P213 Datasheet, Equivalent, Cross Reference Search

ATP213Ordering number : ENA1526ASANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceATP213ApplicationsFeatures Low ON-resistance Large current 4V drive Slim package Halogen free compliance Protection diode inSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-

Ordering number:EN4724FP213PNP Epitaxial Planar Silicon TransistorMotor Driver ApplicationsFeatures Package Dimensions Composite type with 2 PNP transistors facilitatingunit:mmhigh-density mounting.2097A The FP213 is composed of 2 chips, each being[FP213]equivalent to the 2SB1397, placed in one package.Electrical Connection1:Base2:Collector1:Base3:Emitter C

BUP 213IGBTPreliminary data Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche ratedPin 1 Pin 2 Pin 3G C EType VCE IC Package Ordering CodeBUP 213 1200V 32A TO-220 AB Q67040-A4407-A2Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE = 20 k 1200Gate-

DMP2130LP-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low RDS(ON): Case: SOT-23 Case Material - Molded Plastic, Green Molding Compound. 75 m @VGS = -4.5V UL Flammability Rating 94V-0 110 m @VGS = -2.7V Moisture Sensitivity: Level 1 per J-STD-020D 12

DMP2130LDMP-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low RDS(ON): Case: SOT-26 Case Material Molded Plastic. UL Flammability Rating 94V-0 80 m @VGS = -4.5V Moisture Sensitivity: Level 1 per J-STD-020D 110 m @VGS = -2.7V Terminals: Finish - Matte Tin

DMP213DUFA25V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 0.4mm Ultra Low Profile Package for Thin Application ID V(BR)DSS RDS(ON) 0.48mm2 Package Footprint, 16 Times Smaller than SOT23 TA = +25C 10 @ VGS = -4.5V -166mA Low VGS(th), Can be Driven Directly From a Battery -25V 13 @ VGS = -2.7V -138mA Low RDS(on) ESD Protected Gate

AOSP2132130V P-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -11A High Current Capability RDS(ON) (at VGS=-10V)

AOSP2135730V P-Channel MOSFETGeneral Description Product SummaryVDS Latest advanced trench technology -30V Low RDS(ON) ID (at VGS=-10V) -16A High Current capability RDS(ON) (at VGS=-10V)

AOSP2130730V P-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -14A High Current Capability RDS(ON) (at VGS=-10V)

Product specificationDMP2130LP-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low RDS(ON): Case: SOT23 Case Material - Molded Plastic, Green Molding Compound. 75 m @VGS = -4.5V UL Flammability Rating 94V-0 110 m @VGS = -2.7V Moisture Sensitivity: Level 1 per J-STD-020 125 m @VGS = -2.5V Terminals: Finish - Matte Tin anne