Discrete POWER & SignalTechnologiesMPSA12C TO-92BENPN Darlington TransistorThis device is designed for applications requiring extremelyhigh current gain at currents to 1.0 A. Sourced from Process05. See MPSA14 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCES Collector-Emitter Voltage 20 VV Collector-Base Vo

MCCTM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial ComponentsMPSA12CA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features This device is designed for applications requiring extremely highcurrent gain at current to 1.0ANPN Darlington Case Material: Molded Plastic. UL FlammabilityTransistorClassification Rating 94V-0 and MSL Rating

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPSA13/DDarlington TransistorsMPSA13NPN SiliconMPSA14**Motorola Preferred DeviceCOLLECTOR 3BASE2EMITTER 1123MAXIMUM RATINGSCASE 2904, STYLE 1TO92 (TO226AA)Rating Symbol Value UnitCollectorEmitter Voltage VCES 30 VdcCollectorBase Voltage VCBO 30 VdcEmitterBase Voltage VEBO 10 V

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPSA18/DLow Noise TransistorNPN SiliconMPSA18Motorola Preferred DeviceCOLLECTOR32BASE1EMITTER123MAXIMUM RATINGSCASE 2904, STYLE 1Rating Symbol Value UnitTO92 (TO226AA)CollectorEmitter Voltage VCEO 45 VdcCollectorBase Voltage VCBO 45 VdcEmitterBase Voltage VEBO 6.5 VdcColle

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186MPSA14NPN Darlington transistor1999 Apr 27Product specificationSupersedes data of 1997 Apr 24Philips Semiconductors Product specificationNPN Darlington transistor MPSA14FEATURES PINNING High current (max. 500 mA)PIN DESCRIPTION Low voltage (max. 30 V)1 collector High DC current gain (min. 10000).2 b

Discrete POWER & SignalTechnologiesMPSA18C TO-92BENPN General Purpose AmplifierThis device is designed for low noise, high gain, applications atcollector currents from 1 A to 50 mA. Sourced from Process07. See 2N5088 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 45 VV

MPSA13 MMBTA13 PZTA13CCEECBC TO-92BSOT-23BSOT-223EMark: 1MNPN Darlington TransistorThis device is designed for applications requiring extremelyhigh current gain at collector currents to 1.0 A. Sourced fromProcess 05. See MPSA14 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCES Collector-Emitter

MCCMPSA13TM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial ComponentsMPSA14CA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Capable of 1.5Watts of Power Dissipation.NPN Silicon Collector-current 500mA Collector-base Voltage 30VDarlington Transistor Operating and storage junction temperature range: -55OC to +150OC

MPSA13, MPSA14MPSA14 is a Preferred DeviceDarlington TransistorsNPN SiliconFeatureshttp://onsemi.com Pb-Free Packages are Available*COLLECTOR 3MAXIMUM RATINGS BASE2Rating Symbol Value UnitCollector-Emitter Voltage VCES 30 VdcCollector-Base Voltage VCBO 30 VdcEMITTER 1Emitter-Base Voltage VEBO 10 VdcCollector Current - Continuous IC 500 mAdcTotal Device Dissipa

MPSA13, MPSA14MPSA14 is a Preferred DeviceDarlington TransistorsNPN SiliconFeatureshttp://onsemi.com Pb-Free Packages are Available*COLLECTOR 3MAXIMUM RATINGS BASE2Rating Symbol Value UnitCollector-Emitter Voltage VCES 30 VdcCollector-Base Voltage VCBO 30 VdcEMITTER 1Emitter-Base Voltage VEBO 10 VdcCollector Current - Continuous IC 500 mAdcTotal Device Dissipa

MPSA13, MPSA14MPSA14 is a Preferred DeviceDarlington TransistorsNPN SiliconFeatureshttp://onsemi.com Pb-Free Packages are Available*COLLECTOR 3MAXIMUM RATINGS BASE2Rating Symbol Value UnitCollector-Emitter Voltage VCES 30 VdcCollector-Base Voltage VCBO 30 VdcEMITTER 1Emitter-Base Voltage VEBO 10 VdcCollector Current - Continuous IC 500 mAdcTotal Device Dissipa

