ASDM30P30CTD-30V P-Channel MOSFETFeaturesProduct Summary Low RDS(ON) Fast switchingV -30 V DSS Green Device AvailableR 15 mDS(ON)-Typ.ApplicationI -30 A D MB / VGA / Vcore POL ApplicationsDFN3*3-8 P-MOSFETAbsolute Maximum Ratings (T =25C Unless Otherwise Noted)JSymbol Parameter Rating Unit VDSS Drain-Source Voltage -30 V VGSS Gate-

DMP3013SFV 30V P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (Type UX) Product Summary Features and Benefits ID max Low RDS(ON)Ensures On-State Losses are Minimized BVDSS RDS(ON) max TC = +25C Small form Factor Thermally Efficient Package Enables Higher Density End Products 9.5m @ VGS = -10V -35A -30V Occupies 33% of the Board Area Occupied by SO-8 En

DMP3010LPSQ GreenP-CHANNEL ENHANCEMENT MODE MOSFET PowerDI Product Summary Features ID Thermally Efficient Package Cooler Running Applications V(BR)DSS RDS(ON) TA = +25C High Conversion Efficiency 7.5m @ VGS = -10V -36A Low RDS(ON) Minimizes On-State Losses -30V 10m @ VGS = -4.5V -31A Low Input Capacitance Fast Switching Speed

NOT RECOMMENDED FOR NEW DESIGN USE DMP3013SFV DMP3017SFV 30V P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (Type UX) Product Summary Features and Benefits ID Max Low RDS(ON) ensures on-state losses are minimized BVDSS RDS(ON) Max TC = +25C Small form factor thermally efficient package enables higher density end products 10m @ VGS = -10V -40A -30V

ASDM30P30CTD-30V P-Channel MOSFETFeaturesProduct Summary Low RDS(ON) Fast switchingV -30 V DSS Green Device AvailableR 15 mDS(ON)-Typ.ApplicationI -30 A D MB / VGA / Vcore POL ApplicationsDFN3*3-8 P-MOSFETAbsolute Maximum Ratings (T =25C Unless Otherwise Noted)JSymbol Parameter Rating Unit VDSS Drain-Source Voltage -30 V VGSS Gate-

DMP3007SPS GreenP-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low RDS(ON) Minimizes On-State Losses ID Max BVDSS RDS(ON) Max Small Form Factor Thermally Efficient Package Enables Higher TC = +25C Density End Products 7m @ VGS = -10V -90A 100% Unclamped Inductive Switching Ensures More Reliability -30V ESD Pro

DP3080TO-252Datasheet of DP3080TO-25218033419374QQ2171689052Shenzhen Developer Microelectronics Co.,Ltd.707-710Address:Unit 7-10,7/F.,west block, Skyworth Semiconductor design Building,The 4th on High-tech Zone, Nanshan

DMP3013SFV 30V P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (Type UX) Product Summary Features and Benefits ID max Low RDS(ON) ensures on-state losses are minimized BVDSS RDS(ON) max TC = +25C Small form factor thermally efficient package enables higher density end products 9.5m @ VGS = -10V -35A -30V Occupies just 33% of the board area occupied b

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP30P06V/DDesigner's Data SheetMTP30P06VTMOS VMotorola Preferred DevicePower Field Effect TransistorPChannel EnhancementMode Silicon GateTMOS POWER FETTMOS V is a new technology designed to achieve an onresis-30 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTSnew

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby TP3034/DThe RF LineNPN SiliconTP3034RF Power TransistorThe TP3034 is designed for 960 MHz cellular radio base stations in bothanalog and digital applications. It incoporates high value emitter ballastresistors, gold metallizations and offers a high degree of reliability andruggedness. Specified 24 Volts, 960 MH

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby TP3061/DThe RF LineUHF Power TransistorTP3061The TP3061 is designed for 960 MHz mobile base stations in both analog anddigital applications. It incorporates high value emitter ballast resistors, goldmetallizations and offers a high degree of reliability and ruggedness. Includingdouble input and output matching network

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP3055VL/DDesigner's Data SheetMTP3055VLTMOS VMotorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETTMOS V is a new technology designed to achieve an onresis-12 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTS

MOTOROLAOrder this document SEMICONDUCTOR TECHNICAL DATAby MTP30N06VL/DDesigner's Data SheetMTP30N06VLTMOS VMotorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FET TMOS V is a new technology designed to achieve an onresis-30 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTS

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby TP3069/DThe RF LineRF Power TransistorTP3069The TP3069 is designed for cellular radio base station amplifiers up to 960MHz. It incorporates high value emitter ballast resistors, gold metallizations andoffers a high degree of reliability and ruggedness. The TP3069 also featuresinput and output matching networks and hig

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby TP3024B/DThe RF LineUHF Linear Power TransistorTP3024BThe TP3024B is a balanced transistor designed specifically for use in cellularradio systems. This device permits the design of a Class AB pushpull, highgain, broadband amplifier having a high degree of linearity without the need forcomplicated biasing circuitry.

TP3020A PCB24

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby TP3005/DThe RF LineUHF Power TransistorTP3005The TP3005 is designed for 960 MHz base stations in both analog and digitalapplications. It incorporates high value emitter ballast resistors, gold metalliza-tions and offers a high degree of reliability and ruggedness. Specified 26 Volts, 960 MHz CharacteristicsOutput

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby TP3021/DThe RF LineUHF Power TransistorTP3021The TP3021 is designed for 24 V common emitter base station amplifiers.Operating in the 820960 MHz bandwidth, it has been specifically designed foruse in analog and digital (GSM) systems as a medium power output device. Specified 24 Volts, 960 MHz CharacteristicsOut

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP3055VL/DDesigner's Data SheetMTP3055VLTMOS VMotorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETTMOS V is a new technology designed to achieve an onresis-12 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTS

Order this documentMOTOROLAby TIP3055/DSEMICONDUCTOR TECHNICAL DATANPNTIP3055Complementary Silicon PowerPNPTIP2955Transistors. . . designed for generalpurpose switching and amplifier applications. DC Current Gain hFE = 2070 @ IC = 4.0 Adc15 AMPERE CollectorEmitter Saturation Voltage VCE(sat) = 1.1 Vdc (Max) @ IC = 4.0 Adc

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby TP3006/DThe RF LineNPN SiliconTP3006RF Power TransistorThe TP3006 is designed for cellular radio base station amplifiers up to 960MHz. It incorporates high value emitter ballast resistors, gold metallizations andoffers a high degree of reliability and ruggedness. The TP3006 also featuresinput and output matching net

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby TP3008/DThe RF LineRF Power TransistorTP3008The TP3008 is designed for 960 MHz cellular radio base stations in bothanalog and digital applications. It incorporates high value emitter ballastresistors, gold metallizations and offers a high degree of reliability andruggedness. Specified 24 Volts, 960 MHz Characteri

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby TP3022B/DThe RF LineUHF Power TransistorTP3022BThe TP3022B is designed for commonemitter operation in the 900 MHzmobile radio band. Use of gold metallization and silicon diffused ballastresistors results in a medium power output/driver transistor with stateoftheart ruggedness and reliability. Specifie

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby TP3007S/DThe RF LineNPN SiliconTP3007SRF Power TransistorThe TP3007S is designed for 24 volts common emitter base stationamplifiers, operating up to 1 GHz bandwidth. It has been specifically designedfor use in analog and digital Global System Mobile (GSM) systems. Thestudless package offers a possibility for surface

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP3055V/DDesigner's Data SheetMTP3055VTMOS VMotorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETTMOS V is a new technology designed to achieve an onresis- 12 AMPEREStance area product about onehalf that of standard MOSFETs. This 60 VOLTS

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP3055V/DDesigner's Data SheetMTP3055VTMOS VMotorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETTMOS V is a new technology designed to achieve an onresis- 12 AMPEREStance area product about onehalf that of standard MOSFETs. This 60 VOLTS

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby TP3032/DThe RF LineNPN SiliconTP3032RF Power TransistorThe TP3032 is designed for 26 volts, common emitter, 960 MHz base stationamplifiers, for use in analog and digital systems. Specified 26 Volts, 960 MHz CharacteristicsOutput Power 21 WattsGain 7.5 dB min21 W, 960 MHzRF POWER TRANSISTOR Sili

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP30P06V/DDesigner's Data SheetMTP30P06VTMOS VMotorola Preferred DevicePower Field Effect TransistorPChannel EnhancementMode Silicon GateTMOS POWER FETTMOS V is a new technology designed to achieve an onresis-30 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTSnew

PD - 97126IRFP3077PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyDVDSS75Vl High Speed Power SwitchingRDS(on) typ.2.8m:l Hard Switched and High Frequency Circuitsmax. 3.3m:BenefitsGl Worldwide Best RDS(on) in TO-247ID (Silicon Limited)200A cl Improved Gate, Avalanche and Dynamic dV/d

IRFP3006PbF VDSS 60V DRDS(on) typ. 2.1m max. 2.5m S GD 270A ID (Silicon Limited) G ID (Package Limited) 195A STO-247AC Applications G D S High Efficiency Synchronous Rectification in SMPS Gate Drain Source Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Benefits Improved

PD - 94388BIRGP30B60KD-EINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEFeaturesC VCES = 600V Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. 10s Short Circuit Capability.IC = 30A, TC=100C Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.Gtsc > 10s, TJ=150C Positive VCE (on) Temperature Coeffici

PD- 93818AIRGP30B120KD-EINSULATED GATE BIPOLAR TRANSISTOR WITH Motor Control Co-Pack IGBTULTRAFAST SOFT RECOVERY DIODECFeaturesVCES = 1200V Low VCE(on) Non Punch Through (NPT)Technology Low Diode VF (1.76V Typical @ 25A & 25C)VCE(on) typ. = 2.28V 10 s Short Circuit Capability G Square RBSOAVGE = 15V, IC = 25A, 25C Ultrasoft Diode Recovery Ch

PD - 96230IRLP3034PbFHEXFET Power MOSFETApplicationsDl DC Motor DriveVDSS 40Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.1.4ml Uninterruptible Power Supply max. 1.7ml High Speed Power SwitchingGID (Silicon Limited) 327Al Hard Switched and High Frequency CircuitsSID (Package Limited) 195ABenefitsl Optimized for Logic Level Drive D

PHP30NQ15T; PHB30NQ15TN-channel enhancement mode field-effect transistorRev. 02 12 March 2001 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS1 technology.Product availability:PHP30NQ15T in SOT78 (TO-220AB)PHB30NQ15T in SOT404 (D2-PAK).2. Features Fast switching Low on-state resistance.

