2N503 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Order this document MOTOROLA by 2N5038/D SEMICONDUCTOR TECHNICAL DATA 2N5038 * 2N5039 NPN Silicon Transistors *Motorola Preferred Device . . . fast switching speeds and high current capacity ideally suit these parts for use in switching regulators, inverters, wide band amplifiers and power oscillators in 20 AMPERE industrial and commercial applications. NPN SILICON POWER TRANSIS

2N5038 HIGH CURRENT NPN SILICON TRANSISTOR STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The 2N5038 is a silicon planar multiepitaxial NPN transistors in Jedec TO-3 metal case. They are especially intended for high current and switching 1 applications. 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collect

2N5038 NPN Silicon Transistors Fast switching speeds and high current capacity ideally suit these parts for use in switching regulators, inverters, wide-band amplifiers and power oscillators in industrial and commercial applications. Features http //onsemi.com High Speed - tf = 0.5 ms (Max) High Current - IC(max) = 30 Amps 20 AMPERE Low Saturation - VCE(sat) = 2.5 V (Max)

2N5038 NPN Silicon Transistors Fast switching speeds and high current capacity ideally suit these parts for use in switching regulators, inverters, wide-band amplifiers and power oscillators in industrial and commercial applications. Features http //onsemi.com High Speed - tf = 0.5 ms (Max) High Current - IC(max) = 30 Amps 20 AMPERE Low Saturation - VCE(sat) = 2.5 V (Max)

A Boca Semiconductor Corp. (BSC) http //www.bocasemi.com A http //www.bocasemi.com http //www.bocasemi.com

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5038/2N5039 DESCRIPTION With TO-3 package High current APPLICATIONS They are especially intended for high current and fast switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER COND

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE (215) 631-9840 FAX (215) 631-9855 2N5031 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features Silicon NPN, To-72 packaged VHF/UHF Transistor 1.2 GHz Current-Gain Bandwidth Product @ 5mA IC 2 1. Emitter Maximum Unilateral Gain 12 dB (typ) @ 400 MHz 2. Base 1 3 3. Collector 4 4. Case TO-72 DESCRIPTION

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2N5038 DESCRIPTION High Speed-t = 0.5 s (Max) f Low Saturation Voltage- V 2.5V@ I = 20A CE(sat) C APPLICATIONS Designed for use in switching regulators, inverters, wide- band amplifiers and power oscillators in industrial and commercial applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5038 2N5039 DESCRIPTION With TO-3 package High speed Low collector saturation voltage APPLICATIONS They are especially intended for high current and fast switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute max

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N5038 DESCRIPTION High Speed-t = 0.5 s (Max) f Low Saturation Voltage- V 2.5V@ I = 20A CE(sat) C 100% avalanche tested Minimum Lot-to-Lot variations for robust device Performance and reliable operation. APPLICATIONS Designed for use in switching regulators, inverters, wide- band amplifiers and power oscillators