All Transistors. MRF327 Datasheet

 

MRF327 Datasheet, Equivalent, Cross Reference Search

Type Designator: MRF327

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 250 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector Current |Ic max|: 9 A

Max. Operating Junction Temperature (Tj): 200 °C

Noise Figure, dB: -

Package: TO128

MRF327 Transistor Equivalent Substitute - Cross-Reference Search

 

MRF327 Datasheet (PDF)

1.1. mrf327rev1.pdf Size:166K _motorola

MRF327
MRF327

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF327/D The RF Line NPN Silicon MRF327 RF Power Transistor . . . designed primarily for wideband largesignal output amplifier stages in the 100 to 500 MHz frequency range. Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 80 Watts over 225 to 400 MHz Band 80 W, 100 to 500 MHz Minimum Gain = 7.3 dB @ 400 MHz CONTRO

1.2. mrf327re.pdf Size:128K _motorola

MRF327
MRF327

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF327/D The RF Line NPN Silicon MRF327 RF Power Transistor . . . designed primarily for wideband largesignal output amplifier stages in the 100 to 500 MHz frequency range. Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 80 Watts over 225 to 400 MHz Band 80 W, 100 to 500 MHz Minimum Gain = 7.3 dB @ 400 MHz CONTRO

 5.1. mrf329.pdf Size:80K _update

MRF327
MRF327



5.2. mrf321re.pdf Size:114K _motorola

MRF327
MRF327

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF321/D The RF Line NPN Silicon MRF321 RF Power Transistor . . . designed primarily for wideband largesignal driver and predriver amplifier stages in 200500 MHz frequency range. Guaranteed Performance at 400 MHz, 28 Vdc Output Power = 10 Watts 10 W, 400 MHz Power Gain = 12 dB Min RF POWER Efficiency = 50% Min TRANSIS

 5.3. mrf323re.pdf Size:110K _motorola

MRF327
MRF327

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF323/D The RF Line NPN Silicon MRF323 RF Power Transistor . . . designed primarily for wideband largesignal driver and predriver amplifier stages in the 200500 MHz frequency range. Guaranteed Performance at 400 MHz, 28 V Output Power = 20 Watts 20 W, 400 MHz Power Gain = 10 dB Min RF POWER Efficiency = 50% Min TRANS

5.4. mrf326re.pdf Size:107K _motorola

MRF327
MRF327

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF326/D The RF Line NPN Silicon MRF326 RF Power Transistor . . . designed primarily for wideband largesignal output amplifier stages in the 100 to 500 MHz frequency range. Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 40 Watts 40 W, 225 to 400 MHz Minimum Gain = 9.0 dB CONTROLLED Q BROADBAND RF POWER Bui

 5.5. mrf329re.pdf Size:107K _motorola

MRF327
MRF327

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF329/D The RF Line NPN Silicon MRF329 RF Power Transistor . . . designed primarily for wideband largesignal output and driver amplifier stages in the 100 to 500 MHz frequency range. Specified 28 Volt, 400 MHz Characteristics Output Power = 100 Watts 100 W, 100 to 500 MHz Minimum Gain = 7.0 dB CONTROLLED Q Efficien

5.6. mrf325re.pdf Size:95K _motorola

MRF327
MRF327

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF325/D The RF Line NPN Silicon MRF325 RF Power Transistor . . . designed primarily for wideband largesignal output and driver amplifier stages in 100 to 500 MHz frequency range. Specified 28 Volt, 400 MHz Characteristics Output Power = 30 Watts 30 W, 225 to 400 MHz Minimum Gain = 8.5 dB CONTROLLED Q Efficiency = 5

Datasheet: 2SC431 , 2SC4310 , 2SC4311 , 2SC4312 , 2SC4313 , 2SC4314 , 2SC4315 , 2SC4316 , BC147 , 2SC4318 , 2SC432 , 2SC4320 , 2SC4321 , 2SC4322 , 2SC4323 , 2SC4324 , 2SC4325 .

 
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