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP3055E, PHD3055EFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 55 V Fast switchingID = 10.3 AgRDS(ON) 150 m (VGS = 10 V)sGENERAL DESCRIPTIONN-channel enhancement mode, field-effect power transistor in a plastic envelope using tr

PHP/PHD3055ETrenchMOS standard level FETRev. 06 25 March 2002 Product data1. DescriptionN-channel standard level field-effect power transistor in a plastic package usingTrenchMOS1 technology.Product availability:PHP3055E in SOT78 (TO-220AB)PHD3055E in SOT428 (D-PAK).2. Features Fast switching Low on-state resistance.3. Applications DC to DC converters Switc

Philips Semiconductors Product specification PowerMOS transistor PHP3055L Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope featuring high VDS Drain-source voltage 60 Vavalanche energy capability, stable ID Drain current (DC) 12 Ablocking voltage, fast switch

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP30NQ15T, PHB30NQ15T FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 150 V Fast switching Low thermal resistance ID = 29 AgRDS(ON) 63 msGENERAL DESCRIPTIONN-channel enhancement mode field-effect power transistor in a plastic

DISCRETE SEMICONDUCTORSDATA SHEETBSP304; BSP304AP-channel enhancement modevertical D-MOS transistors1995 Apr 07Product specificationFile under Discrete Semiconductors, SC07Philips SemiconductorsPhilips Semiconductors Product specificationP-channel enhancement modeBSP304; BSP304Avertical D-MOS transistorsFEATURES DESCRIPTION Direct interface to C-MOS, TTL etc. P-c

DISCRETE SEMICONDUCTORSDATA SHEETBSP304; BSP304AP-channel enhancement modevertical D-MOS transistors1995 Apr 07Product specificationFile under Discrete Semiconductors, SC07Philips SemiconductorsPhilips Semiconductors Product specificationP-channel enhancement modeBSP304; BSP304Avertical D-MOS transistorsFEATURES DESCRIPTION Direct interface to C-MOS, TTL etc. P-c

Philips Semiconductors Product specification PowerMOS transistor PHP3055E GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope featuring high VDS Drain-source voltage 60 Vavalanche energy capability, stable ID Drain current (DC) 12 Ablocking voltage, fast switching and Ptot Total power dissi

Philips Semiconductors Preliminary specification TrenchMOS transistor PHP3055E, PHB3055E, PHD3055EFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 55 V Fast switching High thermal cycling performance ID = 10.5 A Low thermal resistancegRDS(ON) 150 m (VGS = 10 V)sGENERAL DESCRIPTIONN-channel enhance

STP30NE06STP30NE06FPN - CHANNEL 60V - 0.042 - 30A - TO-220/TO-220FPSTripFET POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTP30NE06 60 V

STP3020LN - CHANNEL 30V - 0.019 - 40A - TO-220STripFET POWER MOSFETTYPE VDSS RDS(on) IDSTP3020L 30 V

STGF30NC60SSTGP30NC60S, STGWF30NC60S30 A, 600 V, fast IGBTFeaturesTAB Optimized performance for medium operating frequencies up to 5 kHz in hard switching Low on-voltage drop (VCE(sat))332 High current capability 211TO-220 TO-220FPApplication1113Motor drive21TO-3PFDescriptionThis device utilizes the advanced PowerMESHTM process result

TIP2955TIP3055Complementary power transistorsFeatures Low collector-emitter saturation voltage Complementary NPN - PNP transistorsApplications General purpose Audio Amplifier321DescriptionTO-247The devices are manufactured in epitaxial-base planar technology and are suitable for audio, power linear and switching applications.Figure 1. Internal sche

STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DFTrench gate field-stop IGBT, V series 600 V, 30 A very high speedDatasheet - production dataTABFeaturesTAB Maximum junction temperature: TJ = 175 C Tail-less switching off3 321 VCE(sat) = 1.85 V (typ.) @ IC = 30 A1DPAK TO-220 Tight parameters distributionTAB Safe paralleling Low therma

STP30NS15LFPN-channel 150V - 0.085 - 10A - TO-220FPMESH OVERLAY II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTP30NS15LFP 150V

STGB30NC60KSTGP30NC60K30 A - 600 V - short circuit rugged IGBTFeatures Low on-voltage drop (VCE(sat)) Low Cres / Cies ratio (no cross conduction susceptibility) Short circuit withstand time 10 s3 32Applications 11DPAKTO-220 High frequency inverters Motor driversDescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an

STP30NM30NN-channel 300V - 0.078 - 30A - TO-220Ultra low gate charge MDmesh II Power MOSFETFeaturesType VDSS RDS(on) IDSTP30NM30N 300V

TIP29A/29CTIP30A/30CCOMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERREDSALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The TIP29A and TIP29C are siliconEpitaxial-Base NPN power transistors mounted inJedec TO-220 plastic package. They are intentedfor use in medium power linear and switching32applications.1The complementary PNP types ar

STGB30H60DF STGP30H60DF600 V, 30 A high speed trench gate field-stop IGBTDatasheet - preliminary dataFeatures High speed switching Tight parameters distribution Safe paralleling Low thermal resistance 6 s short-circuit withstand time 3 3211 Ultrafast soft recovery antiparallel diodeTO-220Applications DPAK Motor controlDescriptionFig

STP30NE06LSTP30NE06LFPN - CHANNEL 60V - 0.035 - 30A - TO-220/TO-220FPSTripFET POWER MOSFETTYPE VDSS RDS(on) IDSTP30NE06L 60 V

STB30NF10STP30NF10 - STP30NF10FPN-channel 100V - 0.038 - 35A - D2PAK/TO-220/TO-220FPLow gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB30NF10 100V

STB30NM60N,STI30NM60N,STF30NM60NSTP30NM60N, STW30NM60NN-channel 600 V, 0.1 , 25 A, MDmesh II Power MOSFETTO-220, TO-220FP, TO-247, D2PAK, I2PAKFeaturesRDS(on) VDSS @ Type ID PWTJmaxmax33121STB30NM60N 650 V

STB300NH02LSTP300NH02LN-channel 24V - 120A - TO-220 / D2PAKSTripFET Power MOSFETPreliminary DataFeaturesType VDSS RDS(on) Max IDSTB300NH02L 24V

STP30NF20STW30NF20N-channel 200V - 0.065 - 30A - TO-220/TO-247Low gate charge STripFET Power MOSFETGeneral featuresType VDSS RDS(on) ID PTOTSTP30NF20 200V 0.075 30A 125WSTW30NF20 200V 0.075 30A 125W Gate charge minimized 3 32 21 1 100% avalanche testedTO-220TO-247 Excellent figure of merit (RDS*Qg) Very good manufactuing repeability Ver

STP30N05STP30N05FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP30N05 50 V

STP30NE06LSTP30NE06LFPN - CHANNEL 60V - 0.035 - 30A - TO-220/TO-220FPSTripFET POWER MOSFETTYPE VDSS RDS(on) IDSTP30NE06L 60 V

STP30NF20 - STB30NF20STW30NF20N-channel 200V - 0.065 - 30A - TO-220/TO-247/D2PAKLow gate charge STripFET Power MOSFETFeaturesType VDSS RDS(on) ID PTOTSTP30NF20 200V 0.075 30A 125WSTW30NF20 200V 0.075 30A 125W3322STB30NF20 200V 0.075 30A 125W11TO-2473 Gate charge minimized TO-2201 100% avalanche testedDPAK Excellent figure of me

STB30NF10STP30NF10 - STP30NF10FPN-channel 100V - 0.038 - 35A - D2PAK/TO-220/TO-220FPLow gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB30NF10 100V

BSP30/31BSP32/33MEDIUM POWER AMPLIFIERADVANCE DATA SILICON EPITAXIAL PLANAR PNPTRANSISTORS MINIATURE PLASTIC PACKAGE FORAPPLICATION IN SURFACE MOUNTINGCIRCUITS GENERAL PURPOSE MAINLY INTENDED2FOR USE IN MEDIUM POWER INDUSTRIALAPPLICATION AND FOR AUDIO AMPLIFIER3OUTPUT STAGE2 NPN COMPLEMENTS ARE BSP40, BSP41,1BSP42 AND BSP43 RESPECTIVELYSOT-223INTERNAL SCH

STGF30NC60SSTGP30NC60S, STGWF30NC60S30 A, 600 V, fast IGBTFeaturesTAB Optimized performance for medium operating frequencies up to 5 kHz in hard switching Low on-voltage drop (VCE(sat))332 High current capability 211TO-220 TO-220FPApplication1113Motor drive21TO-3PFDescriptionThis device utilizes the advanced PowerMESH process resul

STP30N06STP30N06FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP30N06 60 V

STB30NM50N,STI30NM50N,STF30NM50NSTP30NM50N, STW30NM50NN-channel 500 V, 0.090 , 27 A MDmesh II Power MOSFETD2PAK, I2PAK, TO-220FP, TO-220, TO-247FeaturesRDS(on) VDSS Type ID(@Tjmax)max33121STB30NM50N 550 V

STGP30M65DF2 Trench gate field-stop IGBT, M series 650 V, 30 A low-loss in a TO-220 package Datasheet - production data Features 6 s of minimum short-circuit withstand time V = 1.55 V (typ.) @ I = 30 A CE(sat) CTAB Tight parameters distribution Safer paralleling Low thermal resistance Soft and very fast recovery antiparallel diode 321Appl

STGB30H60DF, STGF30H60DF,STGP30H60DF, STGW30H60DF600 V, 30 A high speed trench gate field-stop IGBTDatasheet - production dataFeaturesTAB High speed switching Tight parameters distribution313 Safe paralleling21DPAK Low thermal resistanceTO-220FP Short circuit ratedTAB Ultrafast soft recovery antiparallel diodeApplications3 3 I

STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DFTrench gate field-stop IGBT, V series 600 V, 30 A very high speedDatasheet - production dataTABFeaturesTAB Maximum junction temperature: TJ = 175 C Tail-less switching off3 321 VCE(sat) = 1.85 V (typ.) @ IC = 30 A1DPAK TO-220 Tight parameters distributionTAB Safe paralleling Low therma

STB30N65M5, STF30N65M5, STI30N65M5STP30N65M5, STW30N65M5N-channel 650 V, 0.125 , 22 A, MDmesh V Power MOSFETD2PAK, I2PAK, TO-220FP, TO-220, TO-247FeaturesVDSS @ Type RDS(on) max IDTJMAX 33123 12STB30N65M5 710 V

STB300NH02LSTP300NH02LN-channel 24V - 120A - TO-220 / D2PAKSTripFET Power MOSFETPreliminary DataFeaturesType VDSS RDS(on) Max IDSTB300NH02L 24V

