MRF902 datasheet и подбор замены

 9.1. Size:267K  motorola
 mmbr901lt1 mps901 mrf901 mrf9011lt1.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBR901LT1/D The RF Line MMBR901LT1, T3 NPN Silicon MPS901 MRF901 High-Frequency Transistor MRF9011LT1 Designed primarily for use in high gain, low noise small signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching times. High Current Gain Bandwidth Product IC

 9.2. Size:365K  freescale
 mrf9060.pdf 

Document Number MRF9060 Freescale Semiconductor Rev. 9, 5/2006 Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF9060LR1 Designed for broadband commercial and industrial applications with frequen- cies up to 1000 MHz. The high gain and broadband performance of these MRF9060LSR1 devices make them ideal for large-signal, common-source amplif

 9.3. Size:331K  freescale
 mrf9085.pdf 

Document Number MRF9085 Freescale Semiconductor Rev. 11, 5/2006 Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF9085LR3 Designed for broadband commercial and industrial applications with MRF9085LSR3 frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source am

 9.4. Size:481K  freescale
 mrf9080.pdf 

Document Number MRF9080 Freescale Semiconductor Rev. 6, 5/2006 Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF9080LR3 Designed for GSM 900 MHz frequency band, the high gain and broadband MRF9080LSR3 performance of these devices make them ideal for large - signal, common - source amplifier applications in 26 volt base station equipment.

 9.5. Size:351K  freescale
 mrf9030.pdf 

Document Number MRF9030 Freescale Semiconductor Rev. 8, 9/2008 Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequen- MRF9030LR1 cies up to 1000 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common-source amplifier applications in

 9.6. Size:392K  freescale
 mrf9045.pdf 

Document Number MRF9045 Freescale Semiconductor Rev. 11, 9/2008 Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF9045LR1 Designed for broadband commercial and industrial applications with frequen- cies up to 1000 MHz. The high gain and broadband performance of these MRF9045LSR1 devices make them ideal for large-signal, common-source ampli

 9.7. Size:394K  freescale
 mrf9002nr2.pdf 

Document Number MRF9002NR2 Freescale Semiconductor Rev. 8, 5/2006 Technical Data RF Power Field Effect Transistor Array N-Channel Enhancement-Mode Lateral MOSFET MRF9002NR2 Designed for broadband commercial and industrial applications with frequen cies to 1000 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common-source amplifier applica

 9.8. Size:449K  freescale
 mrf9060n.pdf 

Document Number MRF9060N Freescale Semiconductor Rev. 13, 6/2009 Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequen- MRF9060NR1 cies up to 1000 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common-source amplifier applications