MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBTA05LT1/DMMBTA05LT1Driver TransistorsMMBTA06LT1*NPN SiliconCOLLECTOR*Motorola Preferred Device31BASE32EMITTE

March 2011MPSA06 / MMBTA06 / PZTA06NPN General Purpose AmplifierFeatures This device is designed for general purpose amplifier applications at collector currents to 300mA. Sourced from Process 33.MPSA06 MMBTA06 PZTA06CCEECBTO-92 SOT-23 SOT-223BMark:1GEBCAbsolute Maximum Ratings * Ta = 25C unless otherwise noted Symbol Parameter Value UnitsVCEO Colle

MPSA06 MMBTA06 PZTA06CCEECBC TO-92BSOT-23BSOT-223EMark: 1GNPN General Purpose AmplifierThis device is designed for general purpose amplifier applicationsat collector currents to 300 mA. Sourced from Process 33.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 80 VVCBO Collector-Base Volta

MMBTA05 / MMBTA06NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Epitaxial Planar Die Construction Case: SOT23 Ideal for Low Power Amplification and Switching Case Material: Molded Plastic, Green Molding Compound UL Flammability Classification Rating 94V-0 Complementary PNP Type: MMBTA55 & MMBTA56 Totally Lead-Free & Fully RoHS compliant

SMBTA06/MMBTA06NPN Silicon AF Transistor Low collector-emitter saturation voltage23 Complementary type: 1 SMBTA 56 / MMBTA56 (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101Type Marking Pin Configuration PackageSMBTA06/MMBTA06 s1G SOT231=B 2=E 3=CMaximum RatingsParameter Symbol Value Unit80 VCollector-emitter voltage VCEO80Colle

M C CMMBTA05TMMicro Commercial ComponentsMicro Commercial Components THRU20736 Marilla Street ChatsworthCA 91311MMBTA06Phone: (818) 701-4933Fax: (818) 701-4939Features Halogen free available upon request by adding suffix "-HF" Epitaxial Planar Die Construction NPN Small Signal Complementary PNP Types Available (MMBTA55/MMBTA56)General Purpose Ideal

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

UNISONIC TECHNOLOGIES CO., LTD MMBTA06 NPN SILICON TRANSISTOR AMPLIFIER TRANSISTOR FEATURES 3* Collector-Emitter Voltage: VCEO=80V * Collector Dissipation: PD=350mW 12SOT-23(JEDEC TO-236) ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3MMBTA06G-AE3-R SOT-23 E B C Tape Reel Note: Pin Assignment: E: Emitter B: Base C: Collector

MMBTA06 0.5A , 80V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-23 High Voltage Application A Telephone Application L Complementary to MMBTA56 33Top ViewC B11 2MARKING 2K E1GM DH JF GPACKAGE INFORMATION Package MPQ Leader Size Mi

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA06 TRANSISTOR (NPN) SOT23 FEATURES For Switching and Amplifier Applications Complementary Type PNP Transistor MMBTA56 MARKING: 1GM 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR V Collector-Base Volta

SEMICONDUCTOR MMBTA06TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORDRIVER STAGE AMPLIFIER APPLICATIONS.VOLTAGE AMPLIFIER APPLICATIONS.EL B LFEATUREDIM MILLIMETERS_+A 2.93 0.20Complementary to MMBTA56.B 1.30+0.20/-0.15C 1.30 MAXSuffix U : Qualified to AEC-Q101.23 D 0.40+0.15/-0.05ex) MMBTA06-RTK/HUE 2.40+0.30/-0.20G 1.901H 0.95J 0.13+0.10/-0.05K

MMBTA06TRANSISTOR(NPN)FEATURES For Switching and Amplifier Applications Complementary Type PNP Transistor MMBTA56 MARKING: 1GM MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit SOT23 V Collector-Base Voltage 80 V CBOV Collector-Emitter Voltage 80 V CEOV Emitter-Base Voltage 4 V EBOI Collector Current 500 mA CP Collector P

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GMA06MAXIMUM RATINGS (Ta=25 )MAXIMUM RATINGS (Ta=25)MAXIMUM RATINGS (Ta=25 )Characteristic Symbol Rating Unit Collector-Base voltageVCBO 80 Vdc

MMBTA05/MMBTA06 NPN General Purpose TransistorSOT-23Features Epitaxial planar die construction. Complementary PNP type available (MMBTA55/MMBTA56). Also available in lead free version. ApplicationsDimensions in inches and (millimeters) Ideal for medium power amplification and switching Ordering Information Type No. Marking Package Code MMBTA05 1H SOT-23 M

MMBTA06 Rev.FApr.-2017 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features MMBTA56 Complementary to MMBTA56. / Applications Ideal for medium power amplification and switching. / Equivalent Circuit

SEMICONDUCTORMMBTA05/06TECHNICAL DATADriver TransistorsFEATURESWe declare that the material of productcompliance with RoHS requirements.DEVICE MARKINGMMB = 1H , MMBTA06 = 1GMTA0532MAXIMUM RATINGS1ValueRating Symbol MMBTA05 MMBTA06 UnitSOT23CollectorEmitter Voltage V 60 80 VdcCEOCollectorBase Voltage V 60 80 VdcCBOEmitterBase Voltage V 4

SMD Type TransistorsNPN TransistorsMMBTA06 (KMBTA06)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features For Switching and Amplifier Applications Complementary to MMBTA561 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Col

PMMBTA05 / MMBTA06 / MMBTA55 / MMBTA56 NPN AND PNP HIGH VOLTAGE TRANSISTOR SOT-23 Unit: inch(mm) 60~80V 225mW Voltage Power Features NPN and PNP silicon, planar design Collector current IC = 500mA Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard Mechanical Data Case: SOT-23 Package Terminals: Solderable