STGB30H60DFB, STGP30H60DFBDatasheetTrench gate field-stop 600 V, 30 A high speed HB series IGBTFeatures Maximum junction temperature: TJ = 175 CTABTAB High speed switching series Minimized tail current3 Low saturation voltage: VCE(sat) = 1.55 V (typ.) @ IC = 30 A132D PAK TO-220 2 Tight parameter distribution1 Safe paralleling Positive V

STP30NE06STP30NE06FPN - CHANNEL 60V - 0.042 - 30A - TO-220/TO-220FPSTripFET POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTP30NE06 60 V

STB30NM60N,STI30NM60N,STF30NM60NSTP30NM60N, STW30NM60NN-channel 600 V, 0.1 , 25 A, MDmesh II Power MOSFETTO-220, TO-220FP, TO-247, D2PAK, I2PAKFeaturesRDS(on) VDSS @ Type ID PWTJmaxmax33121STB30NM60N 650 V

STx30NM60NDN-channel 600 V, 0.11 , 25 A FDmesh II Power MOSFET(with fast diode) TO-220, TO-220FP, D2PAK, I2PAK, TO-247FeaturesVDSS @TJ RDS(on) Type IDmax max3322 2STB30NM60ND 25 AI PAK11TO-247STI30NM60ND 25 ASTF30NM60ND 650 V 0.13 25 A(1)3STP30NM60ND 25 A12D PAKSTW30NM60ND 25 A1. Limited only by maximum temperature allowed32 3 T

STx30NM60NDN-channel 600 V, 0.11 , 25 A FDmesh II Power MOSFET(with fast diode) TO-220, TO-220FP, D2PAK, I2PAK, TO-247FeaturesVDSS @TJ RDS(on) Type IDmax max3322 2STB30NM60ND 25 AI PAK11TO-247STI30NM60ND 25 ASTF30NM60ND 650 V 0.13 25 A(1)3STP30NM60ND 25 A12D PAKSTW30NM60ND 25 A1. Limited only by maximum temperature allowed32 3 T

STGP30H65FTrench gate field-stop IGBT, H series 650 V, 30 A high speedDatasheet - production dataFeatures High speed switching Tight parameters distributionTAB Safe paralleling Low thermal resistance Short-circuit rated321ApplicationsTO-220 Inverter UPS PFCDescriptionFigure 1. Internal schematic diagramThis device is an IGBT deve

STP30NF20 - STB30NF20STW30NF20N-channel 200V - 0.065 - 30A - TO-220/TO-247/D2PAKLow gate charge STripFET Power MOSFETFeaturesType VDSS RDS(on) ID PTOTSTP30NF20 200V 0.075 30A 125WSTW30NF20 200V 0.075 30A 125W3322STB30NF20 200V 0.075 30A 125W11TO-2473 Gate charge minimized TO-2201 100% avalanche testedDPAK Excellent figure of me

STGB30V60F, STGP30V60FTrench gate field-stop IGBT, V series 600 V, 30 A very high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 CTAB Tail-less switching offTAB VCE(sat) = 1.85 V (typ.) @ IC = 30 A Tight parameters distribution Safe paralleling33121 Low thermal resistanceD2PAKTO-220Applications Ph

MTP3055EN-CHANNEL 60V - 0.1 - 12ATO-220STripFET POWER MOSFETTYPE VDSS RDS(on) IDMTP3055E 60 V

Ordering number:EN4726FP302TR:NPN Epitaxial Planar Silicon TransistorSBD:Schottky Barrier DiodeDC-DC Converter ApplicationsFeatures Package Dimensions Composite type with NPN transistor and Schottokyunit:mmbarrier diode facilitating high-density mounting.2099A The FP302 is composed of chips equivalent to the[FP302]2SC4520 and SB05-05CP, which are placed in onepac

Ordering number:EN4539FP301TR:NPN Epitaxial Planar Silicon TransistorSBD:Schottky Barrier DiodeDC-DC Converter ApplicationsFeatures Package Dimensions Composite type with 2 devices (NPN transistor andunit:mmSchottoky barrier diode) contained in one package,2099Afacilitating high-density mounting.[FP301] The FP301 is formed with a chip being equivalent tothe 2SD16

ATP301Ordering number : ENA1457ASANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceATP301ApplicationsFeatures ON-resistance RDS(on)=57m (typ.) Input capacitance Ciss=4000pF (typ.) 10V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-

Ordering number:ENN4926TR:NPN Epitaxial Planar Silicon TransistorSBD:Schottky Barrier DiodeFP304DC-DC ConverterFeatures Package Dimensions Complex type with an NPN transistor and aunit:mmSchottoky barrier diode facilitating high-density2099Amounting.[FP304] The FP304 is composed of 2 chips, one being4.5equivalent to the 2SD1620 and the other the SB07- 3.42.8

SMP3003Ordering number : ENA1655BSANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceSMP3003ApplicationsFeatures ON-resistance RDS(on)1=6.2m (typ.) Input capacitance Ciss=13400pF (typ.) 4V driveSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --75

ATP302Ordering number : ENA1654ASANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceATP302ApplicationsFeatures ON-resistance RDS(on)1=10m (typ.) Input capacitance Ciss=5400pF (typ.) 4.5V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrai

Ordering number:ENN4657TR:NPN Epitaxial Planar Silicon TransistorSBD:Schottky Barrier DiodeFP303DC-DC Converter ApplicationsFeatures Package Dimensions Composite type with NPN transistor and Schottokyunit:mmbarrier diode facilitates high-density mounting.2099A The FP303 is composed of chips equivalent to the[FP303]2SD1623 and SB05-05CP, which are placed in one4.5

SMP3003Ordering number : ENA1655ASANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceSMP3003ApplicationsFeatures ON-resistance RDS(on)1=6.2m (typ.) Input capacitance Ciss=13400pF 4V driveSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --75 VGat

Preliminary Datasheet RJP30K3DPP-M0 R07DS0501EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching Jul 05, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage VCE(sat) = 1.1V typ High speed switching tr = 90 ns typ, tf = 250 ns typ Low leak current ICES = 1 A max Isolated package

Preliminary Datasheet RJP30H1DPD R07DS0465EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) High speed switching: tr = 80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ. Low leak current: ICES = 1 A max. Outline RENES

Preliminary Datasheet RJP30K3DPP-M0 R07DS0501EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching Jul 05, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage VCE(sat) = 1.1V typ High speed switching tr = 90 ns typ, tf = 250 ns typ Low leak current ICES = 1 A max Isolated package

Preliminary Datasheet RJP30H2DPK-M0 R07DS0467EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tf = 100 ns typ, tf = 180 ns typ Low leak current: ICES = 1 A max Outline RENES

Preliminary Datasheet RJP30E3DPP-M0 R07DS0353EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Apr 15, 2011Features Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL Outline RENESAS Pack

Data Sheet NP30N04QUK R07DS1227EJ010040 V 30 A Dual N-channel Power MOS FET Rev.1.00Application: Automotive Nov 18, 2014Description NP30N04QUK is a dual N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 8 m MAX. (VGS = 10 V, ID = 15 A) Low Ciss: Ciss = 1600 pF TYP.

Preliminary Datasheet RJP30H1DPP-M0 R07DS0466EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) High speed switching: tr =80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. Low leak current: ICES = 1 A max. Isolated p

Preliminary Datasheet RJP30H1DPD R07DS0465EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) High speed switching: tr = 80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ. Low leak current: ICES = 1 A max. Outline RENES

Preliminary Datasheet RJP30E3DPP-M0 R07DS0353EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Apr 15, 2011Features Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL Outline RENESAS Pack

Preliminary Datasheet RJP30H1DPP-M0 R07DS0466EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) High speed switching: tr =80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. Low leak current: ICES = 1 A max. Isolated p

Preliminary Datasheet RJP30H2DPK-M0 / RJP30H2A R07DS0467EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tf = 100 ns typ, tf = 180 ns typ Low leak current: ICES = 1 A maxOutline

Preliminary Datasheet RJP30H2DPK-M0 R07DS0467EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tf = 100 ns typ, tf = 180 ns typ Low leak current: ICES = 1 A max Outline RENES

Preliminary Datasheet RJP30E2DPP-M0 R07DS0347EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Apr 12, 2011Features Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL Outline RENESAS Pack

Preliminary Datasheet RJP30E2DPP-M0 R07DS0347EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Apr 12, 2011Features Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL Outline RENESAS Pack

Preliminary Datasheet RJP30E2DPP-M0 R07DS0347EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Apr 12, 2011Features Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL Outline RENESAS Pack

RFD3055LE, RFD3055LESM, RFP3055LEData Sheet January 200211A, 60V, 0.107 Ohm, Logic Level, FeaturesN-Channel Power MOSFETs 11A, 60VThese N-Channel enhancement-mode power MOSFETs are rDS(ON) = 0.107manufactured using the latest manufacturing process Temperature Compensating PSPICE Modeltechnology. This process, which uses feature sizes approaching those of LSI

May 2001TMQFETFQP30N06L60V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 32A, 60V, RDS(on) = 0.035 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC)planar stripe, DMOS technology. Low Crss ( typical 50 pF)This advanced technology has been especially tailo

RFP30N06LE, RF1S30N06LESMData Sheet January 200430A, 60V, ESD Rated, 0.047 Ohm, Logic FeaturesLevel N-Channel Power MOSFETs 30A, 60VThese are N-Channel power MOSFETs manufactured using rDS(ON) = 0.047the MegaFET process. This process, which uses feature 2kV ESD Protectedsizes approaching those of LSI integrated circuits gives optimum utilization of silicon, res

RFG30P05, RFP30P05, RF1S30P05SMData Sheet January 200230A, 50V, 0.065 Ohm, P-Channel Power FeaturesMOSFETs 30A, 50VThese are P-Channel power MOSFETs manufactured rDS(ON) = 0.065using the MegaFET process. This process, which uses Temperature Compensating PSPICE Modelfeature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resultin

July 2008TIP30/TIP30A/TIP30B/TIP30CPNP Epitaxial Silicon TransistorFeatures Complementary to TIP29/TIP29A/TIP29B/TIP29C1. Base 2. Collector 3. EmitterAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage : TIP30 - 40 V : TIP30A - 60 V : TIP30B - 80 V : TIP30C - 100 V VCEO Collector-Emitter Voltage : TIP30 - 40

June 2000DISTRIBUTION GROUP*MTP3055VLN-Channel Logic Level Enhancement Mode Field Effect TransistorFeaturesGeneral Description 12 A, 60 V. RDS(ON) = 0.18 @ VGS = 5 VThis N-Channel Logic Level MOSFET has been designedspecifically for low voltage, high speed switching Critical DC electrical parameters specified at elevatedapplications i.e. power supplies and power mo

TMQFETFQP30N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 30A, 60V, RDS(on) = 0.04 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC)planar stripe, DMOS technology. Low Crss ( typical 40 pF)This advanced technology has been especially tailored to Fast s

