DISCRETE SEMICONDUCTORSDATA SHEETMMBTA92PNP high-voltage transistorProduct specification 2004 Jan 16Supersedes data of 2000 Apr 11Philips Semiconductors Product specificationPNP high-voltage transistor MMBTA92FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION High voltage (max. 300 V).1 base2 emitterAPPLICATIONS3 collector Telephony Professi

DISCRETE SEMICONDUCTORSDATA SHEETk, halfpageM3D088MMBTA92PNP high-voltage transistorProduct specification 2000 Apr 11Philips Semiconductors Product specificationPNP high-voltage transistor MMBTA92FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION High voltage (max. 300 V).1 base2 emitterAPPLICATIONS3 collector Telephony Professional commun

MMBTA92Small signal PNP transistorFeatures Miniature SOT-23 plastic package for surface mounting circuits Tape and reel packaging The NPN complementary type is MMBTA42Applications Video amplifier circuits (rgb cathode current control)SOT-23 Telephone wireline interface (hook switches, dialer circuits)Description Figure 1. Intenal schematic diagramThe d

MPSA92 MMBTA92 PZTA92CCEECBC TO-92BSOT-23BSOT-223EMark: 2DPNP High Voltage AmplifierThis device is designed for high voltage driver applications.Sourced from Process 76.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 300 VVCBO Collector-Base Voltage 300 VVEBO Emitter-Base Voltage 5.0

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

MMBTA92 300V PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > 300V Case: SOT-23 Ideal for Medium Power Amplification and Switching Case Material: Molded Plastic, Green Molding Compound; Complementary NPN Type: MMBTA42 UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Moisture Sens

MMBTA92 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database.Features Epitaxial Planar Die Construction A SOT-23 Complementary NPN Types Available (MMBTA42) CDim Min Max Ideal for Medium Power Amplification and Switching A 0.37 0.51 B C Lead, Halogen and Antimony Free, RoHS Compliant B 1.20 1.40 "Green"

SMBTA92/MMBTA92PNP Silicon High-Voltage Transistors Suitable for video output stages in TV sets23 and switching power supplies1 High breakdown voltage Low collector-emitter saturation voltage Complementary types: SMBTA42 / MMBT42 (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101Type Marking Pin Configuration PackageSMBTA92/MMBTA92

MCCMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial ComponentsMMBTA92CA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Surface Mount SOT-23 PackagePNP Silicon High Capable of 300mWatts of Power Dissipation Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)Voltage Transistor

MMBTA92L, SMMBTA92L,MMBTA93LHigh Voltage TransistorsPNP Siliconhttp://onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueCOLLECTORSite and Control Change Requirements; AEC-Q101 Qualified and3PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1CompliantBASEMAXIMUM RATINGS2Rating Symbol 92 93 UnitEMITT

UNISONIC TECHNOLOGIES CO., LTD MMBTA92 PNP SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR 3 DESCRIPTION The UTC MMBTA92 are high voltage PNP transistors, designed 1for telephone signal switching and for high voltage amplifier. 2SOT-23 FEATURES (JEDEC TO-236)* High Collector-Emitter voltage: VCEO= -300V * Collector Dissipation: PC(MAX)=350mW ORDERING INFOR

MMBTA92PNP SiliconElektronische Bauelemente General Purpose TransistorRoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeSOT-23FEATURESDim Min MaxPb-free is available.A 2.800 3.040Power dissipation & Collector currentB 1.200 1.400 Pcm: 0.3W Icm: -0.3AHigh voltage V(BR): -300V C 0.890 1.110AD 0.370 0.500LG 1.780 2.0403H 0.013 0.100COLLECTO

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBTA92 TRANSISTOR (PNP) 1. BASE FEATURES 2. EMITTER 3. COLLECTOR High voltage transistor MARKING:2D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Bas

SEMICONDUCTOR MMBTA92/93TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH VOLTAGE APPLICATION. TELEPHONE APPLICATION.EL B LFEATURESDIM MILLIMETERSComplementary to MMBTA42/43._+2.93 0.20AB 1.30+0.20/-0.15C 1.30 MAX23 D 0.45+0.15/-0.05E 2.40+0.30/-0.20MAXIMUM RATING (Ta=25 )1G 1.90H 0.95CHARACTERISTIC SYMBOL RATING UNITJ 0.13+0.10/-0.05K 0.00 ~ 0.1

MMBTA92TRANSISTOR(PNP)SOT-23 FEATURES 1. BASE 2. EMITTER High voltage transistor 3. COLLECTOR MARKING:2D MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -300 mA PC Collector Power Dissipation 300 m

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GMA92 GMA93MAXIMUM RATINGSMAXIMUM RATINGS MAXIMUM RATINGSCharacteristic Symbol UnitGMA92 GMA93 Collector-Emitter VoltageVCEO -300 -200 Vdc-

MMBTA92 SOT-23 Transistor(PNP)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features High voltage transistor MARKING:2D Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous

MMBTA92COLLECTORHigh-Voltage PNP Transistor33Surface Mount112BASEP b Lead(Pb)-Free2SOT-23EMITTERMaximum RatingsRating Symbol Value UnitCollector-E m itter Voltage V -3 0 0 VdcCE OCollector-B as e Voltage VCB O -3 0 0 VdcE m itter-B as e VOltage VE B O -5 . 0 VdcCollector Current-Continuous ICmAdc-5 0 0Thermal CharacteristicsCharacteristics Symbol

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors MMBTA92 TRANSISTOR (NPN) FEATURES High breakdown voltage Complementary to MMBTA42 MARKING:2D MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units

MMBTA92 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features ,,, MMBTA42 High voltage, low saturation voltage, low collector output capacitance, complementary pair with MMBTA42. / Applications

MMBTA92 / MMBTA93 PNP Silicon High Voltage Transistors for high voltage switching and amplifier applications. TO-236 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage MMBTA92300 V -VCBO MMBTA93200 Collector Emitter Voltage MMBTA92 300 V -VCEO MMBTA93 200 5 VEmitter Base Voltage -VEBO 500 mACollector Cur

SEMICONDUCTORMMBTA92/93TECHNICAL DATAHigh Voltage TransistorPNP SiliconFEATUREHigh voltage.For Telephony or Professional communication equipment applications.We declare that the material of product compliance with RoHS requirements. 32DEVICE MARKING AND ORDERING INFORMATION1Device Marking ShippingSOT23 MMBTA92LT1G 2D 3000/Tape&Reel MMBTA92LT3G2D 10000/Tape&Ree

SMD Type TransistorsPNP Transistors MMBTA92 (KMBTA92)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.1 Features3 High voltage transistor Low collector-emitter saturation voltage Complementary to MMBTA42 (NPN)1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit

MMBTA92 TRANSISTOR PNPTRANSISTOR PNP FEATURES SOT-23 High voltage transistor 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -200 mA ICM Collector Current -Pulsed -50

RUMW UMW MMBTA92SOT-23 Plastic-Encapsulate TransistorsSOT-23 MMBTA92 TRANSISTOR (PNP) FEATURES 1. BASE 2. EMITTER High voltage transistor 3. COLLECTOR MARKING:2D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collector Curre

MMBTA92FEATURES High Collector Current SOT-23 Complementary to MMBTA42MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -300 V CBOV Collector-Emitter Voltage CEO -300 V V Emitter-Base Voltage -5 V EBOIC Collector Current -0.2 A P Collector Power Dissipation 300 mW CR Thermal Resistance From Junction To

MMBTA9 2SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( P NP )Features SOT- 23High voltage transistor Marking: 2DSymbol Parameter Value Unit VCBO Collector-Base Voltage -300 V V Collector-Emitter Voltage -300 V CEOCV Emitter-Base Voltage -5 V EBOI Collector Current C-200mA ICM Collector Current - Pulsed -500 mA P Collector Power Dissipation

MMBTA92PNP High Voltage AmplifierFEATURES Epitaxial planar die construction. Complementary NPN type available (MMBTA42). Ideal for medium power amplification and switching. APPLICATIONS High voltage driver applications. SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specifiedSymbol Parameter Value UNITV collector-base voltage -300 VCBOV collector-

