MRF502 Datasheet. Specs and Replacement
Type Designator: MRF502
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 800 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO72
- BJT ⓘ Cross-Reference Search
MRF502 datasheet
9.1. Size:161K motorola
mrf5007 mrf5007r1.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5007/D The RF MOSFET Line MRF5007 RF Power Field Effect Transistor MRF5007R1 N Channel Enhancement Mode The MRF5007 is designed for broadband commercial and industrial 7.0 W, 7.5 Vdc applications at frequencies to 520 MHz. The high gain and broadband 512 MHz performance of this device makes it ideal for large sig... See More ⇒
9.2. Size:154K motorola
mrf5015rev6d.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5015/D The RF MOSFET Line RF Power Field Effect Transistor N Channel Enhancement Mode MRF5015 Designed for broadband commercial and industrial applications at frequen- cies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large signal, common source amplifier applications in 12.5 ... See More ⇒
9.3. Size:206K motorola
mrf5003r.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5003/D The RF MOSFET Line RF Power Field Effect Transistor N Channel Enhancement Mode MRF5003 The MRF5003 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large signal, common source amplifier applica... See More ⇒
9.4. Size:138K motorola
mrf5015.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5015/D The RF MOSFET Line RF Power Field Effect Transistor N Channel Enhancement Mode MRF5015 Designed for broadband commercial and industrial applications at frequen- cies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large signal, common source amplifier applications in 12.5 ... See More ⇒
9.5. Size:161K motorola
mrf5007rev2.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5007/D The RF MOSFET Line MRF5007 RF Power Field Effect Transistor MRF5007R1 N Channel Enhancement Mode The MRF5007 is designed for broadband commercial and industrial 7.0 W, 7.5 Vdc applications at frequencies to 520 MHz. The high gain and broadband 512 MHz performance of this device makes it ideal for large sig... See More ⇒
9.6. Size:138K motorola
mrf5015r.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5015/D The RF MOSFET Line RF Power Field Effect Transistor N Channel Enhancement Mode MRF5015 Designed for broadband commercial and industrial applications at frequen- cies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large signal, common source amplifier applications in 12.5 ... See More ⇒
9.7. Size:158K motorola
mrf5007r.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5007/D The RF MOSFET Line MRF5007 RF Power Field Effect Transistor N Channel Enhancement Mode The MRF5007 is designed for broadband commercial and industrial 7.0 W, 7.5 Vdc applications at frequencies to 520 MHz. The high gain and broadband 512 MHz performance of this device makes it ideal for large signal, common... See More ⇒
9.8. Size:142K motorola
mrf5035r.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5035/D The RF MOSFET Line RF Power Field Effect Transistor N Channel Enhancement Mode MRF5035 Designed for broadband commercial and industrial applications at frequen- cies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large signal, common source amplifier applications in 12.5 ... See More ⇒
9.9. Size:158K motorola
mrf5007.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5007/D The RF MOSFET Line MRF5007 RF Power Field Effect Transistor N Channel Enhancement Mode The MRF5007 is designed for broadband commercial and industrial 7.0 W, 7.5 Vdc applications at frequencies to 520 MHz. The high gain and broadband 512 MHz performance of this device makes it ideal for large signal, common... See More ⇒
9.10. Size:206K motorola
mrf5003.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5003/D The RF MOSFET Line RF Power Field Effect Transistor N Channel Enhancement Mode MRF5003 The MRF5003 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large signal, common source amplifier applica... See More ⇒
9.11. Size:142K motorola
mrf5035.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5035/D The RF MOSFET Line RF Power Field Effect Transistor N Channel Enhancement Mode MRF5035 Designed for broadband commercial and industrial applications at frequen- cies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large signal, common source amplifier applications in 12.5 ... See More ⇒
Detailed specifications: MRF460, MRF463, MRF464, MRF472, MRF475, MRF476, MRF485, MRF501, 2SC1815, MRF515, MRF517, MRF5174, MRF5175, MRF5176, MRF5177, MRF519, MRF5211
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