Ordering number:ENN6457PNP/NPN Epitaxial Planar Silicon TransistorsFP207Push-Pull Circuit ApplicationsFeatures Package Dimensions Composite type with a PNP transistor and an NPNunit:mmtransistor contained in one package, facilitating high-2097Bdensity mounting.[FP207]4.5 Each device incorporated in the FP207 is equivalent3.42.8to the 2A1729 and to the 2SC4520

ATP207Ordering number : ENA1319ASANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceATP207ApplicationsFeatures Low ON-resistance Large current 4.5V drive Slim package Halogen free compliance Protection diode inSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrai

DMP2070UCB6P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Qg & Qgd Small FootprintID V(BR)DSS RDS(ON) Low Profile 0.62mm height TA = 25C Lead Free By Design/RoHS Compliant (Note 1) 70m @ VGS = -4.5V 3.5 A "Green" Device Halogen and Antimony Free (Note 2) -20V Qualified to AEC-Q101 Standards for High Reliability

Spec. No. : C417M3 Issued Date : 2012.02.17 CYStech Electronics Corp.Revised Date : 2013.08.12 Page No. : 1/8 20V P-CHANNEL Enhancement Mode MOSFET MTP2071M3 BVDSS -20VID -5A52m (typ.)RDSON@VGS=-4.5V, ID=-4.2A 66m (typ.)RDSON@VGS=-2.5V, ID=-2A 80m (typ.)RDSON@VGS=-1.8V, ID=-1A Features Single Drive Requirement Ultra High Speed Switching Pb-fr

Spec. No. : C196G6 Issued Date : 2011.01.20 CYStech Electronics Corp.Revised Date : Page No. : 1/10 N- Channel Enhancement mode MOSFET AND PNP BJT Complex Device MBNP2074G6 Description The MBNP2074G6 consists of a N-channel enhancement-mode MOSFET and a PNP BJT in a single TSOP-6 package, providing the designer with the best combination of fast switching, ruggedized device