MMBTA92SOT-23 Plastic-Encapsulate TransistorMMBTA92 TRANSISTOR (PNP)SOT-23 FEATURES High voltage transistorMarking: 2D (3)C 1. BASE2D2. EMITTER3. COLLECTOR(1)B (2)E MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitV VCBO Collector-Base Voltage -300VCEO Collector-Emitter Voltage V -300VEBO Emitter-Base Voltage -5 V IC Co

Jingdao Microelectronics co.LTD MMBTA92 MMBTA92SOT-23PNP TRANSISTOR3FEATURES High Voltage Transistor1MAXIMUM RATINGS (Ta=25 unless otherwise noted)Symbol 2Parameter Value Unit VCBO V 1.BASECollectorBase Voltage -3002.EMITTERVCEO VCollectorEmitter Voltage -3003.COLLECTOR VEBO VEmitterBase V

MMBTA92SOT-23 Plastic-Encapsulate Transistors MMBTA92 TRANSISTOR (PNP) SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR High voltage transistor MARKING:2D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continu

MMBTA92 TRANSISTOR (PNP)SOT-23 Plastic-Encapsulate Transistors SOT-23 FEATURES High voltage transistor 1BASE 2EMITTER 3COLLECTOR MARKING:2DMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -200 m

MMBTA92 SOT-23 PNP Transistors32 1.Base Features2.Emitter1 3.Collector High voltage transistor Low collector-emitter saturation voltage Simplified outline(SOT-23) Complementary to MMBTA42 (NPN) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -300 Collector - Emitter Voltage VCEO -300 V Emitter

RoHS RoHSCOMPLIANT COMPLIANTMMBTA92 PNP Silicon High Voltage Transistor Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 Surface mount package ideally Suited for Automatic Insertion PNP Mechanical Data ackage: SOT-23 P Terminals: Tin plated leads, s

SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBTA92 TRANSISTOR (PNP) 1. BASE FEATURES 2. EMITTER 3. COLLECTOR High voltage transistor MARKING:2D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -200

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTDMMBTA92/MMBTA93 MAXIMUM RATINGS Characteristic Symbol Unit(MMBTA92) (MMBTA93) Collector-Emitter VoltageVCEO -300 -200 Vdc-Collector-Base VoltageVCBO -300 -200 Vdc-Emitter-Base VoltageVEBO -6.0 -6.0 Vdc

MMBTA92PNP GENERAL PURPOSE SWITCHING TRANSISTORVOLTAGE -300Volts POWER 300mWattsFEATURESPNP epitaxial silicon, planar design. Collector-emitter voltage VCE=-300V.Collector current IC=-0.3A.ansition frequency fT>200MHz @ IC=-Tr20mAdc, VCE=-50Vdc, f=100MHz.In compliance with ER RoHS 2002/95/EC directives.MECHANICAL DATACase: SOT-23, Plastic3Terminal

MMBTA92BIPOLAR TRANSISTOR (PNP)FEATURES Complementary to MMBTA42 High breakdown voltage Low Collector-emitter saturation voltage Surface Mount deviceSOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise noted)A

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBTA92LT1/DHigh Voltage Transistors*MMBTA92LT1COLLECTORPNP Silicon3MMBTA93LT1*Motorola Preferred Device1BASE2EMITTER3MAXIMUM RATINGS1Rating Symbol MMBTA92 MMBTA93 Unit2CollectorEmitter Voltage VCEO 300 200 VdcCollectorBase Voltage VCBO 300 200 VdcCASE 31808, STYLE 6SOT

SMBTA92/MMBTA92PNP Silicon High-Voltage Transistors Suitable for video output stages in TV sets23 and switching power supplies1 High breakdown voltage Low collector-emitter saturation voltage Complementary types: SMBTA92 / MMBT92 (NPN) Pb-free (RoHS compliant) package1) Qualified according AEC Q101Type Marking Pin Configuration PackageSMBTA92/MMBTA

