MMBT5855 Datasheet, Equivalent, Cross Reference Search
Type Designator: MMBT5855
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.75 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 15 MHz
Collector Capacitance (Cc): 100 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO236
MMBT5855 Transistor Equivalent Substitute - Cross-Reference Search
MMBT5855 Datasheet (PDF)
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mmbt589lt1g nsvmmbt589lt1g.pdf
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mmbt589lt1g.pdf
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mmbt589lt1.pdf
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mmbt589.pdf
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mmbt589.pdf
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mmbt589.pdf
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mmbt589 sot-23.pdf
MMBT589 SOT-23 Transistor(PNP)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features High current surface mount PNP silicon switching transistor for Load management in portable applications MARKING :589 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collector-Base Voltage -50 V VCEO Collector-Emitte
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
