All Transistors. MP2300A Datasheet

 

MP2300A Datasheet, Equivalent, Cross Reference Search


   Type Designator: MP2300A
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 106 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 2 V
   Maximum Collector Current |Ic max|: 25 A
   Max. Operating Junction Temperature (Tj): 110 °C
   Transition Frequency (ft): 0.2 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO3

 MP2300A Transistor Equivalent Substitute - Cross-Reference Search

   

MP2300A Datasheet (PDF)

 9.1. Size:1716K  1
ymp230n55.pdf

MP2300A
MP2300A

http://www.ymicpower.comYMP230N55 N-Channel Enhancement Mode Power MOSFET Product Summary General Description The YMP230N55 uses advanced trench technology and BVDSS typ. 55 V design to provide excellent RDS(ON) with low gate charge. RDS(ON) typ. 2 m This device is suitable for use in PWM, load switching and max. 3 m general purpose applications. ID 230 A Fea

 9.2. Size:200K  diodes
dmp2305uvt.pdf

MP2300A
MP2300A

A Product Line ofDiodes IncorporatedDMP2305UVT20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance Max IDMax RDS(on) V(BR)DSS Low On-Resistance(Note 6) TA = 25C Fast Switching Speed 60m @ VGS = -4.5V -4.23A Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) -20V 90m @ VGS = -2.5V -3.49A Halogen and Ant

 9.3. Size:128K  diodes
dmp2305u.pdf

MP2300A
MP2300A

DMP2305UP-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-23 60m @ VGS = -4.5V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 90m @ VGS = -2.5V Moisture Sensitivity: Level 1 per J-STD-020D 11

 9.4. Size:152K  m-mos
mmp2301.pdf

MP2300A
MP2300A

MMP2301Data SheetM-MOS Semiconductor Hong Kong Limited20V P-Channel Enhancement-Mode MOSFETVDS= -20VRDS(ON), Vgs@-4.5V, Ids@-2.8A = 100mRDS(ON), Vgs@-2.5V, Ids@-2.0A = 150mRDS(ON), Vgs@-1.8V, Ids@-2.0A = 170mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSOT- 23 Internal Schematic DiagramTop View P-Channel MOSFETM

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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