MPSA12 Todos los transistores

Discrete POWER & Signal Technologies MPSA12 C TO-92 B E NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage 20 V V Collector-Base Vo

MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components MPSA12 CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features This device is designed for applications requiring extremely high current gain at current to 1.0A NPN Darlington Case Material Molded Plastic. UL Flammability Transistor Classification Rating 94V-0 and MSL Rating

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPSA13/D Darlington Transistors MPSA13 NPN Silicon MPSA14* *Motorola Preferred Device COLLECTOR 3 BASE 2 EMITTER 1 1 2 3 MAXIMUM RATINGS CASE 29 04, STYLE 1 TO 92 (TO 226AA) Rating Symbol Value Unit Collector Emitter Voltage VCES 30 Vdc Collector Base Voltage VCBO 30 Vdc Emitter Base Voltage VEBO 10 V

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPSA18/D Low Noise Transistor NPN Silicon MPSA18 Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS CASE 29 04, STYLE 1 Rating Symbol Value Unit TO 92 (TO 226AA) Collector Emitter Voltage VCEO 45 Vdc Collector Base Voltage VCBO 45 Vdc Emitter Base Voltage VEBO 6.5 Vdc Colle

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 MPSA14 NPN Darlington transistor 1999 Apr 27 Product specification Supersedes data of 1997 Apr 24 Philips Semiconductors Product specification NPN Darlington transistor MPSA14 FEATURES PINNING High current (max. 500 mA) PIN DESCRIPTION Low voltage (max. 30 V) 1 collector High DC current gain (min. 10000). 2 b

Discrete POWER & Signal Technologies MPSA18 C TO-92 B E NPN General Purpose Amplifier This device is designed for low noise, high gain, applications at collector currents from 1 A to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 45 V V

MPSA13 MMBTA13 PZTA13 C C E E C B C TO-92 B SOT-23 B SOT-223 E Mark 1M NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter

MPSA13, MPSA14 MPSA14 is a Preferred Device Darlington Transistors NPN Silicon Features http //onsemi.com Pb-Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS BASE 2 Rating Symbol Value Unit Collector-Emitter Voltage VCES 30 Vdc Collector-Base Voltage VCBO 30 Vdc EMITTER 1 Emitter-Base Voltage VEBO 10 Vdc Collector Current - Continuous IC 500 mAdc Total Device Dissipa

MPSA13, MPSA14 MPSA14 is a Preferred Device Darlington Transistors NPN Silicon Features http //onsemi.com Pb-Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS BASE 2 Rating Symbol Value Unit Collector-Emitter Voltage VCES 30 Vdc Collector-Base Voltage VCBO 30 Vdc EMITTER 1 Emitter-Base Voltage VEBO 10 Vdc Collector Current - Continuous IC 500 mAdc Total Device Dissipa

MPSA13, MPSA14 MPSA14 is a Preferred Device Darlington Transistors NPN Silicon Features http //onsemi.com Pb-Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS BASE 2 Rating Symbol Value Unit Collector-Emitter Voltage VCES 30 Vdc Collector-Base Voltage VCBO 30 Vdc EMITTER 1 Emitter-Base Voltage VEBO 10 Vdc Collector Current - Continuous IC 500 mAdc Total Device Dissipa

MPSA18 Preferred Device Low Noise Transistor NPN Silicon Features These are Pb-Free Devices* http //onsemi.com COLLECTOR 3 MAXIMUM RATINGS 2 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO 45 Vdc 1 EMITTER Collector-Base Voltage VCBO 45 Vdc Emitter-Base Voltage VEBO 6.5 Vdc Collector Current - Continuous IC 200 mAdc TO-92 Total Device Dissipation @ TA = 25

MPSA13, MPSA14 MPSA14 is a Preferred Device Darlington Transistors NPN Silicon Features http //onsemi.com Pb-Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS BASE 2 Rating Symbol Value Unit Collector-Emitter Voltage VCES 30 Vdc Collector-Base Voltage VCBO 30 Vdc EMITTER 1 Emitter-Base Voltage VEBO 10 Vdc Collector Current - Continuous IC 500 mAdc Total Device Dissipa

MPSA13, MPSA14 MPSA14 is a Preferred Device Darlington Transistors NPN Silicon Features http //onsemi.com Pb-Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS BASE 2 Rating Symbol Value Unit Collector-Emitter Voltage VCES 30 Vdc Collector-Base Voltage VCBO 30 Vdc EMITTER 1 Emitter-Base Voltage VEBO 10 Vdc Collector Current - Continuous IC 500 mAdc Total Device Dissipa

MPSA18 Preferred Device Low Noise Transistor NPN Silicon Features These are Pb-Free Devices* http //onsemi.com COLLECTOR 3 MAXIMUM RATINGS 2 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO 45 Vdc 1 EMITTER Collector-Base Voltage VCBO 45 Vdc Emitter-Base Voltage VEBO 6.5 Vdc Collector Current - Continuous IC 200 mAdc TO-92 Total Device Dissipation @ TA = 25

MPSA18 Preferred Device Low Noise Transistor NPN Silicon Features These are Pb-Free Devices* http //onsemi.com COLLECTOR 3 MAXIMUM RATINGS 2 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO 45 Vdc 1 EMITTER Collector-Base Voltage VCBO 45 Vdc Emitter-Base Voltage VEBO 6.5 Vdc Collector Current - Continuous IC 200 mAdc TO-92 Total Device Dissipation @ TA = 25

