P207 - описание и поиск аналогов

Ordering number ENN6457 PNP/NPN Epitaxial Planar Silicon Transistors FP207 Push-Pull Circuit Applications Features Package Dimensions Composite type with a PNP transistor and an NPN unit mm transistor contained in one package, facilitating high- 2097B density mounting. [FP207] 4.5 Each device incorporated in the FP207 is equivalent 3.4 2.8 to the 2A1729 and to the 2SC4520

ATP207 Ordering number ENA1319A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ATP207 Applications Features Low ON-resistance Large current 4.5V drive Slim package Halogen free compliance Protection diode in Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drai

DMP2070UCB6 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Qg & Qgd Small Footprint ID V(BR)DSS RDS(ON) Low Profile 0.62mm height TA = 25 C Lead Free By Design/RoHS Compliant (Note 1) 70m @ VGS = -4.5V 3.5 A "Green" Device Halogen and Antimony Free (Note 2) -20V Qualified to AEC-Q101 Standards for High Reliability

Spec. No. C417M3 Issued Date 2012.02.17 CYStech Electronics Corp. Revised Date 2013.08.12 Page No. 1/8 20V P-CHANNEL Enhancement Mode MOSFET MTP2071M3 BVDSS -20V ID -5A 52m (typ.) RDSON@VGS=-4.5V, ID=-4.2A 66m (typ.) RDSON@VGS=-2.5V, ID=-2A 80m (typ.) RDSON@VGS=-1.8V, ID=-1A Features Single Drive Requirement Ultra High Speed Switching Pb-fr

Spec. No. C196G6 Issued Date 2011.01.20 CYStech Electronics Corp. Revised Date Page No. 1/10 N- Channel Enhancement mode MOSFET AND PNP BJT Complex Device MBNP2074G6 Description The MBNP2074G6 consists of a N-channel enhancement-mode MOSFET and a PNP BJT in a single TSOP-6 package, providing the designer with the best combination of fast switching, ruggedized device