Биполярный транзистор MPSW07 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: MPSW07
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 1 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V
Макcимальный постоянный ток коллектора (Ic): 0.25 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 50 MHz
Статический коэффициент передачи тока (hfe): 80
Корпус транзистора: TO92
MPSW07 Datasheet (PDF)
mpsw05 mpsw06.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPSW05/DOne Watt Amplifier TransistorsMPSW05NPN Silicon*MPSW06*Motorola Preferred DeviceCOLLECTOR32BASE1EMITTER1MAXIMUM RATINGS23Rating Symbol MPSW05 MPSW06 UnitCASE 2905, STYLE 1CollectorEmitter Voltage VCEO 60 80 VdcTO92 (TO226AE)CollectorBase Voltage VCBO 60 80 VdcEmitte
mpsw01rev0d.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPSW01/DOne Watt High Current TransistorsMPSW01NPN Silicon*MPSW01ACOLLECTOR3*Motorola Preferred Device2BASE1EMITTERMAXIMUM RATINGSRating Symbol Value Unit12CollectorEmitter Voltage VCEO Vdc 3MPSW01 30MPSW01A 40CASE 2905, STYLE 1TO92 (TO226AE)CollectorBase Voltage VCBO Vdc
mpsw06.pdf
Discrete POWER & SignalTechnologiesMPSW06TO-226CBENPN General Purpose AmplifierThis device is designed for general purpose amplifier applicationsat collector currents to 300 mA. Sourced from Process 33. SeeMPSA06 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 80 VVCBO Collector
mpsw01.pdf
MPSW01NPN General Purpose AmplifierFeatures This device is designed for general purpose medium power amplifiers Sourced from process 37 Absolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 30 VVCBO Collector-Base Voltage 40 VVEBO Emitter-Base Voltage 5.0 VIC Collector Current - Continuous 1.0 APD Tota
mpsw01-a.pdf
MPSW01, MPSW01AOne Watt High CurrentTransistorsNPN SiliconFeatures http://onsemi.com Pb-Free Packages are Available*COLLECTOR32MAXIMUM RATINGSBASERating Symbol Value UnitCollector-Emitter Voltage VCEO Vdc1MPSW01 30EMITTERMPSW01A 40Collector-Base Voltage VCBO VdcMPSW01 40MPSW01A 50Emitter-Base Voltage VEBO 5.0 VdcCollector Current - Continuous IC 1000
mpsw05 mpsw06.pdf
MPSW05, MPSW06One Watt AmplifierTransistorsNPN Siliconhttp://onsemi.comFeatures Pb-Free Packages are Available*COLLECTOR32MAXIMUM RATINGSBASERating Symbol Value Unit1EMITTERCollector-Emitter Voltage MPSW05 VCEO 60 VdcMPSW06 80Collector-Base Voltage MPSW05 VCBO 60 VdcMPSW06 80Emitter-Base Voltage VEBO 4.0 VdcCollector Current - Continuous IC 500 mAdc TO
Другие транзисторы... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050