RUMW UMW MMBTA06SOT-23 Plastic-Encapsulate TransistorsMMBTA06 TRANSISTOR (NPN) SOT-23 FEATURES For Switching and Amplifier Applications 1. BASE Complementary Type PNP Transistor MMBTA56 2. EMITTER MARKING: 1GM 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 80 V CBOV Collector-Emitter V

SOT-23 Plastic-Encapsulate TransistorsFormosa MSMMBTA06 TRANSISTOR (NPN) FEATURES For Switching and Amplifier Applications Complementary Type PNP Transistor MMBTA56 SOT23 MARKING: 1GM MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 80 V CBO1. BASE V Collector-Emitter Voltage 80 V CEO2. EMITTER V Em

MMBTA06 TRANSISTOR(NPN) SOT-23 SOT-23 Plastic-Encapsulate Transistors SOT-23 Features For Switching and Amplifier Applications MMBTA56 ; Complementary to MMBTA56 300mW; Power Dissipation of 300mW High Stability and High Reliability Me

RoHS RoHSCOMPLIANT COMPLIANTMMBTA05 THRU MMBTA06 NPN General Purpose Amplifier transistors Features Epoxy meets UL-94 V-0 flammability ratingHalogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 High Conductance Surface Mount Package Ideally Suited for Automatic Insertion Mechanical Data Package: SOT-23 Moldi

MMBTA06WT1GDriver TransistorNPN SiliconMoisture Sensitivity Level: 1ESD Rating: Human Body Model -- 4 kVESD Rating: Machine Model -- 400 Vhttp://onsemi.comFeaturesCOLLECTOR3 These Devices are Pb--Free, Halogen Free/BFR Free and are RoHSCompliant1BASE2MAXIMUM RATINGSEMITTERRating Symbol Value Unit3Collector -- Emitter Voltage VCEO 80 VdcCollector -- Bas

MMBTA05L, MMBTA06LDriver TransistorsNPN SiliconFeatures S and NSV Prefix for Automotive and Other Applications Requiringwww.onsemi.comUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP CapableCOLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERCollector

MMBTA05LT1G,MMBTA06LT1GDriver TransistorsNPN Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant 31MAXIMUM RATINGSBASERating Symbol Value Unit2Collector-Emitter Voltage VCEO VdcEMITTERMMBTA05LT1 60MMBTA06LT1 803Collector-Base Voltage VCBO VdcMMBTA05LT1 601MMBTA06LT1 802Emitter-Base Vo

MMBTA05L, MMBTA06L,SMMBTA06LDriver TransistorsNPN Siliconhttp://onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueCOLLECTORSite and Control Change Requirements; AEC-Q101 Qualified and3PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1CompliantBASE2EMITTERMAXIMUM RATINGSRating Symbol Value Unit3

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

MMBTA06WT1G,SMMBTA06WT1G,Driver TransistorNPN SiliconMoisture Sensitivity Level: 1http://onsemi.comESD Rating: Human Body Model - 4 kVESD Rating: Machine Model - 400 VFeatures AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring UniqueSC-70Site and Control Change RequirementsCASE 419 These Devices are Pb-Free, Halogen

MMBTA05L, MMBTA06L,SMMBTA06LDriver TransistorsNPN Siliconhttp://onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueCOLLECTORSite and Control Change Requirements; AEC-Q101 Qualified and3PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1CompliantBASE2EMITTERMAXIMUM RATINGSRating Symbol Value Unit3

SEMICONDUCTORMMBTA05/06TECHNICAL DATADriver TransistorsFEATURESWe declare that the material of product3compliance with RoHS requirements.2MAXIMUM RATINGS1ValueRating Symbol MMBTA05 MMBTA06 UnitSOT23CollectorEmitter Voltage V 60 80 VdcCEOCollectorBase Voltage V 60 80 VdcCBOEmitterBase Voltage V 4.0 VdcEBOCollector Current Continuous I

PMMBTA05-AU / MMBTA06-AU / MMBTA55-AU / MMBTA56-AU NPN AND PNP HIGH VOLTAGE TRANSISTOR SOT-23 Unit: inch(mm) 60~80V 225mW Voltage Power Features NPN and PNP silicon, planar design Collector current IC = 500mA AEC-Q101 qualified Lead free in compliance with EU RoHS2.0 (2011/65/EU & 2015/865/EU directive) Green molding compound as per IEC61249 Std.. (

PMMBTA06W NPN High Voltage Transistor 80V 225mW Voltage Power Features NPN silicon, planar design Collector current IC = 500mA Lead free in compliance with EU RoHS 2011/65/EU directive. Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data Case: SOT-323 Package Terminals: Solderable per MIL-STD-750, Method 2026 Appr

MMBTA05W/MMBTA06W GENERAL PURPOSE TRANSISTORS NPN Silicon FEATURES NPN SILICON EPITAXIAL PLANAR TRANSISTOR FORSWITCHING AND AMPLIFIER APPLICATIONS COLLECTOR CURRENT IC = 500 mA PB FREE PRODUCT ARE AVAILABLE :98.5% SN ABOVE CAN MEET ROHSENVIRONMENT SUBSTANCE DIRECTIVE REQUEST MECHANICAL DATA CASESOT-323 TERMINALSSOLDERABLE PER MIL-STD-202G, MET

RoHS RoHSCOMPLIANT COMPLIANTMMBTA06Q NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 High Conductance Part no. with suffix Q means AEC-Q101 qualified Applications NPN General Purpose Amplifier Mechanical Data Case: SOT-23 Terminals: Tin plated leads, solde