MRF648 Datasheet PDF and Equivalents Search

 9.1. Size:120K  motorola

 mrf6402.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF6402/D The RF Line NPN Silicon MRF6402 RF Power Transistor The MRF6402 is designed for 1.8 GHz Personal Communications Network (PCN) base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. For ease of design, this transi... See More ⇒

 9.2. Size:153K  motorola

 mrf6402rev7.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF6402/D The RF Line NPN Silicon MRF6402 RF Power Transistor The MRF6402 is designed for 1.8 GHz Personal Communications Network (PCN) base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. For ease of design, this transi... See More ⇒

 9.3. Size:99K  motorola

 mrf644.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF644/D The RF Line NPN Silicon MRF644 RF Power Transistor . . . designed for 12.5 Volt UHF large signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 470 MHz Characteristics Output Power = 25 Watts 25 W, 470 MHz Minimum Gain = 6.2 dB CONTROLLED Q ... See More ⇒

 9.4. Size:276K  motorola

 mrf6404rev2.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF6404/D The RF Line MRF6404 NPN Silicon MRF6404K RF Power Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 30 W, 1.88 GHz 2.0 GHz. RF POWER TRANSISTOR Specified 26 Volts, 1.88 GHz Characteristics NPN SILICON ... See More ⇒

 9.5. Size:70K  motorola

 mrf6414pht.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF6414PHT/D The RF Line MRF6414 NPN Silicon PHOTOMASTER RF Power Transistor CASE 333A 02, STYLE 2 C9 T2 +VCC R1 C8 P1 C5 D1 C6 C7 D2 C4 R2 RF OUTPUT RF INPUT C3 T1 50 W C1 C2 50 W C1, C3 100 pF, Chip Capacitor, Hight Q P1 1 k , Trimmer C2, C7 330 pF, Chip Capacitor, 0805 R1 1 k , Resistor C5, C8 ... See More ⇒

 9.6. Size:268K  motorola

 mrf6408r.pdf

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 9.7. Size:103K  motorola

 mrf641.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF641/D The RF Line NPN Silicon MRF641 RF Power Transistor . . . designed for 12.5 Volt UHF large signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 470 MHz Characteristics Output Power = 15 Watts 15 W, 470 MHz Minimum Gain = 7.8 dB CONTROLLED Q ... See More ⇒

 9.8. Size:268K  motorola

 mrf6408.pdf

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 9.9. Size:111K  motorola

 mrf6401r.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF6401/D The RF Line NPN Silicon MRF6401 RF Power Transistor The MRF6401 is designed for Class A common emitter, linear power amplifiers in the 1.0 2.0 GHz frequency range. It has been specifically designed for use in Personal Communications Network (PCN) base station and INMARSAT Standard M applications. Specifie... See More ⇒

 9.10. Size:70K  motorola

 mrf6414p.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF6414PHT/D The RF Line MRF6414 NPN Silicon PHOTOMASTER RF Power Transistor CASE 333A 02, STYLE 2 C9 T2 +VCC R1 C8 P1 C5 D1 C6 C7 D2 C4 R2 RF OUTPUT RF INPUT C3 T1 50 W C1 C2 50 W C1, C3 100 pF, Chip Capacitor, Hight Q P1 1 k , Trimmer C2, C7 330 pF, Chip Capacitor, 0805 R1 1 k , Resistor C5, C8 ... See More ⇒

 9.11. Size:230K  motorola

 mrf6408rev2.pdf

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 9.12. Size:228K  motorola

 mrf6404.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF6404/D The RF Line MRF6404 NPN Silicon RF Power Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 30 W, 1.88 GHz 2.0 GHz. RF POWER TRANSISTOR Specified 26 Volts, 1.88 GHz Characteristics NPN SILICON Output Po... See More ⇒

 9.13. Size:108K  motorola

 mrf6414r.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF6414/D The RF Line MRF6414 NPN Silicon RF Power Transistor The MRF6414 is designed for 26 volt UHF large signal, common emitter, class AB linear amplifier applications. 50 W, 960 MHz Specified 26 Volt, 960 MHz Characteristics RF POWER TRANSISTOR Output Power = 50 Watts NPN SILICON Minimum Gain = 8.5 dB @ 960 MHz, C... See More ⇒

 9.14. Size:69K  motorola

 mrf6401p.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF6401PHT/D The RF Line NPN Silicon MRF6401 RF Power Transistor PHOTOMASTER CASE 305C 02, STYLE 1 SOE200 PILL R4 R5 R6 + VCC R7 Q1 R8 R2 R3 C9 C10 C4 C3 TL11 TL10 C5 C6 C7 C8 TL6 TL4 C2 TL5 TL7 TL9 RF TL1 TL2 OUTPUT RF TP1 INPUT C1 DUT TL8 TL3 TL4 C1 1.5 pF, ATC Chip Capacitor 100A Q1 Tran... See More ⇒

 9.15. Size:228K  motorola

 mrf6404r.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF6404/D The RF Line MRF6404 NPN Silicon RF Power Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 30 W, 1.88 GHz 2.0 GHz. RF POWER TRANSISTOR Specified 26 Volts, 1.88 GHz Characteristics NPN SILICON Output Po... See More ⇒

 9.16. Size:99K  motorola

 mrf644re.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF644/D The RF Line NPN Silicon MRF644 RF Power Transistor . . . designed for 12.5 Volt UHF large signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 470 MHz Characteristics Output Power = 25 Watts 25 W, 470 MHz Minimum Gain = 6.2 dB CONTROLLED Q ... See More ⇒

 9.17. Size:276K  motorola

 mrf6404 mrf6404k.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF6404/D The RF Line MRF6404 NPN Silicon MRF6404K RF Power Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 30 W, 1.88 GHz 2.0 GHz. RF POWER TRANSISTOR Specified 26 Volts, 1.88 GHz Characteristics NPN SILICON ... See More ⇒

 9.18. Size:273K  motorola

 mrf6409.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF6409/D The RF Line NPN Silicon MRF6409 RF Power Transistor The MRF6409 is designed for GSM base stations applications. It incorpo- rates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. To be used in Class AB Specified 26 Volts, 960 MHz Characteris... See More ⇒

 9.19. Size:120K  motorola

 mrf6402r.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF6402/D The RF Line NPN Silicon MRF6402 RF Power Transistor The MRF6402 is designed for 1.8 GHz Personal Communications Network (PCN) base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. For ease of design, this transi... See More ⇒

 9.20. Size:103K  motorola

 mrf641re.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF641/D The RF Line NPN Silicon MRF641 RF Power Transistor . . . designed for 12.5 Volt UHF large signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 470 MHz Characteristics Output Power = 15 Watts 15 W, 470 MHz Minimum Gain = 7.8 dB CONTROLLED Q ... See More ⇒

 9.21. Size:273K  motorola

 mrf6409rev0.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF6409/D The RF Line NPN Silicon MRF6409 RF Power Transistor The MRF6409 is designed for GSM base stations applications. It incorpo- rates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. To be used in Class AB Specified 26 Volts, 960 MHz Characteris... See More ⇒