MRF648 datasheet, аналоги, основные параметры
Наименование производителя: MRF648
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 233 W
Макcимально допустимое напряжение коллектор-база (Ucb): 36 V
Макcимальный постоянный ток коллектора (Ic): 10 A
Предельная температура PN-перехода (Tj): 175 °C
Электрические характеристики
Корпус транзистора: TO128
Аналоги (замена) для MRF648
- подборⓘ биполярного транзистора по параметрам
MRF648 даташит
9.1. Size:120K motorola
mrf6402.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF6402/D The RF Line NPN Silicon MRF6402 RF Power Transistor The MRF6402 is designed for 1.8 GHz Personal Communications Network (PCN) base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. For ease of design, this transi
9.2. Size:153K motorola
mrf6402rev7.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF6402/D The RF Line NPN Silicon MRF6402 RF Power Transistor The MRF6402 is designed for 1.8 GHz Personal Communications Network (PCN) base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. For ease of design, this transi
9.3. Size:99K motorola
mrf644.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF644/D The RF Line NPN Silicon MRF644 RF Power Transistor . . . designed for 12.5 Volt UHF large signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 470 MHz Characteristics Output Power = 25 Watts 25 W, 470 MHz Minimum Gain = 6.2 dB CONTROLLED Q
9.4. Size:276K motorola
mrf6404rev2.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF6404/D The RF Line MRF6404 NPN Silicon MRF6404K RF Power Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 30 W, 1.88 GHz 2.0 GHz. RF POWER TRANSISTOR Specified 26 Volts, 1.88 GHz Characteristics NPN SILICON
9.5. Size:70K motorola
mrf6414pht.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF6414PHT/D The RF Line MRF6414 NPN Silicon PHOTOMASTER RF Power Transistor CASE 333A 02, STYLE 2 C9 T2 +VCC R1 C8 P1 C5 D1 C6 C7 D2 C4 R2 RF OUTPUT RF INPUT C3 T1 50 W C1 C2 50 W C1, C3 100 pF, Chip Capacitor, Hight Q P1 1 k , Trimmer C2, C7 330 pF, Chip Capacitor, 0805 R1 1 k , Resistor C5, C8
9.7. Size:103K motorola
mrf641.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF641/D The RF Line NPN Silicon MRF641 RF Power Transistor . . . designed for 12.5 Volt UHF large signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 470 MHz Characteristics Output Power = 15 Watts 15 W, 470 MHz Minimum Gain = 7.8 dB CONTROLLED Q
9.9. Size:111K motorola
mrf6401r.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF6401/D The RF Line NPN Silicon MRF6401 RF Power Transistor The MRF6401 is designed for Class A common emitter, linear power amplifiers in the 1.0 2.0 GHz frequency range. It has been specifically designed for use in Personal Communications Network (PCN) base station and INMARSAT Standard M applications. Specifie
9.10. Size:70K motorola
mrf6414p.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF6414PHT/D The RF Line MRF6414 NPN Silicon PHOTOMASTER RF Power Transistor CASE 333A 02, STYLE 2 C9 T2 +VCC R1 C8 P1 C5 D1 C6 C7 D2 C4 R2 RF OUTPUT RF INPUT C3 T1 50 W C1 C2 50 W C1, C3 100 pF, Chip Capacitor, Hight Q P1 1 k , Trimmer C2, C7 330 pF, Chip Capacitor, 0805 R1 1 k , Resistor C5, C8
9.12. Size:228K motorola
mrf6404.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF6404/D The RF Line MRF6404 NPN Silicon RF Power Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 30 W, 1.88 GHz 2.0 GHz. RF POWER TRANSISTOR Specified 26 Volts, 1.88 GHz Characteristics NPN SILICON Output Po
9.13. Size:108K motorola
mrf6414r.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF6414/D The RF Line MRF6414 NPN Silicon RF Power Transistor The MRF6414 is designed for 26 volt UHF large signal, common emitter, class AB linear amplifier applications. 50 W, 960 MHz Specified 26 Volt, 960 MHz Characteristics RF POWER TRANSISTOR Output Power = 50 Watts NPN SILICON Minimum Gain = 8.5 dB @ 960 MHz, C
9.14. Size:69K motorola
mrf6401p.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF6401PHT/D The RF Line NPN Silicon MRF6401 RF Power Transistor PHOTOMASTER CASE 305C 02, STYLE 1 SOE200 PILL R4 R5 R6 + VCC R7 Q1 R8 R2 R3 C9 C10 C4 C3 TL11 TL10 C5 C6 C7 C8 TL6 TL4 C2 TL5 TL7 TL9 RF TL1 TL2 OUTPUT RF TP1 INPUT C1 DUT TL8 TL3 TL4 C1 1.5 pF, ATC Chip Capacitor 100A Q1 Tran
9.15. Size:228K motorola
mrf6404r.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF6404/D The RF Line MRF6404 NPN Silicon RF Power Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 30 W, 1.88 GHz 2.0 GHz. RF POWER TRANSISTOR Specified 26 Volts, 1.88 GHz Characteristics NPN SILICON Output Po
9.16. Size:99K motorola
mrf644re.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF644/D The RF Line NPN Silicon MRF644 RF Power Transistor . . . designed for 12.5 Volt UHF large signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 470 MHz Characteristics Output Power = 25 Watts 25 W, 470 MHz Minimum Gain = 6.2 dB CONTROLLED Q
9.17. Size:276K motorola
mrf6404 mrf6404k.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF6404/D The RF Line MRF6404 NPN Silicon MRF6404K RF Power Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 30 W, 1.88 GHz 2.0 GHz. RF POWER TRANSISTOR Specified 26 Volts, 1.88 GHz Characteristics NPN SILICON
9.18. Size:273K motorola
mrf6409.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF6409/D The RF Line NPN Silicon MRF6409 RF Power Transistor The MRF6409 is designed for GSM base stations applications. It incorpo- rates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. To be used in Class AB Specified 26 Volts, 960 MHz Characteris
9.19. Size:120K motorola
mrf6402r.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF6402/D The RF Line NPN Silicon MRF6402 RF Power Transistor The MRF6402 is designed for 1.8 GHz Personal Communications Network (PCN) base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. For ease of design, this transi
9.20. Size:103K motorola
mrf641re.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF641/D The RF Line NPN Silicon MRF641 RF Power Transistor . . . designed for 12.5 Volt UHF large signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 470 MHz Characteristics Output Power = 15 Watts 15 W, 470 MHz Minimum Gain = 7.8 dB CONTROLLED Q
9.21. Size:273K motorola
mrf6409rev0.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF6409/D The RF Line NPN Silicon MRF6409 RF Power Transistor The MRF6409 is designed for GSM base stations applications. It incorpo- rates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. To be used in Class AB Specified 26 Volts, 960 MHz Characteris
Другие транзисторы: MRF618, MRF619, MRF620, MRF621, MRF629, MRF641, MRF644, MRF646, 13005, MRF8003, MRF8004, MRF817, MRF818, MRF823, MRF824, MRF825, MRF835
