2N503 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N503
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.06 W
Tensión colector-base (Vcb): 20 V
Corriente del colector DC máxima (Ic): 0.05 A
Temperatura operativa máxima (Tj): 85 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 175 MHz
Capacitancia de salida (Cc): 2 pF
Ganancia de corriente contínua (hfe): 45
Paquete / Cubierta: TO9
Búsqueda de reemplazo de transistor bipolar 2N503
2N503 Datasheet (PDF)
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Order this documentMOTOROLAby 2N5038/DSEMICONDUCTOR TECHNICAL DATA2N5038*2N5039NPN Silicon Transistors*Motorola Preferred Device. . . fast switching speeds and high current capacity ideally suit these parts for use inswitching regulators, inverters, wideband amplifiers and power oscillators in20 AMPEREindustrial and commercial applications.NPN SILICONPOWER TRANSIS
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2N5038HIGH CURRENT NPN SILICON TRANSISTOR STMicroelectronics PREFERREDSALESTYPE NPN TRANSISTOR DESCRIPTION The 2N5038 is a silicon planar multiepitaxial NPNtransistors in Jedec TO-3 metal case. They areespecially intended for high current and switching1applications.2TO-3INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCBO Collect
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2N5038NPN Silicon TransistorsFast switching speeds and high current capacity ideally suit theseparts for use in switching regulators, inverters, wide-band amplifiersand power oscillators in industrial and commercial applications.Featureshttp://onsemi.com High Speed - tf = 0.5 ms (Max) High Current - IC(max) = 30 Amps20 AMPERE Low Saturation - VCE(sat) = 2.5 V (Max)
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2N5038NPN Silicon TransistorsFast switching speeds and high current capacity ideally suit theseparts for use in switching regulators, inverters, wide-band amplifiersand power oscillators in industrial and commercial applications.Featureshttp://onsemi.com High Speed - tf = 0.5 ms (Max) High Current - IC(max) = 30 Amps20 AMPERE Low Saturation - VCE(sat) = 2.5 V (Max)
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2n5038 2n5039.pdf
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Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5038/2N5039 DESCRIPTION With TO-3 package High current APPLICATIONS They are especially intended for high current and fast switching applications PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=) SYMBOL PARAMETER COND
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140 COMMERCE DRIVEMONTGOMERYVILLE, PA18936-1013PHONE: (215) 631-9840FAX: (215) 631-98552N5031RF & MICROWAVE DISCRETELOW POWER TRANSISTORSFeatures Silicon NPN, To-72 packaged VHF/UHF Transistor 1.2 GHz Current-Gain Bandwidth Product @ 5mA IC21. Emitter Maximum Unilateral Gain 12 dB (typ) @ 400 MHz2. Base1 33. Collector44. Case TO-72DESCRIPTION
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SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2N5038DESCRIPTIONHigh Speed-t = 0.5s (Max)fLow Saturation Voltage-V 2.5V@ I = 20ACE(sat) CAPPLICATIONSDesigned for use in switching regulators, inverters, wide-band amplifiers and power oscillators in industrial andcommercial applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL
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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5038 2N5039 DESCRIPTION With TO-3 package High speed Low collector saturation voltage APPLICATIONS They are especially intended for high current and fast switching applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute max
2n5038.pdf
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INCHANGE Semiconductorisc Silicon NPN Power Transistor 2N5038DESCRIPTIONHigh Speed-t = 0.5s (Max)fLow Saturation Voltage-V 2.5V@ I = 20ACE(sat) C100% avalanche testedMinimum Lot-to-Lot variations for robust devicePerformance and reliable operation.APPLICATIONSDesigned for use in switching regulators, inverters, wide-band amplifiers and power oscillators
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .