http://www.ymicpower.comYMP230N55 N-Channel Enhancement Mode Power MOSFET Product Summary General Description The YMP230N55 uses advanced trench technology and BVDSS typ. 55 V design to provide excellent RDS(ON) with low gate charge. RDS(ON) typ. 2 m This device is suitable for use in PWM, load switching and max. 3 m general purpose applications. ID 230 A Fea

A Product Line ofDiodes IncorporatedDMP2305UVT20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance Max IDMax RDS(on) V(BR)DSS Low On-Resistance(Note 6) TA = 25C Fast Switching Speed 60m @ VGS = -4.5V -4.23A Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) -20V 90m @ VGS = -2.5V -3.49A Halogen and Ant

DMP2305UP-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-23 60m @ VGS = -4.5V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 90m @ VGS = -2.5V Moisture Sensitivity: Level 1 per J-STD-020D 11

MMP2301Data SheetM-MOS Semiconductor Hong Kong Limited20V P-Channel Enhancement-Mode MOSFETVDS= -20VRDS(ON), Vgs@-4.5V, Ids@-2.8A = 100mRDS(ON), Vgs@-2.5V, Ids@-2.0A = 150mRDS(ON), Vgs@-1.8V, Ids@-2.0A = 170mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSOT- 23 Internal Schematic DiagramTop View P-Channel MOSFETM