MRF902 Datasheet, Equivalent, Cross Reference Search
Type Designator: MRF902
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 4500 MHz
Noise Figure, dB: -
Package: X39
MRF902 Transistor Equivalent Substitute - Cross-Reference Search
MRF902 Datasheet (PDF)
mmbr901lt1 mps901 mrf901 mrf9011lt1.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR901LT1/DThe RF LineMMBR901LT1, T3NPN SiliconMPS901 MRF901High-Frequency TransistorMRF9011LT1Designed primarily for use in highgain, lownoise smallsignal amplifiers foroperation up to 2.5 GHz. Also usable in applications requiring fast switchingtimes. High CurrentGain Bandwidth ProductIC
mrf9060.pdf
Document Number: MRF9060Freescale SemiconductorRev. 9, 5/2006Technical DataRF Power Field Effect TransistorsN-Channel Enhancement-Mode Lateral MOSFETsMRF9060LR1Designed for broadband commercial and industrial applications with frequen-cies up to 1000 MHz. The high gain and broadband performance of theseMRF9060LSR1devices make them ideal for large-signal, common-source amplif
mrf9085.pdf
Document Number: MRF9085Freescale SemiconductorRev. 11, 5/2006Technical DataRF Power Field Effect TransistorsN-Channel Enhancement-Mode Lateral MOSFETsMRF9085LR3Designed for broadband commercial and industrial applications withMRF9085LSR3frequencies from 865 to 895 MHz. The high gain and broadband performanceof these devices make them ideal for large-signal, common-source am
mrf9080.pdf
Document Number: MRF9080Freescale SemiconductorRev. 6, 5/2006Technical DataRF Power Field Effect TransistorsN-Channel Enhancement-Mode Lateral MOSFETsMRF9080LR3Designed for GSM 900 MHz frequency band, the high gain and broadbandMRF9080LSR3performance of these devices make them ideal for large - signal, common -source amplifier applications in 26 volt base station equipment.
mrf9030.pdf
Document Number: MRF9030Freescale SemiconductorRev. 8, 9/2008Technical DataRF Power Field Effect TransistorN-Channel Enhancement-Mode Lateral MOSFETDesigned for broadband commercial and industrial applications with frequen-MRF9030LR1cies up to 1000 MHz. The high gain and broadband performance of this devicemake it ideal for large-signal, common-source amplifier applications in
mrf9045.pdf
Document Number: MRF9045Freescale SemiconductorRev. 11, 9/2008Technical DataRF Power Field Effect TransistorsN-Channel Enhancement-Mode Lateral MOSFETsMRF9045LR1Designed for broadband commercial and industrial applications with frequen-cies up to 1000 MHz. The high gain and broadband performance of theseMRF9045LSR1devices make them ideal for large-signal, common-source ampli
mrf9002nr2.pdf
Document Number: MRF9002NR2Freescale SemiconductorRev. 8, 5/2006Technical DataRF Power Field Effect Transistor ArrayN-Channel Enhancement-Mode Lateral MOSFETMRF9002NR2Designed for broadband commercial and industrial applications with frequencies to 1000 MHz. The high gain and broadband performance of this devicemake it ideal for large-signal, common-source amplifier applica
mrf9060n.pdf
Document Number: MRF9060NFreescale SemiconductorRev. 13, 6/2009Technical DataRF Power Field Effect TransistorN-Channel Enhancement-Mode Lateral MOSFETDesigned for broadband commercial and industrial applications with frequen-MRF9060NR1cies up to 1000 MHz. The high gain and broadband performance of this devicemake it ideal for large-signal, common-source amplifier applications
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