MPSA18Preferred Device Low Noise TransistorNPN SiliconFeatures These are Pb-Free Devices*http://onsemi.comCOLLECTOR3MAXIMUM RATINGS2Rating Symbol Value Unit BASECollector-Emitter Voltage VCEO 45 Vdc1EMITTERCollector-Base Voltage VCBO 45 VdcEmitter-Base Voltage VEBO 6.5 VdcCollector Current - Continuous IC 200 mAdcTO-92Total Device Dissipation @ TA = 25

MPSA13, MPSA14MPSA14 is a Preferred DeviceDarlington TransistorsNPN SiliconFeatureshttp://onsemi.com Pb-Free Packages are Available*COLLECTOR 3MAXIMUM RATINGS BASE2Rating Symbol Value UnitCollector-Emitter Voltage VCES 30 VdcCollector-Base Voltage VCBO 30 VdcEMITTER 1Emitter-Base Voltage VEBO 10 VdcCollector Current - Continuous IC 500 mAdcTotal Device Dissipa

MPSA13, MPSA14MPSA14 is a Preferred DeviceDarlington TransistorsNPN SiliconFeatureshttp://onsemi.com Pb-Free Packages are Available*COLLECTOR 3MAXIMUM RATINGS BASE2Rating Symbol Value UnitCollector-Emitter Voltage VCES 30 VdcCollector-Base Voltage VCBO 30 VdcEMITTER 1Emitter-Base Voltage VEBO 10 VdcCollector Current - Continuous IC 500 mAdcTotal Device Dissipa

MPSA18Preferred Device Low Noise TransistorNPN SiliconFeatures These are Pb-Free Devices*http://onsemi.comCOLLECTOR3MAXIMUM RATINGS2Rating Symbol Value Unit BASECollector-Emitter Voltage VCEO 45 Vdc1EMITTERCollector-Base Voltage VCBO 45 VdcEmitter-Base Voltage VEBO 6.5 VdcCollector Current - Continuous IC 200 mAdcTO-92Total Device Dissipation @ TA = 25

MPSA18Preferred Device Low Noise TransistorNPN SiliconFeatures These are Pb-Free Devices*http://onsemi.comCOLLECTOR3MAXIMUM RATINGS2Rating Symbol Value Unit BASECollector-Emitter Voltage VCEO 45 Vdc1EMITTERCollector-Base Voltage VCBO 45 VdcEmitter-Base Voltage VEBO 6.5 VdcCollector Current - Continuous IC 200 mAdcTO-92Total Device Dissipation @ TA = 25

MPSA13, MPSA14MPSA14 is a Preferred DeviceDarlington TransistorsNPN SiliconFeatureshttp://onsemi.com Pb-Free Packages are Available*COLLECTOR 3MAXIMUM RATINGS BASE2Rating Symbol Value UnitCollector-Emitter Voltage VCES 30 VdcCollector-Base Voltage VCBO 30 VdcEMITTER 1Emitter-Base Voltage VEBO 10 VdcCollector Current - Continuous IC 500 mAdcTotal Device Dissipa

MPSA13, MPSA14MPSA14 is a Preferred DeviceDarlington TransistorsNPN SiliconFeatureshttp://onsemi.com Pb-Free Packages are Available*COLLECTOR 3MAXIMUM RATINGS BASE2Rating Symbol Value UnitCollector-Emitter Voltage VCES 30 VdcCollector-Base Voltage VCBO 30 VdcEMITTER 1Emitter-Base Voltage VEBO 10 VdcCollector Current - Continuous IC 500 mAdcTotal Device Dissipa

MPSA13, MPSA14MPSA14 is a Preferred DeviceDarlington TransistorsNPN SiliconFeatureshttp://onsemi.com Pb-Free Packages are Available*COLLECTOR 3MAXIMUM RATINGS BASE2Rating Symbol Value UnitCollector-Emitter Voltage VCES 30 VdcCollector-Base Voltage VCBO 30 VdcEMITTER 1Emitter-Base Voltage VEBO 10 VdcCollector Current - Continuous IC 500 mAdcTotal Device Dissipa

UNISONIC TECHNOLOGIES CO., LTD MPSA194 PNP SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR 1 DESCRIPTION TO-92The UTC MPSA194 is designed for high voltage low power switching applications especially for use in telephone andtelecommunication circuits. FEATURES * Collector-Emitter Voltage: V =400V CEO* Power Dissipation: 1.0W 1TO-92NL APPLICATIONS *