MPSA13, MPSA14 MPSA14 is a Preferred Device Darlington Transistors NPN Silicon Features http //onsemi.com Pb-Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS BASE 2 Rating Symbol Value Unit Collector-Emitter Voltage VCES 30 Vdc Collector-Base Voltage VCBO 30 Vdc EMITTER 1 Emitter-Base Voltage VEBO 10 Vdc Collector Current - Continuous IC 500 mAdc Total Device Dissipa

MPSA13, MPSA14 MPSA14 is a Preferred Device Darlington Transistors NPN Silicon Features http //onsemi.com Pb-Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS BASE 2 Rating Symbol Value Unit Collector-Emitter Voltage VCES 30 Vdc Collector-Base Voltage VCBO 30 Vdc EMITTER 1 Emitter-Base Voltage VEBO 10 Vdc Collector Current - Continuous IC 500 mAdc Total Device Dissipa

MPSA13, MPSA14 MPSA14 is a Preferred Device Darlington Transistors NPN Silicon Features http //onsemi.com Pb-Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS BASE 2 Rating Symbol Value Unit Collector-Emitter Voltage VCES 30 Vdc Collector-Base Voltage VCBO 30 Vdc EMITTER 1 Emitter-Base Voltage VEBO 10 Vdc Collector Current - Continuous IC 500 mAdc Total Device Dissipa

UNISONIC TECHNOLOGIES CO., LTD MPSA194 PNP SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR 1 DESCRIPTION TO-92 The UTC MPSA194 is designed for high voltage low power switching applications especially for use in telephone and telecommunication circuits. FEATURES * Collector-Emitter Voltage V =400V CEO * Power Dissipation 1.0W 1 TO-92NL APPLICATIONS *

UTC MPSA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR 1 DESCRIPTION TO-92 The UTC MPSA13 is a darlington transistor. 1 FEATURES *Collector-Emitter Voltage Vces = 30V SOT-89 *Collector Dissipation Pc ( mas ) = 625 mW 1 SOT-23 TO-92 1 EMITTER 2 BASE 3 COLLECTOR SOT-89 1 EMITTER 2 COLLECTOR 3 BASE SOT-23 1 EMITTER 2 BASE 3 COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Oper

UNISONIC TECHNOLOGIES CO., LTD MPSA113 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MPSA113 is a Darlington transistor. FEATURES * Collector-Emitter Voltage VCES = 30V ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Halogen Free 1 2 3 MPSA113-AB3-R MPSA113L-AB3-R MPSA113G-AB3-R SOT-89 E C B Tape Reel

MPSA13 / 14 NPN Epitaxial Silicon Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURES Darlington TRANSISTOR 1 Power dissipation 2 3 PCM 0.625 W (Tamb=25 ) 1 2 3 Collector current 1. EMITTER ICM 0.5 A 2. BASE Collector-base voltage 3 . COLLECTOR V(BR)CBO 30 V Operating and storage junction temperature range

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR DARLINGTON TRANSISTORS MPSA 13 MPSA 14 TO-92 CBE C C B B E E ABSOLUTE MAXIMUM RATINGS. DESCRIPTION SYMBOL VALUE UNIT Collector -Emitter Voltage VCES 30 V Collector -Base Voltage VCBO 30 V Emitter -Base Voltage VEBO 10 V Collector Current -Continuous IC 500 mA Power D

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 MPSA14 TRANSISTOR (NPN) 1.EMITTER FEATURES 2.BASE Darlington Transistor 3.COLLECTOR Equivalent Circuit MPSA14=Device code MPS Solid dot=Green molding compound device, if none,the normal device XXX=Code

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 MPSA13 TRANSISTOR (NPN) 1.EMITTER FEATURES 2.BASE Darlington Transistors 3.COLLECTOR Equivalent Circuit MPSA13=Device code MPS Solid dot=Green molding compound device, if none,the normal device XXX=Code

SEMICONDUCTOR MPSA13/14 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATIONS. DARLINGTON TRANSISTOR. B C N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 MAXIMUM RATING (Ta=25 ) F 1.27 G 0.85 CHARACTERISTIC SYMBOL RATING UNIT H 0.45 _ H J 14.00 + 0.50 VCBO Collector-Base Voltage 30 V K 0.55 MAX F F L 2.30 VCES Collecto

MPSA17 TO-92 Transistor (NPN) TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features High V(BR)EBO 12V MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCEO Collector-Ease Voltage 40 V VEBO Emitter-Base Voltage 12 V IC Collector Current -Continuous 0.1 A Dimensions in inches and (millimeters) PC Collector Power Dissipation 300 mW Tj Junction Temper

MPSA13/MPSA14 Plastic-Encapsulate Transistros NPN Darlington Transistor 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 TO-92 Maximum Ratings(TA=25 C Unless O therwise Specified) Rating Symbol Value Unit VCEO Collector-Emitter Voltage 30 V VCBO Collector-base Voltage 30 V VEBO 10 V Emitter-base Voltage mA Collector Current IC 500 Total Power Dissipation(TA=25 C) 0.625 PD W

SEMICONDUCTOR MPSA13 TECHNICAL DATA MPSA13 TRANSISTOR (NPN) B C FEATURES Darlington Transistors DIM MILLIMETERS A 4.70 MAX E B 4.80 MAX G C 3.70 MAX D D 0.55 MAX E 1.00 F 1.27 MAXIMUM RATINGS (Ta=25 unless otherwise noted) G 0.85 H 0.45 _ H J 14.00 + 0.50 Symbol Parameter Value Units L 2.30 F F VCBO Collector-Base Voltage 30 V M 0.51 MAX VCEO Collector-Emitter V