAmplifier TransistorNPN Silicon2N4410COLLECTOR32BASE1EMITTER123MAXIMUM RATINGSCASE 2904, STYLE 1Rating Symbol Value UnitTO92 (TO226AA)CollectorEmitter Voltage VCEO 80 VdcCollectorBase Voltage VCBO 120 VdcEmitterBase Voltage VEBO 5.0 VdcCollector Current Continuou

2N4416/2N4416A/SST4416Vishay SiliconixN-Channel JFETsPRODUCT SUMMARYPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)2N4416 -v6 -30 4.5 52N4416A -2.5 to -6 -35 4.5 5SST4416 -v6 -30 4.5 5FEATURES BENEFITS APPLICATIONSD Excellent High-Frequency Gain: D Wideband High Gain D High-Frequency Amplifier/Mixer2N4416/A, Gps 13 dB (typ) @D Very High System Sensitiv

TM2N4416Central2N4416ASemiconductor Corp.N-CHANNEL JFETDESCRIPTION:The CENTRAL SEMICONDUCTOR 2N4416 and2N4416A are silicon N-Channel Junction FieldEffect Transistors designed for VHF amplifier andmixer applications.MARKING CODE:Full Part NmberJEDEC TO-72 CASEMAXIMUM RATINGS: (TA=25C)SYMBOL 2N4416 2N4416A UNITSGate-Drain Voltage VGD 30 35 VGate-Source Voltage

2N4416A2N4416ASMALL SIGNAL NCHANNEL JFET THAT ISDESIGNED TO PROVIDE HIGHMECHANICAL DATAPERFORMANCE AMPLIFICATION ATDimensions in mm (inches)HIGH FREQUENCIES4.95 (0.195)4.52 (0.178)4.95 (0.195)4.52 (0.178)FEATURES EXCELLENT HIGH FREQUENCY GAINS0.48 (0.019)0.41 (0.016) CECC SCREENING OPTIONSdia. SPACE QUALITY LEVEL OPTIONS2.54 (0.100)Nom.

SILICON SMALL SIGNAL N-CHANNEL JFET 2N4416AC1 Low Noise, High Gain. Hermetic Surface Mounted Package. Designed For VHF/UHF Amplifiers, Oscillators And Mixers. Screening Options Available. ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VDS Drain Source Voltage 35V VGS Gate Source Voltage -35V VGD Gate Drain Voltage -35V IG

2N4416DCSMSEMELABSMALL SIGNAL DUALNCHANNEL JFET IN AHERMETICALLY SEALEDCERAMIC SURFACE MOUNT PACKAGEFOR HIGH RELIABILITY APPLICATIONSMECHANICAL DATADimensions in mm (inches)FEATURES1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005) HERMETIC CERAMIC SURFACE MOUNTPACKAGE2 3 CECC SCREENING OPTIONS1 4A SPACE

2N4416CSMA2N4416ACSMSMALL SIGNAL NCHANNEL JFET IN AHERMETICALLY SEALEDCERAMIC SURFACE MOUNT PACKAGEMECHANICAL DATADimensions in mm (inches)FOR HIGH RELIABILITY APPLICATIONS0.51 0.10(0.02 0.004) 0.31rad.(0.012)FEATURES3 HERMETIC CERAMIC SURFACE MOUNTPACKAGE (SOT23 COMPATIBLE)21 CECC SCREENING OPTIONS1.91 0.10 SPACE QUALITY LEVEL OPT

N-Channel JFETHigh Frequency AmplifierCORPORATION2N4416 / 2N4416A / PN4416FEATURES ABSOLUTE MAXIMUM RATINGS(T = 25oC unless otherwise noted)A Low Noise Low Feedback Capacitance Gate-Source or Gate-Drain Voltage Low Output Capacitance 2N4416, PN4416 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -30V High Transconductance 2N4416A . . . .