Биполярный транзистор MMBT5855 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: MMBT5855
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.75 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 1 A
Предельная температура PN-перехода (Tj): 125 °C
Граничная частота коэффициента передачи тока (ft): 15 MHz
Ёмкость коллекторного перехода (Cc): 100 pf
Статический коэффициент передачи тока (hfe): 50
Корпус транзистора: TO236
MMBT5855 Datasheet (PDF)
nsvmmbt589lt1g.pdf
MMBT589LT1G,NSVMMBT589LT1GHigh Current Surface MountPNP Silicon SwitchingTransistor for Loadhttp://onsemi.comManagement in Portable Applications30 VOLTS, 2.0 AMPSPNP TRANSISTORSFeatures AEC-Q101 Qualified and PPAP Capable NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change RequirementsSOT-23 (TO-236) These Devices are P
mmbt589lt1g nsvmmbt589lt1g.pdf
MMBT589LT1G,NSVMMBT589LT1GHigh Current Surface MountPNP Silicon SwitchingTransistor for Loadwww.onsemi.comManagement in Portable Applications30 VOLTS, 2.0 AMPSPNP TRANSISTORSFeatures NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BF
mmbt589lt1g.pdf
MMBT589LT1G,NSVMMBT589LT1GHigh Current Surface MountPNP Silicon SwitchingTransistor for Loadhttp://onsemi.comManagement in Portable Applications30 VOLTS, 2.0 AMPSPNP TRANSISTORSFeatures AEC-Q101 Qualified and PPAP Capable NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change RequirementsSOT-23 (TO-236) These Devices are P
mmbt589lt1.pdf
MMBT589LT1GHigh Current Surface MountPNP Silicon SwitchingTransistor for LoadManagement in http://onsemi.comPortable Applications30 VOLTS, 2.0 AMPSFeaturesPNP TRANSISTORS These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantCOLLECTOR3MAXIMUM RATINGS (TA = 25C)1Rating Symbol Value UnitBASECollector-Emitter Voltage VCEO -30 VdcCollector-
mmbt589.pdf
MMBT589PNP SiliconElektronische BauelementeGeneral Purpose TransistorRoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeFEATURESSOT-23A2 Dim Min MaxLEmitter3A 2.800 3.0403B 1.200 1.400Top View SB1121 BaseC 0.890 1.1102D 0.370 0.500V GG 1.780 2.040Collector 3H 0.013 0.100CJ 0.085 0.177HJD K K 0.450 0
mmbt589.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT589 TRANSISTOR (PNP) FEATURES High current surface mount PNP silicon switching transistor for 1. BASE Load management in portable applications 2. EMITTER 3. COLLECTOR MARKING :589 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVC
mmbt589.pdf
MMBT58 9TRANSISTOR(PNP)SOT-23 FEATURES High current surface mount PNP silicon switching transistor for Load management in portable applications 1. BASE 2. EMITTER MARKING :589 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5
mmbt589 sot-23.pdf
MMBT589 SOT-23 Transistor(PNP)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features High current surface mount PNP silicon switching transistor for Load management in portable applications MARKING :589 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collector-Base Voltage -50 V VCEO Collector-Emitte
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Список транзисторов
Обновления
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