Биполярный транзистор P213 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: P213
Тип материала: Ge
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 11 W
Макcимально допустимое напряжение коллектор-база (Ucb): 45 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 15 V
Макcимальный постоянный ток коллектора (Ic): 5 A
Предельная температура PN-перехода (Tj): 75 °C
Статический коэффициент передачи тока (hfe): 20
P213 Datasheet (PDF)
atp213.pdf
ATP213Ordering number : ENA1526ASANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceATP213ApplicationsFeatures Low ON-resistance Large current 4V drive Slim package Halogen free compliance Protection diode inSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-
fp213.pdf
Ordering number:EN4724FP213PNP Epitaxial Planar Silicon TransistorMotor Driver ApplicationsFeatures Package Dimensions Composite type with 2 PNP transistors facilitatingunit:mmhigh-density mounting.2097A The FP213 is composed of 2 chips, each being[FP213]equivalent to the 2SB1397, placed in one package.Electrical Connection1:Base2:Collector1:Base3:Emitter C
bup213.pdf
BUP 213IGBTPreliminary data Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche ratedPin 1 Pin 2 Pin 3G C EType VCE IC Package Ordering CodeBUP 213 1200V 32A TO-220 AB Q67040-A4407-A2Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE = 20 k 1200Gate-
dmp2130l.pdf
DMP2130LP-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low RDS(ON): Case: SOT-23 Case Material - Molded Plastic, Green Molding Compound. 75 m @VGS = -4.5V UL Flammability Rating 94V-0 110 m @VGS = -2.7V Moisture Sensitivity: Level 1 per J-STD-020D 12
dmp2130ldm.pdf
DMP2130LDMP-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low RDS(ON): Case: SOT-26 Case Material Molded Plastic. UL Flammability Rating 94V-0 80 m @VGS = -4.5V Moisture Sensitivity: Level 1 per J-STD-020D 110 m @VGS = -2.7V Terminals: Finish - Matte Tin
dmp213dufa.pdf
DMP213DUFA25V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 0.4mm Ultra Low Profile Package for Thin Application ID V(BR)DSS RDS(ON) 0.48mm2 Package Footprint, 16 Times Smaller than SOT23 TA = +25C 10 @ VGS = -4.5V -166mA Low VGS(th), Can be Driven Directly From a Battery -25V 13 @ VGS = -2.7V -138mA Low RDS(on) ESD Protected Gate
aosp21321.pdf
AOSP2132130V P-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -11A High Current Capability RDS(ON) (at VGS=-10V)
aosp21357.pdf
AOSP2135730V P-Channel MOSFETGeneral Description Product SummaryVDS Latest advanced trench technology -30V Low RDS(ON) ID (at VGS=-10V) -16A High Current capability RDS(ON) (at VGS=-10V)
aosp21307.pdf
AOSP2130730V P-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -14A High Current Capability RDS(ON) (at VGS=-10V)
dmp2130l.pdf
Product specificationDMP2130LP-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low RDS(ON): Case: SOT23 Case Material - Molded Plastic, Green Molding Compound. 75 m @VGS = -4.5V UL Flammability Rating 94V-0 110 m @VGS = -2.7V Moisture Sensitivity: Level 1 per J-STD-020 125 m @VGS = -2.5V Terminals: Finish - Matte Tin anne
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050