MRF914 Datasheet and Replacement
Type Designator: MRF914
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector Current |Ic max|: 0.04 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 4500 MHz
Noise Figure, dB: -
Package: TO72
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MRF914 Datasheet (PDF)
mrf917t1.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAfrom RF MarketingThe RF Small Signal LineMRF917T1NPN SiliconHigh-Frequency TransistorsDesigned for low noise, wide dynamic range front end amplifiers, atLOW NOISEfrequencies to 1.5 GHz. Specifically aimed at portable communication devicesHIGH FREQUENCYsuch as pagers and handheld phones.TRANSISTOR Small, Sur
mrf917t1rev0mds.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAfrom RF MarketingThe RF Small Signal LineMRF917T1NPN SiliconHigh-Frequency TransistorsDesigned for low noise, wide dynamic range front end amplifiers, atLOW NOISEfrequencies to 1.5 GHz. Specifically aimed at portable communication devicesHIGH FREQUENCYsuch as pagers and handheld phones.TRANSISTOR Small, Sur
mrf9180.pdf

Document Number: MRF9180Freescale SemiconductorRev. 10, 5/2006Technical DataRF Power Field Effect TransistorN-Channel Enhancement-Mode Lateral MOSFETMRF9180R6Designed for broadband commercial and industrial applications withfrequencies from 865 to 895 MHz. The high gain and broadband performanceof this device make it ideal for large- signal, common- source amplifierapplicati
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: KRA567U | UN621K | D11C1053 | CHDTA115TEGP | ZTX300 | BD544D | RN2972HFE
Keywords - MRF914 transistor datasheet
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History: KRA567U | UN621K | D11C1053 | CHDTA115TEGP | ZTX300 | BD544D | RN2972HFE



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