MP2300A PDF and Equivalents Search

 9.1. Size:1716K  1

 ymp230n55.pdf

http //www.ymicpower.com YMP230N55 N-Channel Enhancement Mode Power MOSFET Product Summary General Description The YMP230N55 uses advanced trench technology and BVDSS typ. 55 V design to provide excellent RDS(ON) with low gate charge. RDS(ON) typ. 2 m This device is suitable for use in PWM, load switching and max. 3 m general purpose applications. ID 230 A Fea... See More ⇒

 9.2. Size:200K  diodes

 dmp2305uvt.pdf

A Product Line of Diodes Incorporated DMP2305UVT 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance Max ID Max RDS(on) V(BR)DSS Low On-Resistance (Note 6) TA = 25 C Fast Switching Speed 60m @ VGS = -4.5V -4.23A Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) -20V 90m @ VGS = -2.5V -3.49A Halogen and Ant... See More ⇒

 9.3. Size:128K  diodes

 dmp2305u.pdf

DMP2305U P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case SOT-23 60m @ VGS = -4.5V Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 90m @ VGS = -2.5V Moisture Sensitivity Level 1 per J-STD-020D 11... See More ⇒

 9.4. Size:152K  m-mos

 mmp2301.pdf

MMP2301 Data Sheet M-MOS Semiconductor Hong Kong Limited 20V P-Channel Enhancement-Mode MOSFET VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-2.8A = 100m RDS(ON), Vgs@-2.5V, Ids@-2.0A = 150m RDS(ON), Vgs@-1.8V, Ids@-2.0A = 170m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance SOT- 23 Internal Schematic Diagram Top View P-Channel MOSFET M... See More ⇒