RFG30P06, RFP30P06, RF1S30P06SMData Sheet January 200230A, 60V, 0.065 Ohm, P-Channel Power FeaturesMOSFETs 30A, 60VThese are P-Channel power MOSFETs manufactured using rDS(ON) = 0.065the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI circuits, gives optimum utilization of silicon, resultin

TIP30 SERIES(TIP30/30A/30B/30C) PNP EPITAXIAL SILICON TRANSISTORMEDIUM POWER LINEARTO-220SWITCHING APPLICATIONS Complement to TIP29/29A/29B/29CABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector Emitter Voltage : TIP30 VCBO - 40 V : TIP30A - 60 V : TIP30B - 80 V : TIP30C - 100 V Collector Emitter Voltage : TIP30 VCEO - 40 V : TIP30A - 60 V : TIP30B

BSP 300SIPMOS Small-Signal Transistor N channel Enhancement mode Avalanche rated VGS(th)= 2.0... 4.0 VPin 1 Pin 2 Pin 3 Pin 4G D S DType VDS ID RDS(on) Package MarkingBSP 300 800 V 0.19 A 20 SOT-223 BSP 300Type Ordering Code Tape and Reel InformationBSP 300 Q67050 -T0009 E6433BSP 300 Q67050-T0017 E6327Maximum RatingsParameter Symbol Values UnitCo

BUP 304IGBTPreliminary data Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche ratedPin 1 Pin 2 Pin 3G C EType VCE IC Package Ordering CodeBUP 304 1000V 35A TO-218 AB Q67078-A4200-A2Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1000 VCollector-gate voltage VCGRRGE = 20 k 1000Gate-

BUP 306DIGBT With Antiparallel DiodePreliminary data Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diodePin 1 Pin 2 Pin 3G C EType VCE IC Package Ordering CodeBUP 306D 1200V 23A TO-218 AB Q67040-A4222-A2Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-ga

BUP 305 DIGBT With Antiparallel DiodePreliminary data Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diodePin 1 Pin 2 Pin 3G C EType VCE IC Package Ordering CodeBUP 305 D 1200V 12A TO-218 AB Q67040-A4225-A2Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-

BUP 302IGBTPreliminary data Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche ratedPin 1 Pin 2 Pin 3G C EType VCE IC Package Ordering CodeBUP 302 1000V 12A TO-218 AB Q67078-A4205-A2Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1000 VCollector-gate voltage VCGRRGE = 20 k 1000Gate-

BUP 307IGBTPreliminary data Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche ratedPin 1 Pin 2 Pin 3G C EType VCE IC Package Ordering CodeBUP 307 1200V 35A TO-218 AB Q67078-A4201-A2Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE = 20 k 1200Gate-

BUP 309IGBTPreliminary data High switching speed Low tail current Latch-up free Avalanche rated Low forward voltage dropRemark: The TO-218 AB case doesn't solve thestandards VDE 0110 and UL 508 for creeping distancePin 1 Pin 2 Pin 3G C EType VCE IC Package Ordering CodeBUP 309 1700V 25A TO-218 AB Q67078-A4204-A2Maximum RatingsParameter Symbol Values

BUP 300IGBTPreliminary data Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche ratedPin 1 Pin 2 Pin 3G C EType VCE IC Package Ordering CodeBUP 300 1200V 3.6A TO-218 AB Q67078-A4203-A2Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE = 20 k 1200Gate

BYP 303FRED Diode Fast recovery epitaxial diode Soft recovery characteristicsType VRRM IFRMS trr Package Ordering CodeBYP 303 1200V 65A 140ns TO-218 AD C67047-A2253-A2Maximum RatingsParameter Symbol Values UnitMean forward current IFAV ATC = 90 C, D = 0.5 40RMS forward current IFRMS 65Surge forward current, sine halfwave, aperiodic IFSMTj = 100 C, f = 50 Hz 170

BYP 302FRED Diode Fast recovery epitaxial diode Soft recovery characteristicsType VRRM IFRMS trr Package Ordering CodeBYP 302 1200V 40A 130ns TO-218 AD C67047-A2252-A2Maximum RatingsParameter Symbol Values UnitMean forward current IFAV ATC = 90 C, D = 0.5 25RMS forward current IFRMS 40Surge forward current, sine halfwave, aperiodic IFSMTj = 100 C, f = 50 Hz 115

BUP 307DIGBT With Antiparallel DiodePreliminary data Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diodePin 1 Pin 2 Pin 3G C EType VCE IC Package Ordering CodeBUP 307D 1200V 35A TO-218 AB Q67040-A4221-A2Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-ga

BUP 303IGBTPreliminary data Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche ratedPin 1 Pin 2 Pin 3G C EType VCE IC Package Ordering CodeBUP 303 1000V 23A TO-218 AB Q67078-A4202-A2Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1000 VCollector-gate voltage VCGRRGE = 20 k 1000Gate-

BYP 301FRED Diode Fast recovery epitaxial diode Soft recovery characteristicsType VRRM IFRMS trr Package Ordering CodeBYP 301 1200V 20A 80ns TO-218 AD C67047-A2251-A2Maximum RatingsParameter Symbol Values UnitMean forward current IFAV ATC = 90 C, D = 0.5 12RMS forward current IFRMS 20Surge forward current, sine halfwave, aperiodic IFSMTj = 100 C, f = 50 Hz 50

BYP 300Preliminary dataFRED Diode Fast recovery epitaxial diode Soft recovery characteristicsType VRRM IFRMS trr Package Ordering CodeBYP 300 1200V 6.5A 55ns TO-218 AD C67047-A2250-A2Maximum RatingsParameter Symbol Values UnitMean forward current IFAV ATC = 90 C, D = 0.5 4RMS forward current IFRMS 6.5Surge forward current, sine halfwave, aperiodic IFSMTj = 100

SiHP30N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low Input Capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.125 Reduced Switching and Conduction LossesQg max. (nC) 130 Ultra Low Gate Charge (Qg)Qgs (nC) 15 Avalanche Energy Rated (UIS)Qgd (nC) 39

VS-GP300TD60Swww.vishay.comVishay SemiconductorsDual INT-A-PAK Low Profile Half Bridge (Trench PT IGBT), 300 AProprietary Vishay IGBT Silicon L SeriesFEATURES Trench PT IGBT technology Low VCE(on) Square RBSOA HEXFRED antiparallel diode with ultrasoft reverse recovery characteristics Industry standard package Al2O3 DBC UL pending

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DMP3028LK3 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID 100% Unclamped Inductive Switch (UIS) Test In Production V(BR)DSS RDS(on) TC = +25C Low On-Resistance Fast Switching Speed 25m @ VGS = -10V -27A -30V Totally Lead-Free & Fully RoHS Compliant (Note 1 & 2) 38m @ VGS = -4.5V -22A Halogen and Antimony Free. Green Devi

DMP3037LSSP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-ResistanceIDV(BR)DSS RDS(on) max Low Input Capacitance TC = +25C Fast Switching Speed 32m @ VGS = -10V -5.8A -30V Low Input/Output Leakage 50m @ VGS = -4.5V -4.6A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Devi

DMP3015LSSSINGLE P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOP-8L 11m @ VGS = -10V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 17m @ VGS = -4.5V Moisture Sensitivity: Level 1 per J-STD-020D

DMP3030SNP-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case: SC-59 Low Gate Threshold Voltage Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture sensitivity: Level 1 per J-STD-020C Fast Switching Speed Lead Free By

DMP3017SFGQ 30V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits ID Max Low RDS(ON) Ensures On-State Losses Are Minimized V(BR)DSS RDS(ON) Max TA = +25C Small form factor thermally efficient package enables higher density end products 10m @ VGS = -10V -11.5A -30V Occupies just 33% of the board area occupied by SO-8 enab

DMP3012LPSP-CHANNEL ENHANCEMENT MODE MOSFET POWERDI5060-8 Product Summary Features and Benefits Thermally Efficient Package-Cooler Running Applications ID V(BR)DSS RDS(ON) TC = +25C High Conversion Efficiency Low Minimizes On State Losses 9m @ VGS = -10V -45A RDS(ON)-30V Low Input Capacitance 12m @ VGS = -4.5V -35A Fast Switching Speed

DMP3010LPSP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Thermally Efficient Package-Cooler Running Applications ID High Conversion EfficiencyV(BR)DSS RDS(ON) TA = 25C (Note 5) Low Minimizes On State Losses RDS(on) Low Input Capacitance 7.5m @ VGS = -10V -36A Fast Switching Speed -30V

DMP3085LSDP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-ResistanceV(BR)DSS RDS(ON) MAX Package TA = +25C Low Input Capacitance 70m @VGS = -10V -3.9A Fast Switching Speed -30V SO-8 95m @VGS = -4.5V -3.3A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qua

DMP3010LPSQ GreenP-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Thermally Efficient Package - Cooler Running Applications V(BR)DSS RDS(ON) TA = +25C High Conversion Efficiency 7.5m @ VGS = -10V -36A Low RDS(ON) Minimizes On State Losses -30V 10m @ VGS = -4.5V -31A Low Input Capacitance Fast Switching Speed

DMP3036SSD P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-Resistance V(BR)DSS RDS(on) max TC = +25C Low Input Capacitance 20m @ VGS = -10V -18.0A -30V Fast Switching Speed -15.0A 29m @ VGS = -5V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description

DMP3056L 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID MAX V(BR)DSS RDS(ON) Low Gate Threshold Voltage TA = +25C Low Input Capacitance 50m @ VGS =-10V -4.3A -30V Fast Switching Speed 70m @ VGS =-4.5V -3.7A Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen

DMP3035SFG30V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized ID max V(BR)DSS RDS(ON) max Small form factor thermally efficient package enables higher TA = 25C density end products 20m @ VGS = -10V -9.5 A Occupies just 33% of the board area occupied by SO-8 enabling -

DMP3036SSS P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-Resistance V(BR)DSS RDS(on) max TC = +25C Low Input Capacitance 20m @ VGS = -10V -19.5A -30V Fast Switching Speed -16.2A 29m @ VGS = -5V Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description Halogen and Antimony Free.

