P207
Datasheet, Equivalent, Cross Reference Search
Type Designator: P207
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 100
W
Maximum Collector-Base Voltage |Vcb|: 40
V
Maximum Collector-Emitter Voltage |Vce|: 30
V
Maximum Collector Current |Ic max|: 25
A
Max. Operating Junction Temperature (Tj): 100
°C
Forward Current Transfer Ratio (hFE), MIN: 5
Noise Figure, dB: -
P207
Transistor Equivalent Substitute - Cross-Reference Search
P207
Datasheet (PDF)
0.1. Size:51K sanyo
fp207.pdf
Ordering number:ENN6457PNP/NPN Epitaxial Planar Silicon TransistorsFP207Push-Pull Circuit ApplicationsFeatures Package Dimensions Composite type with a PNP transistor and an NPNunit:mmtransistor contained in one package, facilitating high-2097Bdensity mounting.[FP207]4.5 Each device incorporated in the FP207 is equivalent3.42.8to the 2A1729 and to the 2SC4520
0.2. Size:443K sanyo
atp207.pdf
ATP207Ordering number : ENA1319ASANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceATP207ApplicationsFeatures Low ON-resistance Large current 4.5V drive Slim package Halogen free compliance Protection diode inSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrai
0.3. Size:196K diodes
dmp2070ucb6.pdf
DMP2070UCB6P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Qg & Qgd Small FootprintID V(BR)DSS RDS(ON) Low Profile 0.62mm height TA = 25C Lead Free By Design/RoHS Compliant (Note 1) 70m @ VGS = -4.5V 3.5 A "Green" Device Halogen and Antimony Free (Note 2) -20V Qualified to AEC-Q101 Standards for High Reliability
0.4. Size:283K cystek
mtp2071m3.pdf
Spec. No. : C417M3 Issued Date : 2012.02.17 CYStech Electronics Corp.Revised Date : 2013.08.12 Page No. : 1/8 20V P-CHANNEL Enhancement Mode MOSFET MTP2071M3 BVDSS -20VID -5A52m (typ.)RDSON@VGS=-4.5V, ID=-4.2A 66m (typ.)RDSON@VGS=-2.5V, ID=-2A 80m (typ.)RDSON@VGS=-1.8V, ID=-1A Features Single Drive Requirement Ultra High Speed Switching Pb-fr
0.5. Size:316K cystek
mbnp2074g6.pdf
Spec. No. : C196G6 Issued Date : 2011.01.20 CYStech Electronics Corp.Revised Date : Page No. : 1/10 N- Channel Enhancement mode MOSFET AND PNP BJT Complex Device MBNP2074G6 Description The MBNP2074G6 consists of a N-channel enhancement-mode MOSFET and a PNP BJT in a single TSOP-6 package, providing the designer with the best combination of fast switching, ruggedized device
Datasheet: 2SA1771
, 2SA178
, 2SA1790
, 2SA1791
, 2SA1792
, 2SA1793
, 2SA1794
, 2SA1795
, BC557
, 2SA1799
, 2SA17H
, 2SA18
, 2SA180
, 2SA1800
, 2SA1800O
, 2SA1800R
, 2SA1800Y
.