Справочник транзисторов. MRF914

 

Биполярный транзистор MRF914 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: MRF914
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.2 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 20 V
   Макcимальный постоянный ток коллектора (Ic): 0.04 A
   Предельная температура PN-перехода (Tj): 175 °C
   Граничная частота коэффициента передачи тока (ft): 4500 MHz
   Корпус транзистора: TO72

 Аналоги (замена) для MRF914

 

 

MRF914 Datasheet (PDF)

 9.1. Size:252K  motorola
mrf917t1.pdf

MRF914 MRF914

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAfrom RF MarketingThe RF Small Signal LineMRF917T1NPN SiliconHigh-Frequency TransistorsDesigned for low noise, wide dynamic range front end amplifiers, atLOW NOISEfrequencies to 1.5 GHz. Specifically aimed at portable communication devicesHIGH FREQUENCYsuch as pagers and handheld phones.TRANSISTOR Small, Sur

 9.2. Size:78K  motorola
mrf911.pdf

MRF914 MRF914

 9.3. Size:252K  motorola
mrf917t1rev0mds.pdf

MRF914 MRF914

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAfrom RF MarketingThe RF Small Signal LineMRF917T1NPN SiliconHigh-Frequency TransistorsDesigned for low noise, wide dynamic range front end amplifiers, atLOW NOISEfrequencies to 1.5 GHz. Specifically aimed at portable communication devicesHIGH FREQUENCYsuch as pagers and handheld phones.TRANSISTOR Small, Sur

 9.4. Size:309K  freescale
mrf9180.pdf

MRF914 MRF914

Document Number: MRF9180Freescale SemiconductorRev. 10, 5/2006Technical DataRF Power Field Effect TransistorN-Channel Enhancement-Mode Lateral MOSFETMRF9180R6Designed for broadband commercial and industrial applications withfrequencies from 865 to 895 MHz. The high gain and broadband performanceof this device make it ideal for large- signal, common- source amplifierapplicati

 9.5. Size:385K  freescale
mrf9135l.pdf

MRF914 MRF914

Document Number: MRF9135LFreescale SemiconductorRev. 8, 5/2006Technical DataRF Power Field Effect TransistorsN-Channel Enhancement-Mode Lateral MOSFETsDesigned for broadband commercial and industrial applications withMRF9135LR3frequencies from 865 to 895 MHz. The high gain and broadband performanceMRF9135LSR3of these devices make them ideal for large-signal, common-source am

Другие транзисторы... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , A1015 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

 

 
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