UTC MPSA13 NPN EPITAXIAL SILICON TRANSISTORDARLINGTON TRANSISTOR1DESCRIPTIONTO-92The UTC MPSA13 is a darlington transistor.1FEATURES*Collector-Emitter Voltage: Vces = 30VSOT-89*Collector Dissipation : Pc ( mas ) = 625 mW1SOT-23 TO-92 1:EMITTER 2:BASE 3:COLLECTOR SOT-89 1:EMITTER 2:COLLECTOR 3:BASE SOT-23 1:EMITTER 2:BASE 3:COLLECTORABSOLUTE MAXIMUM RATINGS ( Oper

UNISONIC TECHNOLOGIES CO., LTD MPSA113 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MPSA113 is a Darlington transistor. FEATURES * Collector-Emitter Voltage: VCES = 30V ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Halogen Free 1 2 3MPSA113-AB3-R MPSA113L-AB3-R MPSA113G-AB3-R SOT-89 E C B Tape Reel

MPSA13 / 14NPN Epitaxial Silicon TransistorRoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeTO-92 FEATURES Darlington TRANSISTOR1 Power dissipation 23 PCM: 0.625 W (Tamb=25) 1 2 3 Collector current 1. EMITTER ICM: 0.5 A 2. BASE Collector-base voltage 3 . COLLECTOR V(BR)CBO: 30 V Operating and storage junction temperature range

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN EPITAXIAL PLANAR DARLINGTON TRANSISTORS MPSA 13MPSA 14TO-92CBECCBBEEABSOLUTE MAXIMUM RATINGS.DESCRIPTION SYMBOL VALUE UNITCollector -Emitter Voltage VCES 30 VCollector -Base Voltage VCBO 30 VEmitter -Base Voltage VEBO 10 VCollector Current -Continuous IC 500 mAPower D

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 MPSA14 TRANSISTOR (NPN)1.EMITTERFEATURES 2.BASE Darlington Transistor3.COLLECTOR Equivalent Circuit MPSA14=Device code MPS Solid dot=Green molding compound device, if none,the normal deviceXXX=Code

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 MPSA13 TRANSISTOR (NPN)1.EMITTERFEATURES 2.BASE Darlington Transistors3.COLLECTOR Equivalent Circuit MPSA13=Device code MPS Solid dot=Green molding compound device, if none,the normal deviceXXX=Code

SEMICONDUCTOR MPSA13/14TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATIONS. DARLINGTON TRANSISTOR.B CN DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00MAXIMUM RATING (Ta=25 )F 1.27G 0.85CHARACTERISTIC SYMBOL RATING UNITH 0.45_HJ 14.00 + 0.50VCBOCollector-Base Voltage 30 VK 0.55 MAXF FL 2.30VCESCollecto

MPSA17TO-92 Transistor (NPN)TO-921. EMITTER2. BASE 3. COLLECTORFeatures High V(BR)EBO : 12V MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCEO Collector-Ease Voltage 40 VVEBO Emitter-Base Voltage 12 V IC Collector Current -Continuous 0.1 A Dimensions in inches and (millimeters)PC Collector Power Dissipation 300 mW Tj Junction Temper

MPSA13/MPSA14Plastic-Encapsulate TransistrosNPN Darlington Transistor1. EMITTER2. BASE 3. COLLECTOR1 2 3 TO-92Maximum Ratings(TA=25 C Unless O therwise Specified)Rating Symbol Value UnitVCEOCollector-Emitter Voltage 30V VCBOCollector-base Voltage 30 V VEBO10 V Emitter-base Voltage mACollector Current IC 500 Total Power Dissipation(TA=25C) 0.625PD W

SEMICONDUCTORMPSA13TECHNICAL DATAMPSA13 TRANSISTOR (NPN) B CFEATURES Darlington Transistors DIM MILLIMETERSA 4.70 MAXEB 4.80 MAXGC 3.70 MAXDD 0.55 MAXE 1.00F 1.27MAXIMUM RATINGS (Ta=25 unless otherwise noted) G 0.85H 0.45_HJ 14.00 + 0.50Symbol Parameter Value UnitsL 2.30F FVCBO Collector-Base Voltage 30 V M 0.51 MAXVCEO Collector-Emitter V