P213 - описание и поиск аналогов

 0.1. Size:445K  sanyo
 atp213.pdf 

ATP213 Ordering number ENA1526A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ATP213 Applications Features Low ON-resistance Large current 4V drive Slim package Halogen free compliance Protection diode in Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-

 0.2. Size:87K  sanyo
 fp213.pdf 

Ordering number EN4724 FP213 PNP Epitaxial Planar Silicon Transistor Motor Driver Applications Features Package Dimensions Composite type with 2 PNP transistors facilitating unit mm high-density mounting. 2097A The FP213 is composed of 2 chips, each being [FP213] equivalent to the 2SB1397, placed in one package. Electrical Connection 1 Base 2 Collector 1 Base 3 Emitter C

 0.3. Size:110K  siemens
 bup213.pdf 

BUP 213 IGBT Preliminary data Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated Pin 1 Pin 2 Pin 3 G C E Type VCE IC Package Ordering Code BUP 213 1200V 32A TO-220 AB Q67040-A4407-A2 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage VCGR RGE = 20 k 1200 Gate-

 0.4. Size:160K  diodes
 dmp2130l.pdf 

DMP2130L P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Low RDS(ON) Case SOT-23 Case Material - Molded Plastic, Green Molding Compound. 75 m @VGS = -4.5V UL Flammability Rating 94V-0 110 m @VGS = -2.7V Moisture Sensitivity Level 1 per J-STD-020D 12

 0.5. Size:162K  diodes
 dmp2130ldm.pdf 

DMP2130LDM P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Low RDS(ON) Case SOT-26 Case Material Molded Plastic. UL Flammability Rating 94V-0 80 m @VGS = -4.5V Moisture Sensitivity Level 1 per J-STD-020D 110 m @VGS = -2.7V Terminals Finish - Matte Tin

 0.6. Size:270K  diodes
 dmp213dufa.pdf 

DMP213DUFA 25V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 0.4mm Ultra Low Profile Package for Thin Application ID V(BR)DSS RDS(ON) 0.48mm2 Package Footprint, 16 Times Smaller than SOT23 TA = +25 C 10 @ VGS = -4.5V -166mA Low VGS(th), Can be Driven Directly From a Battery -25V 13 @ VGS = -2.7V -138mA Low RDS(on) ESD Protected Gate

 0.7. Size:1054K  russia
 p213a p213b p214a p214b p214v p214g p215.pdf 

 0.8. Size:258K  aosemi
 aosp21321.pdf 

AOSP21321 30V P-Channel MOSFET General Description Product Summary VDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -11A High Current Capability RDS(ON) (at VGS=-10V)

 0.9. Size:375K  aosemi
 aosp21311c.pdf 

AOSP21311C 30V P-Channel MOSFET General Description Product Summary VDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -6.5A High Current Capability RDS(ON) (at VGS=-10V)

 0.10. Size:295K  aosemi
 aosp21357.pdf 

AOSP21357 30V P-Channel MOSFET General Description Product Summary VDS Latest advanced trench technology -30V Low RDS(ON) ID (at VGS=-10V) -16A High Current capability RDS(ON) (at VGS=-10V)

 0.11. Size:308K  aosemi
 aosp21307.pdf 

AOSP21307 30V P-Channel MOSFET General Description Product Summary VDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -14A High Current Capability RDS(ON) (at VGS=-10V)

 0.12. Size:358K  aosemi
 aosp21313c.pdf 

AOSP21313C 30V P-Channel MOSFET General Description Product Summary VDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -7A High Current Capability RDS(ON) (at VGS=-10V)

 0.13. Size:74K  tysemi
 dmp2130l.pdf 

Product specification DMP2130L P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low RDS(ON) Case SOT23 Case Material - Molded Plastic, Green Molding Compound. 75 m @VGS = -4.5V UL Flammability Rating 94V-0 110 m @VGS = -2.7V Moisture Sensitivity Level 1 per J-STD-020 125 m @VGS = -2.5V Terminals Finish - Matte Tin anne