Справочник транзисторов. 2N503

 

Биполярный транзистор 2N503 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2N503
   Тип материала: Ge
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.06 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 20 V
   Макcимальный постоянный ток коллектора (Ic): 0.05 A
   Предельная температура PN-перехода (Tj): 85 °C
   Граничная частота коэффициента передачи тока (ft): 175 MHz
   Ёмкость коллекторного перехода (Cc): 2 pf
   Статический коэффициент передачи тока (hfe): 45
   Корпус транзистора: TO9

 Аналоги (замена) для 2N503

 

 

2N503 Datasheet (PDF)

 0.1. Size:124K  motorola
2n5038 2n5039.pdf

2N503 2N503

Order this documentMOTOROLAby 2N5038/DSEMICONDUCTOR TECHNICAL DATA2N5038*2N5039NPN Silicon Transistors*Motorola Preferred Device. . . fast switching speeds and high current capacity ideally suit these parts for use inswitching regulators, inverters, wideband amplifiers and power oscillators in20 AMPEREindustrial and commercial applications.NPN SILICONPOWER TRANSIS

 0.2. Size:42K  st
2n5038.pdf

2N503 2N503

2N5038HIGH CURRENT NPN SILICON TRANSISTOR STMicroelectronics PREFERREDSALESTYPE NPN TRANSISTOR DESCRIPTION The 2N5038 is a silicon planar multiepitaxial NPNtransistors in Jedec TO-3 metal case. They areespecially intended for high current and switching1applications.2TO-3INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCBO Collect

 0.3. Size:79K  onsemi
2n5038g.pdf

2N503 2N503

2N5038NPN Silicon TransistorsFast switching speeds and high current capacity ideally suit theseparts for use in switching regulators, inverters, wide-band amplifiersand power oscillators in industrial and commercial applications.Featureshttp://onsemi.com High Speed - tf = 0.5 ms (Max) High Current - IC(max) = 30 Amps20 AMPERE Low Saturation - VCE(sat) = 2.5 V (Max)

 0.4. Size:133K  onsemi
2n5038.pdf

2N503 2N503

2N5038NPN Silicon TransistorsFast switching speeds and high current capacity ideally suit theseparts for use in switching regulators, inverters, wide-band amplifiersand power oscillators in industrial and commercial applications.Featureshttp://onsemi.com High Speed - tf = 0.5 ms (Max) High Current - IC(max) = 30 Amps20 AMPERE Low Saturation - VCE(sat) = 2.5 V (Max)

 0.5. Size:95K  bocasemi
2n5038 2n5039.pdf

2N503 2N503

ABoca Semiconductor Corp. (BSC)http://www.bocasemi.comAhttp://www.bocasemi.comhttp://www.bocasemi.com

 0.6. Size:92K  jmnic
2n5038 2n5039.pdf

2N503 2N503

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5038/2N5039 DESCRIPTION With TO-3 package High current APPLICATIONS They are especially intended for high current and fast switching applications PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=) SYMBOL PARAMETER COND

 0.7. Size:83K  microsemi
2n5031.pdf

2N503 2N503

140 COMMERCE DRIVEMONTGOMERYVILLE, PA18936-1013PHONE: (215) 631-9840FAX: (215) 631-98552N5031RF & MICROWAVE DISCRETELOW POWER TRANSISTORSFeatures Silicon NPN, To-72 packaged VHF/UHF Transistor 1.2 GHz Current-Gain Bandwidth Product @ 5mA IC21. Emitter Maximum Unilateral Gain 12 dB (typ) @ 400 MHz2. Base1 33. Collector44. Case TO-72DESCRIPTION

 0.8. Size:165K  cn sptech
2n5038.pdf

2N503 2N503

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2N5038DESCRIPTIONHigh Speed-t = 0.5s (Max)fLow Saturation Voltage-V 2.5V@ I = 20ACE(sat) CAPPLICATIONSDesigned for use in switching regulators, inverters, wide-band amplifiers and power oscillators in industrial andcommercial applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

 0.9. Size:118K  inchange semiconductor
2n5038 2n5039.pdf

2N503 2N503

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5038 2N5039 DESCRIPTION With TO-3 package High speed Low collector saturation voltage APPLICATIONS They are especially intended for high current and fast switching applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute max

 0.10. Size:189K  inchange semiconductor
2n5038.pdf

2N503 2N503

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2N5038DESCRIPTIONHigh Speed-t = 0.5s (Max)fLow Saturation Voltage-V 2.5V@ I = 20ACE(sat) C100% avalanche testedMinimum Lot-to-Lot variations for robust devicePerformance and reliable operation.APPLICATIONSDesigned for use in switching regulators, inverters, wide-band amplifiers and power oscillators

Другие транзисторы... 2N5024 , 2N5025 , 2N5026 , 2N5027 , 2N5028 , 2N5029 , 2N502A , 2N502B , BC557 , 2N5030 , 2N5031 , 2N5032 , 2N5034 , 2N5035 , 2N5036 , 2N5037 , 2N5038 .

 

 
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