MPSA75 - описание и поиск аналогов

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPSA75/D Darlington Transistors PNP Silicon MPSA75 MPSA77 COLLECTOR 3 BASE 2 EMITTER 1 1 MAXIMUM RATINGS 2 3 Rating Symbol MPSA75 MPSA77 Unit CASE 29 04, STYLE 1 Collector Emitter Voltage VCES 40 60 Vdc TO 92 (TO 226AA) Emitter Base Voltage VEBO 10 Vdc Collector Current Continuous IC 500

DATA SHEET MPSA75 MPSA76 MPSA77 PNP DARLINGTON TRANSISTOR TO-92 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MPSA75 series are silicon PNP Darlington Transistors, manufactured by the epitaxial planar process, designed for applications requiring extremely high gain. MAXIMUM RATINGS (TA=25 C) SYMBOL MPSA75 MPSA76 MPSA77 UNITS Collector-Emitter Voltage VCES 40 50 60 V Collect

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPSA70/D Amplifier Transistor PNP Silicon MPSA70 COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 CASE 29 04, STYLE 1 TO 92 (TO 226AA) MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage VCEO 40 Vdc Emitter Base Voltage VEBO 4.0 Vdc Collector Current Continuous IC 100 mAdc Total Device Di

MPSA77 PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800mA. Sourced from process 61. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings * Ta=25 C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage -60 V VCBO Collector-Base Voltage -60 V VEBO Emitter-Base

TM Central Semiconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824

MPSA70 Amplifier Transistor PNP Silicon Features Pb-Free Package is Available* http //onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit 2 Collector -Emitter Voltage VCEO -40 Vdc BASE Emitter -Base Voltage VEBO -4.0 Vdc 1 Collector Current - Continuous IC -100 mAdc EMITTER Total Device Dissipation @ TA = 25 C PD 625 mW Derate above 25 C 5.0 mW/ C Total Devi

SEMICONDUCTOR MPSA77 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR DARLINGTON TRANSISTOR B C FEATURES Complementary to MPSA27. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 MAXIMUM RATINGS (Ta=25 ) E 1.00 F 1.27 G 0.85 CHARACTERISTIC SYMBOL RATING UNIT H 0.45 _ H J 14.00 + 0.50 VCBO -60 V Collector-Base Voltage K 0.55 MAX F F L 2.30 VCES Collect

MPSA70M290,MPSP70M290,MPSC70M290, MPSH70M290 FEATURES APPLICATIONS BVDSS=700V, ID=15A Switch Mode Power Supply (SMPS) RDS(on) 0.29 (Max)@VGS=10V Uninterruptible Power Supply (UPS) Very low FOM RDS(on) Qg Power Factor Correction (PFC) 100% avalanche tested RoHS compliant TO-262 TO-220F TO-263 TO-220 Device Marking and Package Information Ordering code

MPSA70M300CFD 700V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on) Qg 100% avalanche tested RoHS compliant Ultra-fast body diode Very high commutation ruggdness G D S TO-220F APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Resonant switching stages Device Marking and Pack

MPSA70M200CFD 700V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on) Qg 100% avalanche tested RoHS compliant Ultra-fast body diode Very high commutation ruggdness G D S TO-220F APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Resonant switching stages Device Marking and Pack