MRF327 datasheet, аналоги, основные параметры
Наименование производителя: MRF327
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 250 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимальный постоянный ток коллектора (Ic): 9 A
Предельная температура PN-перехода (Tj): 200 °C
Электрические характеристики
Корпус транзистора: TO128
Аналоги (замена) для MRF327
- подборⓘ биполярного транзистора по параметрам
MRF327 даташит
..1. Size:128K motorola
mrf327.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF327/D The RF Line NPN Silicon MRF327 RF Power Transistor . . . designed primarily for wideband large signal output amplifier stages in the 100 to 500 MHz frequency range. Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 80 Watts over 225 to 400 MHz Band 80 W, 100 to 500 MHz Minimum Gain = 7.3 dB @ 400 MHz
0.1. Size:128K motorola
mrf327re.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF327/D The RF Line NPN Silicon MRF327 RF Power Transistor . . . designed primarily for wideband large signal output amplifier stages in the 100 to 500 MHz frequency range. Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 80 Watts over 225 to 400 MHz Band 80 W, 100 to 500 MHz Minimum Gain = 7.3 dB @ 400 MHz
0.2. Size:166K motorola
mrf327rev1.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF327/D The RF Line NPN Silicon MRF327 RF Power Transistor . . . designed primarily for wideband large signal output amplifier stages in the 100 to 500 MHz frequency range. Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 80 Watts over 225 to 400 MHz Band 80 W, 100 to 500 MHz Minimum Gain = 7.3 dB @ 400 MHz
9.1. Size:110K motorola
mrf323re.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF323/D The RF Line NPN Silicon MRF323 RF Power Transistor . . . designed primarily for wideband large signal driver and predriver amplifier stages in the 200 500 MHz frequency range. Guaranteed Performance at 400 MHz, 28 V Output Power = 20 Watts 20 W, 400 MHz Power Gain = 10 dB Min RF POWER Efficiency = 50% M
9.2. Size:114K motorola
mrf321.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF321/D The RF Line NPN Silicon MRF321 RF Power Transistor . . . designed primarily for wideband large signal driver and predriver amplifier stages in 200 500 MHz frequency range. Guaranteed Performance at 400 MHz, 28 Vdc Output Power = 10 Watts 10 W, 400 MHz Power Gain = 12 dB Min RF POWER Efficiency = 50% Min
9.3. Size:95K motorola
mrf325re.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF325/D The RF Line NPN Silicon MRF325 RF Power Transistor . . . designed primarily for wideband large signal output and driver amplifier stages in 100 to 500 MHz frequency range. Specified 28 Volt, 400 MHz Characteristics Output Power = 30 Watts 30 W, 225 to 400 MHz Minimum Gain = 8.5 dB CONTROLLED Q E
9.4. Size:107K motorola
mrf329.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF329/D The RF Line NPN Silicon MRF329 RF Power Transistor . . . designed primarily for wideband large signal output and driver amplifier stages in the 100 to 500 MHz frequency range. Specified 28 Volt, 400 MHz Characteristics Output Power = 100 Watts 100 W, 100 to 500 MHz Minimum Gain = 7.0 dB CONTROLLED Q
9.5. Size:107K motorola
mrf326re.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF326/D The RF Line NPN Silicon MRF326 RF Power Transistor . . . designed primarily for wideband large signal output amplifier stages in the 100 to 500 MHz frequency range. Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 40 Watts 40 W, 225 to 400 MHz Minimum Gain = 9.0 dB CONTROLLED Q BROADBAND RF P
9.6. Size:114K motorola
mrf321re.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF321/D The RF Line NPN Silicon MRF321 RF Power Transistor . . . designed primarily for wideband large signal driver and predriver amplifier stages in 200 500 MHz frequency range. Guaranteed Performance at 400 MHz, 28 Vdc Output Power = 10 Watts 10 W, 400 MHz Power Gain = 12 dB Min RF POWER Efficiency = 50% Min
9.7. Size:107K motorola
mrf326.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF326/D The RF Line NPN Silicon MRF326 RF Power Transistor . . . designed primarily for wideband large signal output amplifier stages in the 100 to 500 MHz frequency range. Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 40 Watts 40 W, 225 to 400 MHz Minimum Gain = 9.0 dB CONTROLLED Q BROADBAND RF P
9.8. Size:95K motorola
mrf325.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF325/D The RF Line NPN Silicon MRF325 RF Power Transistor . . . designed primarily for wideband large signal output and driver amplifier stages in 100 to 500 MHz frequency range. Specified 28 Volt, 400 MHz Characteristics Output Power = 30 Watts 30 W, 225 to 400 MHz Minimum Gain = 8.5 dB CONTROLLED Q E
9.9. Size:110K motorola
mrf323.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF323/D The RF Line NPN Silicon MRF323 RF Power Transistor . . . designed primarily for wideband large signal driver and predriver amplifier stages in the 200 500 MHz frequency range. Guaranteed Performance at 400 MHz, 28 V Output Power = 20 Watts 20 W, 400 MHz Power Gain = 10 dB Min RF POWER Efficiency = 50% M
9.10. Size:107K motorola
mrf329re.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF329/D The RF Line NPN Silicon MRF329 RF Power Transistor . . . designed primarily for wideband large signal output and driver amplifier stages in the 100 to 500 MHz frequency range. Specified 28 Volt, 400 MHz Characteristics Output Power = 100 Watts 100 W, 100 to 500 MHz Minimum Gain = 7.0 dB CONTROLLED Q
Другие транзисторы: MRF314, MRF315, MRF316, MRF317, MRF321, MRF323, MRF325, MRF326, 2N5551, MRF328, MRF331, MRF340, MRF342, MRF3866R2, MRF401, MRF402, MRF404