DMP3065LVT P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max Low On-Resistance V(BR)DSS RDS(ON) max TA = +25C Low Input Capacitance Fast Switching Speed 42m @ VGS = -10V -5.1A -30V ESD Protected Gate 65m @ VGS = -4.5V -4.0A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Gre

DMP3098LSSSINGLE P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOP-8L 65m @ VGS = -10V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 115m @ VGS = -4.5V Moisture Sensitivity: Leve

DMP3028LFDE 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low Input Capacitance V(BR)DSS RDS(on) max TA = +25C Low On-Resistance 25m @ VGS = -10V -6.8A -30V Fast Switching Speed -5.0A 38m @ VGS = -4.5V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Descripti

DMP3008SFG30V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized ID max V(BR)DSS RDS(ON) max Small form factor thermally efficient package enables higher TA = 25C density end products 17m @ VGS = -10V -8.6A Occupies just 33% of the board area occupied by SO-8 enabling -3

DMP3010LK3P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Input Capacitance ID Low On-ResistanceV(BR)DSS RDS(on) max TA = 25C Fast Switching Speed "Green" Device (Note 1) 8m @ VGS = -10V -17A -30V Qualified to AEC-Q101 Standards for High Reliability 10.2m @ VGS = -4.5V -14.5A Mechanical Data Description and Appl

DMP3017SFK P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID V(BR)DSS RDS(on)max Low Input Capacitance TA = +25C 14m @ VGS = -10V -10.4A Low Input/Output Leakage -30V 25m @ VGS = -4.5V -7.8A ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.

DMP3018SFK P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID V(BR)DSS RDS(on)max Low Input Capacitance TA = +25C 14.5m @ VGS = -10V -10.2A Low Input/Output Leakage -30V 25.5m @ VGS = -4.5V -7.7A ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.

DMP3007SPS GreenP-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low RDS(ON) Minimizes On-State Losses ID Max BVDSS RDS(ON) Max Small Form Factor Thermally Efficient Package Enables Higher TC = +25C Density End Products 7m @ VGS = -10V -90A 100% Unclamped Inductive Switching Ensures More Reliability -30V ESD Pro

DMP3056LDMP-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low RDS(ON): Case: SOT-26 45m @VGS = -10V Case Material Molded Plastic, Green Molding Compound. UL Flammability Rating 94V-0 65m @VGS = -4.5V Moisture Sensitivity: Level 1 per J-STD-020 Low Input/Output Leakage Terminals: Finish - Matte Tin anneale

DMP3098LQP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceIDV(BR)DSS RDS(on) max Low Gate Threshold Voltage TA = +25C 70m@ VGS = -10V -3.8A Low Input Capacitance -30V 120m@ VGS = -4.5V -3.0A Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) H

DMP3050LVTP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-ResistanceID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = 25C Fast Switching Speed 50m @ VGS = -10V -4.5A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -30V 90m @ VGS = -4.5V -3.5A Halogen and Antimony Free. Green Device (Note 3) Qualified

DMP3007SCG 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Max Low RDS(ON) Ensures On State Losses are Minimized BVDSS RDS(ON) Max TC = +25C Small Form Factor Thermally Efficient Package Enables Higher Density End Products 6.8m @ VGS = -10V -50A -30V Occupies Just 33% of the Board Area Occupied by SO-8 Enabling 13m @

DMP3085LSSP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-ResistanceV(BR)DSS RDS(ON) MAX Package TA = +25C Low Input Capacitance 70m @VGS = -10V -3.8A Fast Switching Speed -30V SO-8 95m @VGS = -4.5V -3.2A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qua

DMP3020LSSSINGLE P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOP-8L 14m @ VGS = -10V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 25m @ VGS = -4.5V Moisture Sensitivity: Level 1 per J-STD-020D

DMP3036SFG 30V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits ID max Low RDS(ON) ensures on state losses are minimized. V(BR)DSS RDS(ON) max TA = +25C Small form factor thermally efficient package enables higher density end products. 20m @ VGS = -10V - 8.7 A -30V Occupies just 33% of the board area occupied by SO-8 enab

DMP3098LSDDUAL P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Dual P-Channel MOSFET Case: SOP-8L Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 65m @ VGS = -10V Moisture Sensitivity: Level 1 per J-STD-020D

DMP3098LDMP-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low RDS(ON): Case: SOT-26 Case Material - Molded Plastic. UL Flammability Rating 94V-0 65m @VGS = -10V Moisture Sensitivity: Level 1 per J-STD-020D 115m @VGS = -4.5V Terminals: Finish - Matte Tin Solderable per MIL-STD-202, Low Input/Output Leakage Method 208 Lead F

DMP3035LSSSINGLE P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SO-8 14m @ VGS = -20V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 18m @ VGS = -10V Moisture Sensitivity: Level 1 per J-STD-020

DMP3050LSSP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-ResistanceID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = 25C Fast Switching Speed 45m @ VGS = -10V -4.8A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -30V 80m @ VGS = -4.5V -3.5A Halogen and Antimony Free. Green Device (Note 3) Qualified

DMP3056LSSSINGLE P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOP-8L 45m @ VGS = -10V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 65m @ VGS = -4.5V Moisture Sensitivity: Level

DMP3056LSDDUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Dual P-Channel MOSFET Case: SOP-8L Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 45m @ VGS = -10V Moisture Sensitivity: Level

DMP3028LSD Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS -30 V Gate-Source Voltage 20 V VGSS Steady TA = +25C -6 ID A State -4.7 TA = +70C Continuous Drain Current (Note 5) VGS = 10V TA = +25C -7.4 t

DMP3098LP-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance: Case: SOT-2370m @ VGS = -10V, ID = -3.8A Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 120m @ VGS = -4.5V, ID = -3.0A Moisture Sensitivity: Level 1 per J-STD-020 Low Gate Threshold Voltage Terminals: Fi

DMP3013SFV 30V P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (Type UX) Product Summary Features and Benefits ID max Low RDS(ON)Ensures On-State Losses are Minimized BVDSS RDS(ON) max TC = +25C Small form Factor Thermally Efficient Package Enables Higher Density End Products 9.5m @ VGS = -10V -35A -30V Occupies 33% of the Board Area Occupied by SO-8 En

DMP3068L 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance V(BR)DS ID max Low Gate Threshold Voltage RDS(ON) max Package TA = +25C S Low Input Capacitance Fast Switching Speed -3.9A 72m @ VGS = -10V Low Input/Output Leakage -30V SOT-23 85m @ VGS = -4.5V -3.6A Totally Lead-Free & Fully RoHS Compliant (

DMP3017SFG30V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits ID max Low RDS(ON) ensures on state losses are minimized V(BR)DSS RDS(ON) max TA = +25C Small form factor thermally efficient package enables higher density end products 10m @ VGS = -10V -11.5A -30V Occupies just 33% of the board area occupied by SO-8 enabli

DMP3099LP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max Low Gate Threshold Voltage V(BR)DSS RDS(ON) max TA = +25C Low Input Capacitance Fast Switching Speed 65m @ VGS = -10V -3.8A -30V Low Input/Output Leakage 99m @ VGS = -4.5V -3.0A Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony

DMP3036SFV 30V P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (Type UX) Product Summary Features Low RDS(ON) Ensures On State Losses Are Minimized ID Max BVDSS RDS(ON) Max Small Form Factor Thermally Efficient Package Enables Higher TC = +25C Density End Products 20m @ VGS = -10V Occupies Just 33% of The Board Area Occupied by SO-8 -30V -30A 29m

BSP300SIPMOS Small-Signal Transistor N channel Enhancement mode Avalanche rated VGS(th)= 2.0... 4.0 V Pb-free lead plating; RoHS compliant Qualified according to AEC Q101Pin 1 Pin 2 Pin 3 Pin 4G D S DType VDS ID RDS(on) Package MarkingBSP300 800 V 0.19 A 20 PG-SOT223 BSP300Type RoHS compliant Tape and Reel Information PackagingBSP300Yes L632

Technische Information / Technical InformationIGBT-ModuleFP30R06W1E3IGBT-modulesEasyPIM Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und NTCEasyPIM module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and NTCVorlufige Daten / Preliminary DataV = 600VCESI = 30A / I = 60AC nom CRMTypische Anwendungen Typical Applications Hilfsumri

Preliminary dataBSP308SIPMOS Small-Signal-TransistorFeaturesProduct Summary N-Channel Drain source voltage VDS 30 V Enhancement modeDrain-Source on-state resistance RDS(on) 0.05 Logic Level Continuous drain current ID 4.7 A dv/dt rated4321VPS05163Type Package Ordering Code Pin 1 Pin 2/4 PIN 3BSP308 SOT-223 Q67000-S4011 G D SMaximum Ratings,a

SGP30N60 SGW30N60Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - paral

IGBTHigh speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diodeIKP30N65H5650V DuoPack IGBT and diodeHigh speed switching series fifth generationData sheetIndustrial Power ControlIKP30N65H5High speed switching series fifth generationHigh speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diode

SGP30N60 SGW30N60Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - paral

IGP30N60T TrenchStop Series IGW30N60TLow Loss IGBT in Trench and Fieldstop technology C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s G Designed for : E - Frequency Converters - Uninterruptible Power Supply Trench and Fieldstop technology for 600 V applications offers : - very tight paramete

SGP30N60HS SGW30N60HSHigh Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s GE Designed for operation above 30 kHz NPT-Technology for 600V applications offers: - parallel switching capability PG-TO-220-3-1 PG-TO-247-3 - moderate Eoff increase with temperature - very tight parameter distribut

IGBTHigh speed IGBT in Trench and Fieldstop technologyIGP30N60H3600V high speed switching series third generationData sheetIndustrial Power ControlIGP30N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low turn-off energy low VCEsat low EMI maximum junctio

IGBTHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technologyIGP30N65F5650V IGBT high speed switching series fifth generationData sheetIndustrial Power ControlIGP30N65F5High speed switching series fifth generationHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: CHigh speed F5 technology offering Best-in-Class efficiency in hard switching and resonant

IGBTHigh speed IGBT in Trench and Fieldstop technologyIGP30N60H3600V high speed switching series third generationDatasheetIndustrial & MultimarketIGP30N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low VCEsat low EMI maximum junction temperature 175C G

SGP30N60HS SGW30N60HSHigh Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s GE Designed for operation above 30 kHz NPT-Technology for 600V applications offers: - parallel switching capability PG-TO-220-3-1 PG-TO-247-3 - moderate Eoff increase with temperature - very tight parameter distribut

SGP30N60 SGW30N60Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - paral

SGP30N60HS SGW30N60HSHigh Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s GE Designed for operation above 30 kHz NPT-Technology for 600V applications offers: - parallel switching capability PG-TO-220-3-1 PG-TO-247-3 - moderate Eoff increase with temperature - very tight parameter distribut

SGP30N60 SGW30N60Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switc

Technische Information / Technical InformationIGBT-ModuleFP30R06W1E3_B11IGBT-modulesEasyPIM Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und PressFIT / NTCEasyPIM module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and PressFIT / NTCVorlufige Daten / Preliminary DataV = 600VCESI = 30A / I = 60AC nom CRMTypische Anwendungen Typical A

IGBTHigh speed 5 IGBT in TRENCHSTOPTM 5 technologyIGP30N65H5650V IGBT high speed switching series fifth generationData sheetIndustrial Power ControlIGP30N65H5High speed switching series fifth generationHigh speed 5 IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: CHigh speed H5 technology offering Best-in-Class efficiency in hard switching and resonanttopologi