MMBTA92L, SMMBTA92L,MMBTA93LHigh Voltage TransistorsPNP Siliconhttp://onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueCOLLECTORSite and Control Change Requirements; AEC-Q101 Qualified and3PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1CompliantBASEMAXIMUM RATINGS2Rating Symbol 92 93 UnitEMITT

MMBTA92L, SMMBTA92L,MMBTA93LHigh Voltage TransistorsPNP Siliconwww.onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueCOLLECTORSite and Control Change Requirements; AEC-Q101 Qualified and3PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1CompliantBASEMAXIMUM RATINGS2Rating Symbol 92 93 UnitEMITTER

MMBTA92LT1G,MMBTA93LT1GHigh Voltage TransistorsPNP Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant3MAXIMUM RATINGS1Rating Symbol 92 93 UnitBASECollector-Emitter Voltage VCEO -300 -200 VdcCollector-Base Voltage VCBO -300 -200 Vdc2EMITTEREmitter-Base Voltage VEBO -5.0 -5.0 VdcCollector Curren

MMBTA92WPNP SiliconElektronische Bauelemente General Purpose TransistorMMBTA92W300VCE = 10 VdcTJ = +125C25020025C150-55C1005000.1 1.0 10 100IC, COLLECTOR CURRENT (mA)Figure 1. DC Current Gain100150Cib @ 1MHz1301101090Ccb @ 1MHz701.050TJ = 25CVCE = 20 Vdc30F = 20 MHz0.1100.1 1.0 10 100 10001 3 5 7 9 11 13 15 17 19 2

FM120-M WILLASTHRUMMBTA9xLT1FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VHigh Voltage TransistorSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optimize board

MMBTA92T Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-89 PNP Silicon PNP transistor in a SOT-89 Plastic Package. / Features ,,, MMBTA42T High voltage, low saturation voltage, low collector output capacitance, complementary pair with MMBTA42T. / Applications

SEMICONDUCTORMMBTA92FTECHNICAL DATATRANSISTOR (PNP) MMBTA92FAC HGFEATURES Low Collector-Emitter Saturation Voltage High Breakdown Voltage DDKF FMARKING : A92 DIM MILLIMETERSA 4.70 MAX_+B 2.50 0.20C 1.70 MAX1 2 3D 0.45+0.15/-0.10MAXIMUM RATINGS (Ta=25 unless otherwise noted) E 4.25 MAX_+F 1.50 0.10Symbol Parameter Value Unit G 0.40 T

MMBTA92-AUPNP HIGH VOLTAGE TRANSISTORSOT-23 Unit : inch(mm) VOLTAGE 300 Volt POWER 250 mWattFEATURES PNP silicon, planar design High voltage (max. 300V) Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard AEC-Q101 qualifiedMECHANICAL DATA Case: SOT-23, Plastic Terminals: Solderable per MIL-STD-750, Method 2026

General Purpose TransistorMMBTA92-G (PNP)RoHS DeviceFeaturesSOT-230.119(3.00) -High voltage transistor.0.110(2.80)30.056(1.40)0.047(1.20)Diagram:1 20.079(2.00)Collector0.071(1.80)30.006(0.15)0.003(0.08)10.041(1.05) 0.100(2.550)Base0.035(0.90) 0.089(2.250)20.004(0.10) maxEmitter0.020(0.50)0.020(0.50) 0.012(0.30)0.012(0.30) Dimensions in

www.msksemi.comMMBTA92-MSSemiconductor CompianceSemiconductor Compiance TRANSISTOR (PNP) FEATURES High voltage transistor 1. BASE2. EMITTERSOT23 MARKING:2D3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collecto

MMBTA92TRANSI STOR (PNP)MARKING: Equivalent Circuit:SOT-231.BASE2.EMITTER3.COLLECTORFEATURES: High Breakdown VoltageMAXIMUM RATINGS (Ta=25 unless otherwise noted)Parameter Symbol Value UnitCollector-Base Voltage VCBO -300 VCollector-Emitter Voltage VCEO -300 VEmitter-Base Voltage VEBO -5 VCollector Current -Continuous IC -200 mACollector Current -Puised ICM -