Биполярный транзистор MRF502 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: MRF502
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.5 W
Макcимально допустимое напряжение коллектор-база (Ucb): 35 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 15 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 3 V
Макcимальный постоянный ток коллектора (Ic): 0.05 A
Предельная температура PN-перехода (Tj): 175 °C
Граничная частота коэффициента передачи тока (ft): 800 MHz
Статический коэффициент передачи тока (hfe): 40
Корпус транзистора: TO72
MRF502 Datasheet (PDF)
mrf5007 mrf5007r1.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5007/DThe RF MOSFET LineMRF5007RF Power Field Effect TransistorMRF5007R1NChannel EnhancementModeThe MRF5007 is designed for broadband commercial and industrial7.0 W, 7.5 Vdcapplications at frequencies to 520 MHz. The high gain and broadband512 MHzperformance of this device makes it ideal for largesig
mrf5015rev6d.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5015/DThe RF MOSFET LineRF Power Field Effect TransistorNChannel EnhancementMode MRF5015Designed for broadband commercial and industrial applications at frequen-cies to 520 MHz. The high gain and broadband performance of this devicemakes it ideal for largesignal, common source amplifier applications in 12.5
mrf5003r.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5003/DThe RF MOSFET LineRF Power Field Effect TransistorNChannel EnhancementMode MRF5003The MRF5003 is designed for broadband commercial and industrialapplications at frequencies to 520 MHz. The high gain and broadbandperformance of this device makes it ideal for largesignal, common sourceamplifier applica
mrf5015.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5015/DThe RF MOSFET LineRF Power Field Effect TransistorNChannel EnhancementMode MRF5015Designed for broadband commercial and industrial applications at frequen-cies to 520 MHz. The high gain and broadband performance of this devicemakes it ideal for largesignal, common source amplifier applications in 12.5
mrf5007rev2.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5007/DThe RF MOSFET LineMRF5007RF Power Field Effect TransistorMRF5007R1NChannel EnhancementModeThe MRF5007 is designed for broadband commercial and industrial7.0 W, 7.5 Vdcapplications at frequencies to 520 MHz. The high gain and broadband512 MHzperformance of this device makes it ideal for largesig
mrf5015r.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5015/DThe RF MOSFET LineRF Power Field Effect TransistorNChannel EnhancementMode MRF5015Designed for broadband commercial and industrial applications at frequen-cies to 520 MHz. The high gain and broadband performance of this devicemakes it ideal for largesignal, common source amplifier applications in 12.5
mrf5007r.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5007/DThe RF MOSFET LineMRF5007RF Power Field Effect TransistorNChannel EnhancementModeThe MRF5007 is designed for broadband commercial and industrial7.0 W, 7.5 Vdcapplications at frequencies to 520 MHz. The high gain and broadband512 MHzperformance of this device makes it ideal for largesignal, common
mrf5035r.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5035/DThe RF MOSFET LineRF Power Field Effect TransistorNChannel EnhancementMode MRF5035Designed for broadband commercial and industrial applications at frequen-cies to 520 MHz. The high gain and broadband performance of this devicemakes it ideal for largesignal, common source amplifier applications in 12.5
mrf5007.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5007/DThe RF MOSFET LineMRF5007RF Power Field Effect TransistorNChannel EnhancementModeThe MRF5007 is designed for broadband commercial and industrial7.0 W, 7.5 Vdcapplications at frequencies to 520 MHz. The high gain and broadband512 MHzperformance of this device makes it ideal for largesignal, common
mrf5003.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5003/DThe RF MOSFET LineRF Power Field Effect TransistorNChannel EnhancementMode MRF5003The MRF5003 is designed for broadband commercial and industrialapplications at frequencies to 520 MHz. The high gain and broadbandperformance of this device makes it ideal for largesignal, common sourceamplifier applica
mrf5035.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5035/DThe RF MOSFET LineRF Power Field Effect TransistorNChannel EnhancementMode MRF5035Designed for broadband commercial and industrial applications at frequen-cies to 520 MHz. The high gain and broadband performance of this devicemakes it ideal for largesignal, common source amplifier applications in 12.5
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: SS8550W
History: SS8550W
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050