Preliminary dataBSP308SIPMOS Power-TransistorFeaturesProduct Summary N-Channel Drain source voltage VDS 30 V Enhancement modeDrain-Source on-state resistance RDS(on) 0.05 Logic Level Continuous drain current ID 4.7 A dv/dt rated4321VPS05163Type Package Ordering Code Pin 1 Pin 2/4 PIN 3BSP308 SOT-223 Q67000-S4011 G D SMaximum Ratings,at Tj =

IGBTHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diodeIKP30N65F5650V DuoPack IGBT and diodeHigh speed switching series fifth generationData sheetIndustrial Power ControlIKP30N65F5High speed switching series fifth generationHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked withRAPID 1 fast and soft antiparal

1200V XPTTM VCES = 1200VIXYP30N120C3GenX3TM IGBTs IC110 = 30AIXYH30N120C3 VCE(sat) 3.3V tfi(typ) = 88nsHigh-Speed IGBTfor 20-50 kHz SwitchingTO-220 (IXYP)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 1200 VGCTabEVCGR TJ = 25C to 175C, RGE = 1M 1200 VVGES Continuous 2

XPTTM 650V IGBT VCES = 650VIXYP30N65C3GenX3TM IC110 = 30AIXYH30N65C3 VCE(sat) 2.7V tfi(typ) = 24nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-220Symbol Test Conditions Maximum RatingsGCTabVCES TJ = 25C to 175C 650 V EVCGR TJ = 25C to 175C, RGE = 1M 650 VTO-247VGES Conti

Preliminary Technical InformationVCES = 600VHigh-Gain IGBT IXGP30N60B4D1IC110 = 30Aw/ Diode VCE(sat) 1.7V tfi(typ) = 88nsHigh-Speed PT Trench IGBTTO-220Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 600 VCTabEVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VVGEM Transient 30 V G = Gate C = Collector

GenX3TM 600V VCES = 600V IXGA30N60C3 IGBTs IC110 = 30A IXGP30N60C3 VCE(sat) 3.0V IXGH30N60C3 tfi(typ) = 47ns High-Speed PT IGBTs for 40-100kHz Switching TO-263 AA (IXGA) G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TC = 25C to 150C 600 V VCGR TJ = 25C to 150C, RGE = 1M 600 V TO-220AB (IXGP) VGES Continuous 20 V

VCES = 1200VGenX3TM 1200V IXGA30N120B3IC110 = 30AIGBTs IXGP30N120B3VCE(sat) 3.5VIXGH30N120B3tfi(typ) = 204nsHigh-Speed Low-Vsat PTIGBTs 3-20 kHz SwitchingTO-263 (IXGA)GESymbol Test Conditions Maximum Ratings C (Tab)VCES TC = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VTO-220 (IXGP)VGES Continuous 20 VVGEM Tra

N E W P R O D U C T B R I E FEfficiency Through Technology1200V XPT IGBTsExtreme-Light Punch-Through IGBTs for High-Speed Hard-Switching ApplicationsOctober 2012OVERVIEWTO-247IXYS Corporation expands its 1200V XPT IGBT product line. With current ratings of up to 220A, these new devices are designed to minimize switching losses in high-voltage, hard-switching applica-tion

Advance Technical DataVCES = 600 VIXGP 30N60B2HiPerFASTTM IGBTIC25 = 70 AVCE(sat)

GenX3TM 600V IGBTs VCES = 600V IXGA30N60C3D4 w/ Diode IC110 = 30A IXGP30N60C3D4 VCE(sat) 3.0V tfi(typ) = 47ns High-Speed PT IGBTs for 40-100kHz Switching TO-263 AA (IXGA) Symbol Test Conditions Maximum Ratings G E VCES TC = 25C to 150C 600 V C (Tab) VCGR TJ = 25C to 150C, RGE = 1M 600 V TO-220AB (IXGP) VGES Continuous 20 V

Advance Technical InformationX-Class HiPerFETTM VDSS = 600VIXFA30N60XPower MOSFET ID25 = 30AIXFP30N60X RDS(on) 155m N-Channel Enhancement ModeAvalanche RatedTO-263 (IXFA)Fast Intrinsic DiodeGSD (Tab)Symbol Test Conditions Maximum RatingsTO-220 (IXFP)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C, RGS = 1M

VCES = 600 VIXGP 30N60C2HiPerFASTTM IGBTIC25 = 70 AC2- Class High Speed IGBTsVCE(sat) = 2.7 Vtfi typ = 32 nsSymbol Test Conditions Maximum Ratings TO-220 (IXGP)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VC (TAB)VGEM Transient 30 V GCEIC25 TC = 25C (limited by leads) 70 AIC110 TC = 110C30 AG = Gate, C =

GenX3TM 600V IGBTs VCES = 600V IXGA30N60C3C1 w/ SiC Anti-Parallel IC110 = 30A IXGP30N60C3C1 Diode VCE(sat) 3.0V IXGH30N60C3C1 tfi(typ) = 47ns TO-263 AA (IXGA) High-Speed PT IGBTs for 40 - 100kHz Switching G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TC = 25C to 150C 600 V VCGR TJ = 25C to 150C, RG

MCCMicro Commercial ComponentsTM TIP29,A,B,C(NPN)20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311TIP30,A,B,C(PNP)Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates 1.0 AmpRoHS Compliant. See ordering information) Complementary Marking: Type Number Rth(jc) is 4.167OC/W, Rth(ja) i

Ordering number : ENA1457AATP301P-Channel Power MOSFEThttp://onsemi.com 100V, 28A, 75m , ATPAKFeatures ON-resistance RDS(on)=57m (typ.) Input capacitance Ciss=4000pF (typ.) 10V drive Halogen free complianceSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --100 VGate-t

TIP29, A, B, C (NPN),TIP30, A, B, C (PNP)Complementary SiliconPlastic Power TransistorsDesigned for use in general purpose amplifier and switchingapplications. Compact TO-220 AB package.http://onsemi.comFeatures1 AMPERE Pb-Free Packages are Available*POWER TRANSISTORSCOMPLEMENTARY SILICON40, 60, 80, 100 VOLTS, 80 WATTSMARKINGDIAGRAM4TO-220ABTIPxxxGCASE 2

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

NTP30N06L, NTB30N06LPower MOSFET30 Amps, 60 Volts, Logic Level,N-Channel TO-220 and D2PAKDesigned for low voltage, high speed switching applications inhttp://onsemi.compower supplies, converters and power motor controls and bridgecircuits.30 AMPERES, 60 VOLTSFeaturesRDS(on) = 46 mW Pb-Free Packages are AvailableN-ChannelDTypical Applications Power Supplies

Ordering number : ENA1654AATP302P-Channel Power MOSFEThttp://onsemi.com 60V, 70A, 13m , ATPAKFeatures ON-resistance RDS(on)1=10m (typ.) Input capacitance Ciss=5400pF (typ.) 4.5V drive Halogen free complianceSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --60 VGate-t

TIP29, A, B, C (NPN),TIP30, A, B, C (PNP)Complementary SiliconPlastic Power TransistorsDesigned for use in general purpose amplifier and switchingapplications. Compact TO-220 package.www.onsemi.comFeatures1 AMPERE These Devices are Pb-Free and are RoHS Compliant*POWER TRANSISTORSMAXIMUM RATINGS COMPLEMENTARY SILICONRating Symbol Value Unit 40, 60, 80, 100 VOLTS, Col

NTP30N06, NTB30N06Power MOSFET30 Amps, 60 VoltsN-Channel TO-220 and D2PAKDesigned for low voltage, high speed switching applications inhttp://onsemi.compower supplies, converters and power motor controls and bridgecircuits.30 AMPERES, 60 VOLTSFeaturesRDS(on) = 42 mW Pb-Free Packages are AvailableN-ChannelDTypical Applications Power Supplies ConvertersG

NTMSD3P303R2FETKYP-Channel Enhancement-ModePower MOSFET and Schottky DiodeDual SO-8 PackageFeatures High Efficiency Components in a Single SO-8 Package http://onsemi.com High Density Power MOSFET with Low RDS(on),MOSFETSchottky Diode with Low VF-3.05 AMPERES Independent Pin-Outs for MOSFET and Schottky Die-30 VOLTSAllowing for Flexibility in Application Use

Ordering number : ENA2192 ATP304 P-Channel Power MOSFEThttp://onsemi.com -60V, -100A, 6.5m, ATPAK Features On-resistance RDS(on)1=5.0m(typ.) 4.5V drive Input Capacitance Ciss=13000pF(typ.) Halogen Free compliance Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions Ratings UnitDrain to Source Voltage VDSS -60 V Gate to S

Ordering number : ENA1655DSMP3003P-Channel Power MOSFEThttp://onsemi.com 75V, 100A, 8.0m , TO-263-2L/TO-263FeaturesTO-263 ON-resistance RDS(on)1=6.2m (typ.) 4V drive Input capacitance Ciss=13400pF (typ.)SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain to Source Voltage VDSS --75 VGate to Source

TIP29, A, B, C (NPN),TIP30, A, B, C (PNP)Complementary SiliconPlastic Power TransistorsDesigned for use in general purpose amplifier and switchingapplications. Compact TO-220 package.www.onsemi.comFeatures1 AMPERE These Devices are Pb-Free and are RoHS Compliant*POWER TRANSISTORSMAXIMUM RATINGS COMPLEMENTARY SILICONRating Symbol Value Unit 40, 60, 80, 100 VOLTS, Col

TIP3055 (NPN),TIP2955 (PNP)Complementary SiliconPower TransistorsDesigned for general-purpose switching and amplifier applications.http://onsemi.comFeatures DC Current Gain - 15 AMPEREhFE = 20 - 70 @ IC POWER TRANSISTORS= 4.0 AdcCOMPLEMENTARY SILICON Collector-Emitter Saturation Voltage - 60 VOLTS, 90 WATTSVCE(sat) = 1.1 Vdc (Max) @ IC = 4.0 Adc Excell

NTP30N20Preferred DevicePower MOSFET30 Amps, 200 VoltsN-Channel Enhancement-Mode TO-220http://onsemi.comFeatures Source-to-Drain Diode Recovery Time Comparable to a Discrete30 AMPERESFast Recovery Diode200 VOLTS Avalanche Energy Specified68 mW @ VGS = 10 V (Typ) IDSS and RDS(on) Specified at Elevated Temperature Pb-Free Package is Available*N-ChannelD

Ordering number : ENA1655DSMP3003P-Channel Power MOSFEThttp://onsemi.com 75V, 100A, 8.0m , TO-263-2L/TO-263FeaturesTO-263 ON-resistance RDS(on)1=6.2m (typ.) 4V drive Input capacitance Ciss=13400pF (typ.)SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain to Source Voltage VDSS --75 VGate to Source

MTP3055VPreferred DevicePower MOSFET12 Amps, 60 VoltsN-Channel TO-220This Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. Designed for low voltage, highhttp://onsemi.comspeed switching applications in power supplies, converters and powermotor controls, these devices are particularly well suited for bridge12 AMPEREScircuits where dio

MTP30P06VPreferred DevicePower MOSFET30 Amps, 60 VoltsP-Channel TO-220This Power MOSFET is designed to withstand high energy in thehttp://onsemi.comavalanche and commutation modes. Designed for low voltage, highspeed switching applications in power supplies, converters and power30 AMPERES, 60 VOLTSmotor controls, these devices are particularly well suited for bridgeRDS(on)

TIP3055NPN SILICON POWER TRANSISTOR Designed for Complementary Use with the SOT-93 PACKAGETIP2955 Series (TOP VIEW) 90 W at 25C Case TemperatureB1 15 A Continuous Collector CurrentC 2 Customer-Specified Selections Available3EPin 2 is in electrical contact with the mounting base.MDTRAAAabsolute maximum ratings at 25C case temperature (unless otherwis

http://www.fujielectric.com/products/semiconductor/FMP30N60S1 FUJI POWER MOSFETSuper J-MOS series N-Channel enhancement mode power MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicLow on-state resistanceTO-22010+0.5 0 4.50.21.30.2Low switching losseasy to use (more controllabe switching dV/dt by R )gDrain(D)ApplicationsUPS1.2 0.2ServerPRE-

http://www.fujielectric.com/products/semiconductor/6MBP300VEA060-50 IGBT ModulesIGBT MODULE (V series)600V / 300A / IPMFeatures Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching High performance and high reliability IGBT with overheating protection Higher reliability because of a big decr

IGBT Modules6MBP30RH060IGBT-IPM R series 600V / 30A / 6 in one-package Features Low power loss and soft switching High performance and high reliability IGBT with overheating protection Higher reliability because of a big decrease in number of parts in built-in control circuit Applications Inverter for motor drive AC and DC servo drive amplifier UPS (Uni

6MBP300RA060600V / 300A 6 in one-packageIGBT-IPM R seriesFeatures Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching High performance and high reliability IGBT with overheating protection Higher reliability because of a big decrease in number of parts inbuilt-in control circuitMaximum rati

http://www.fujielectric.com/products/semiconductor/7MBP300VEA060-50 IGBT ModulesIGBT MODULE (V series)600V / 300A / IPMFeatures Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching High performance and high reliability IGBT with overheating protection Higher reliability because of a big decr

http://www.fujielectric.com/products/semiconductor/6MBP30VAA060-50 IGBT ModulesIGBT MODULE (V series)600V / 30A / IPMFeatures Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching Compatible with existing IPM-N series packages High performance and high reliability IGBT with overheating protec

JULY 1996GP300LSS16SADVANCE ENGINEERING DATADS4136-5.2GP300LSS16SPOWERLINE N-CHANNEL IGBT MODULEAPPLICATIONS TYPICAL KEY PARAMETERSVCES 1600V High Power Switching.VCE(sat) 3.3V Motor Control.IC(CONT) 300A UPS.IC(PK) 600A AC And DC Servo Drive Amplifiers. tr 270nstf 590nsFEATURES n - Channel.PACKAGE OUTLINE Enhancement Mode. High Input Impedance. High Sw

RFD3055, RFD3055SMS E M I C O N D U C T O RRFP305512A, 60V, Avalanche Rated, N-ChannelEnhancement-Mode Power MOSFETs (MegaFETs)February 1994Features PackagingJEDEC TO-220AB 12A, 60VTOP VIEW rDS(ON) = 0.150SOURCE Temperature Compensating PSPICE ModelDRAIN Peak Current vs Pulse Width Curve GATE UIS Rating Curve +175oC Operating TemperatureJED

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Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPLASTIC POWER TRANSISTORS TIP29, A, B, C NPNTIP30, A, B, C PNPTO-220Plastic PackageComplementary Silicon Transistors intended for a wide variety of Switching and Amplifier Applications, Series and Shunt Regulators, Driver and Output stages of Hi-Fi AmplifiersABSOLUTE MAXIMUM RATINGS (Ta=25

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPOWER TRANSISTORS TIP2955F PNPTIP3055F NPNTO- 3P Fully IsolatedPlastic PackageBCEDesigned for General Purpose Switching and Amplifier ApplicationsABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITCollector-Emitter Voltage VCEO 60 VCollector-Emitter Voltage VCER 70 VCollector-

SEMICONDUCTOR KMB7D6NP30QTECHNICAL DATA N and P-Ch Trench MOSFETGeneral DescriptionSwitching regulator and DC-DC Converter applications.It s mainly suitable for power management in PC,Hportable equipment and battery powered systems.TD P GLFEATURES AN-ChannelDIM MILLIMETERS: VDSS=30V, ID=7.6A.A 5.05+0.25/-0.20: RDS(ON)=20m (Max.) @ VGS=10V_3.90 + 0.3B18 5

SEMICONDUCTOR KMB5D5NP30QTECHNICAL DATA N and P-Ch Trench MOSFETGeneral DescriptionSwitching regulator and DC-DC Converter applications.It s mainly suitable for power management in PC,Hportable equipment and battery powered systems.TD P GLFEATURES AN-ChannelDIM MILLIMETERS: VDSS=30V, ID=5.5A.A 5.05+0.25/-0.20: RDS(ON)=40m (Max.) @ VGS=10V_3.90 + 0.3B18 5

SEMICONDUCTOR KMB010P30QATECHNICAL DATA P-Ch Trench MOSFETGENERAL DESCRIPTIONThis Trench MOSFET has better characteristics, such as fast switching time, lowon resistance, low gate charge and excellent avalanche characteristiscs. It is mainlysuitable for Battery pack. HTD PG LFEATURES AVDSS=-30V, ID=-10A.DIM MILLIMETERSA _+Drain-Source ON Resistance. 4.85 0.2B1 _

SEMICONDUCTOR KMB3D0P30SATECHNICAL DATAP-Ch Trench MOSFETGeneral DescriptionThis Trench MOSFET has better characteristics, such as fast switchingEtime, low on resistance, low gate charge and excellent avalancheL B LDIM MILLIMETERScharacteristics. It is mainly suitable for portable equipment._+A 2.93 0.20B 1.30+0.20/-0.15C 1.30 MAX23 D 0.40+0.15/-0.05E 2.40+0.30

SEMICONDUCTOR KMA7D0NP30QTECHNICAL DATA N and P-CH Trench MOSFETGeneral DescriptionSwitching regulator and DC-DC converter applications.It s mainly suitable for power management in notebook, portable equipment and battery powered systems.AFEATURES 8 5TN-ChannelB1B2L: VDSS=30V, ID=7A.1 4: RDS(ON)=17m (Typ.) @ VGS=10V.: RDS(ON)=22m (Typ.) @ VGS=4.5V. DIM MILLIMET

SEMICONDUCTOR KMB8D0P30QATECHNICAL DATA P-Ch Trench MOSFETGENERAL DESCRIPTIONThis Trench MOSFET has better characteristics, such as fast switching time, lowon resistance, low gate charge and excellent avalanche characteristiscs. It is mainlyHsuitable for Load Switch and Battery pack.TD P GLUFEATURES AVDSS=-30V, ID=-8A.DIM MILLIMETERSDrain to Source On Resistanc

SEMICONDUCTOR KMB014P30QATECHNICAL DATA P-Ch Trench MOSFETGENERAL DESCRIPTIONThis Trench MOSFET has better characteristics, such as fast switching time, lowon resistance, low gate charge and excellent avalanche characteristiscs. It is mainlysuitable for Battery pack. HTD PG LFEATURES AVDSS=-30V, ID=-14A.DIM MILLIMETERSA _+Drain-Source ON Resistance. 4.85 0.2B1 _

SEMICONDUCTOR KMB7D1DP30QATECHNICAL DATA Dual P-Ch Trench MOSFETGeneral DescriptionThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalanchecharacteristics. It is mainly suitable for portable equipment and LoadHTSwitch.D PG LFEATURES ADIM MILLIMETERSVDSS=-30V, ID=-7.1AA _4.85 0.2+B1 _

SEMICONDUCTOR KMD4D5P30XATECHNICAL DATA P-CH Trench MOSFETGeneral DescriptionThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalanchecharacteristics. It is mainly suitable for cellular phone and netebookcomputer power management and other battery powered circuits.DHJFEATURES EVDSS=-30V, ID=-4.

SEMICONDUCTOR KMB7D0NP30QATECHNICAL DATA N and P-Ch Trench MOSFETGeneral DescriptionSwitching regulator and DC-DC Converter applications.It s mainly suitable for Back-light Inverter.HTD PG LFEATURES N-ChannelA: VDSS=30V, ID=7A.DIM MILLIMETERSA _+: RDS(ON)=23.5m (Max.) @ VGS=10V 4.85 0.2B1 _3.94 + 0.2: RDS(ON)=39m (Max.) @ VGS=4.5VB2 _6.02+ 0.38 5D _

SEMICONDUCTOR KMB7D0NP30QTECHNICAL DATA N and P-Ch Trench MOSFETGeneral DescriptionSwitching regulator and DC-DC Converter applications.It s mainly suitable for power management in PC,Hportable equipment and battery powered systems.TD P GLFEATURES AN-ChannelDIM MILLIMETERS: VDSS=30V, ID=7A.A 5.05+0.25/-0.20: RDS(ON)=25m (Max.) @ VGS=10V_3.90 + 0.3B18 5 _

SEMICONDUCTOR KMB8D0P30QTECHNICAL DATAP-Ch Trench MOSFETGeneral DescriptionIt s mainly suitable for battery power management in cell phone,PDA and notebookHTD P GLFEATURES VDSS=-30V, ID=-8A.ALow Drain-Source ON Resistance.: RDS(ON)=20m (Max.) @ VGS=-10VDIM MILLIMETERSA 5.05+0.25/-0.20: RDS(ON)=35m (Max.) @ VGS=-4.5V_3.90 + 0.3B18Super High Dense Cell

N-Channel MOS FET FKP300A June, 2007 Features Package---FM100 (TO-3P Full Mold) Low on-resistance Low input capacitance Avalanche energy capability guaranteed Applications PDP driving High speed switching Equivalent circuit D (2) G (1) S (3) Absolute maximum ratings (Ta=25C Parameter Symbol Rating UnitDrain to Source Voltage V

p-n n-. 2302P max, 300U max,B 20U max,B 20U max,B 10I max, 24Tmax,C 125U ,B 1...3.5I,A 10 U,B 10S,/ 5...12 U, 7I , 3...2411, 2012, 8

CEP3060/CEB3060N-Channel Enhancement Mode Field Effect TransistorFEATURES30V, 105A,RDS(ON) = 6m @VGS = 10V. RDS(ON) = 8m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).DHigh power and current handing capability.Lead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESSTO-263(DD-PAK)TO-220ABSOLUTE MAXIMUM RATINGS Tc = 25

CEP30N15L/CEB30N15LN-Channel Enhancement Mode Field Effect Transistor FEATURES150V, 30A, RDS(ON) = 70m @VGS = 10V. RDS(ON) = 80m @VGS = 5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK)TO-220SABSOLUTE MAXIMUM RATINGS T

CEP30N3/CEB30N3CEF30N3N-Channel Enhancement Mode Field Effect TransistorPRELIMINARYFEATURESType VDSS RDS(ON) ID @VGSCEP30N3 300V 110m 30A 10VCEB30N3 300V 110m 30A 10VCEF30N3 300V 110m 30A e 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.GSCEB SERIES CEP SERIES CEF SERI

CEP30P03/CEB30P03P-Channel Enhancement Mode Field Effect TransistorFEATURES-30V, -30A, RDS(ON) =32m @VGS = -10V.RDS(ON) =50m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc

AP30T10GS-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 55m Fast Switching Characteristic ID 19AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized

AP30G100WRoHS-compliant ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORFeaturesVCES 1000V High speed switching IC 30A Low Saturation VoltageVCE(sat)=3.0V@IC=30ACG Industry Standard TO-3P Package GC RoHS Compliant TO-3PEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter Voltage 1000 VVG

AP30P10GSRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID -25AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance

AP30T10GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100VDDD Lower Gate Charge RDS(ON) 55mD Fast Switching Characteristic ID3 4.5AGSS Halogen Free & RoHS CompliantSSO-8DDescriptionAP30T10 series are from Advanced Power innovated design andsilicon process techno

AP30T10GK-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 55m Fast Switching Characteristic ID 4.8AG Halogen Free & RoHS Compliant ProductSDescriptionDAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching

AP30T10GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 55m RoHS Compliant & Halogen-Free ID 16AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized device design, low on-Gresis

AP30T10GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 55m Fast Switching Characteristic ID 19AG RoHS Compliant & Halogen-FreeSDescriptionAP30T10 series are from Advanced Power innovated design and GDSTO-252(H)silicon process technology to

AP30T10GI-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 55m RoHS Compliant & Halogen-Free ID 16AGSDescriptionAP30T10 series are from Advanced Power innovated design andsilicon process technology to achie

AP30T03GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 30m Fast Switching Characteristic ID 17AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast switching,S

AP30G120SWPb Free Plating ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTOR WITH FRD.Features High speed switching VCES 1200V Low Saturation Voltage IC 30AVCE(sat)=3.0V@IC=30AC CO-PAK, IGBT with FRDGTO-3PG RoHS Compliant CEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter Voltage 1200 V

AP30P10GS-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID -25AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggediz

AP30N30WPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Avalanche Test BVDSS 250VSimple Drive Requirement RDS(ON) 68m Lower On-resistance ID 36A G RoHS CompliantSDescriptionAP30N30 from APEC provide the designer with the best combination of fas

AP30T10GS-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 55m Fast Switching Characteristic ID 19AG RoHS Compliant & Halogen-FreeSDescriptionAP30T10 series are from Advanced Power innovated designand silicon process technology to achieve the lowest

AP30T10GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 55m Fast Switching Characteristic ID 19AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized

AP30P10GIRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID -25AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance

AP30T10GK-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 55m Fast Switching Characteristic ID 4.8AG Halogen Free & RoHS Compliant ProductSDescriptionDAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching

AP30P10GH-HFHalogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID -25AG RoHS Compliant & Halogen-FreeSDescriptionAP30P10 series are from Advanced Power innovat

AP30P10GP-HFHalogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID -25AG RoHS Compliant & Halogen-FreeSDescriptionAP30P10 series are from Advanced Power innovat

AP30G120BSW-HFHalogen-Free ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTOR WITH FRD.Features High Speed Switching VCES 1200V Low Saturation Voltage IC 30AVCE(sat)=2.9V@IC=30AC CO-PAK, IGBT With FRD GCTO-3PG RoHS Compliant & Halogen-FreeEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter

AP30G120WPb Free Plating ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORFeaturesVCES 1100V High speed switching IC 30A Low Saturation VoltageVCE(sat)=3.0V@IC=30ACG Industry Standard TO-3P PackageG RoHS Compliant TO-3PCEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter Voltage 1100 V

AP30P10GH-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID -25AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggediz

AP30G120ASWRoHS-compliant ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTOR WITH FRD.Features High Speed Switching VCES 1200V Low Saturation Voltage IC 30AVCE(sat)=2.9V@IC=30AC CO-PAK, IGBT With FRD GCTO-3PG RoHS CompliantEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter Voltage 1200 V

AP30G120CSW-HFHalogen-Free ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTOR WITH FRD.Features High Speed Switching VCES 1200V Low Saturation Voltage IC 30AVCE(sat)=2.9V@IC=30AC CO-PAK, IGBT With FRD GCTO-3PG RoHS Compliant & Halogen-FreeEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter

AP30G40GEO-HFHalogen-Free ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTOR ICP=150A @VGE=3.0V VCE 400VC Low Gate Drive ICP 150ACCC Strobe Flash Applications RoHS Compliant & Halogen-Free CGEETSSOP-8GEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCECollector-Emitter Voltage 400 VVGEPPeak Gate-E

AP30T10GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 55m Fast Switching Characteristic ID 19AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with the GDSTO-252(H)best combination of fast sw

AP30N30WIPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Avalanche Test BVDSS 250VSimple Drive Requirement RDS(ON) 68m Lower On-resistance ID 30A G RoHS CompliantSDescriptionAP30N30 from APEC provide the designer with the best combinationof f

AP30P10GP-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID -25AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedi

AP30T10GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100VDDD Lower Gate Charge RDS(ON) 55mD Fast Switching Characteristic ID 4.5AGSS Halogen Free & RoHS CompliantSSO-8DDescriptionAP30T10 series are from Advanced Power innovated design andsilicon process technol

AFP3050S Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3050S, P-Channel enhancement mode -30V/-9A,RDS(ON)=60m@VGS=-10V MOSFET, uses Advanced Trench Technology -30V/-7A,RDS(ON)=72m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. -30V/-5A,RDS(ON)=108m@VGS=-2.5V These devices are particularly suited for low

Spec. No. : C400N3 Issued Date : 2006.10.17 CYStech Electronics Corp.Revised Date : Page No. : 1/5 P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTP3001N3 Description The MTP3001N3 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. Features @V =-10V,

P3010BVN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID30m @VGS = 10V100V 5.8ASOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSDrain-Source Voltage VDS 100VVGSGate-Source Voltage 20TA = 25 C5.8IDContinuous Drain CurrentTA = 70 C4.6AIDM37Pulsed Drain Current

P3004BDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID30m @VGS = 10V40V 29ATO-252100% Rg tested100% UIS testedABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C29IDContinuous Drain CurrentTC = 70 C23AIDM80Pulsed Drain Current1

P3003EDGP-Channel Logic Level Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID30m @VGS = -10V-18A-30VTO-252ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -30 VVGSGate-Source Voltage 20 VTC= 25 C-18IDContinuous Drain CurrentTC= 100 C-12 AIDM-30Pul

P3055LDGN-Channel Logic Level Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID90m @VGS = 10V25V 12ATO-252ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC= 25 C12IDContinuous Drain CurrentTC= 100 C8 AIDM45Pulsed Drain Current1EASAvalanche Energy

P3004ND5GN&P-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID Channel30m @VGS = 10V40V 12A N55m @VGS = -10V-40V -8.8A PTO-252- 5100% Rg tested100% UIS testedABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS UNITSN 40VDSDrain-Source VoltageP -40VN 20VGSGate-Source VoltageP

P3055LLGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID25V 72m @VGS = 10V 6A SOT- 223ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSGate-Source Voltage VGS20 VTA = 25 C6IDContinuous Drain CurrentTA = 70 C3.3AIDM21Pulsed Drain Current2IASAvalanche Current 12Av

HFP30N06 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel Enhancement Mode Field Effect Transistor General Description TO-220 This Power MOSFET is produced using advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalanche ch

DH100P30/DH100P30F/DH100P30I/DH100P30E/DH100P30B/DH100P30D30A 100V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel Enhanced VDMOSFETs, UsedV -100VDSS =advanced trench technology and design, provide toexcellent R with low gate charge. Which accords RDSON DS(on) TYP) =35mwith the RoHS standard.I = -30AD2 Features Fast Switching Low ON

Product specificationDMP3030SNFeatures Mechanical Data Low On-Resistance Case: SC59 Low Gate Threshold Voltage Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture sensitivity: Level 1 per J-STD-020C Fast Switching Speed Terminals: Finish Matte Tin annealed ove

Product specificationDMP3098LP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID Low Gate Threshold Voltage V(BR)DSS RDS(on) maxTA = 25C Low Input Capacitance Fast Switching Speed 70m@ VGS = -10V -3.8A Low Input/Output Leakage -30V 120m@ VGS =-4.5V -3.0A Lead Free By Design/RoHS Compliant (Note 1)

SEMICONDUCTORFTK55P30DTECHNICAL DATAFTK55P30D P-Channel Power MOSFET AIDESCRIPTION CJThe FTK55P30D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. DIM MILLIMETERSA 6 50 0 2B 5 60 0 2This device is well suited for high current load applications. C 5 20 0 2D 1 50 0 2E 2 70 0 2F 2 30 0 1HH 1 00

MXP3007CT MXP3007CD Datasheet 30V N-Channel MOSFET Applications: Power Supply VDSS RDS(ON) (Max) IDa DC-DC Converters 30 V 7.0 m 114A Features: Lead Free Low RDS(ON) to Minimize Conductive Loss Low Gate Change for Fast Switching Application Optimized BVDSS Capability Ordering Information Part Number Package Brand MXP3007CT TO220 MXP MXP

SGTP30V60FD2PU 30A600V C 2SGTP30V60FD2PU 1GField Stop 5UPSSMPS PFC 3E 30A600VVCE(sat)( )=1.65V@IC=30A

BLVP304 P MOSFET P MOSFETP MOSFETP MOSFET: :: : P VDMOS (T=25) (T=25) (T=25)

Pb Free Producthttp://www.ncepower.com NCEP3085EGNCE N-Channel Super Trench Power MOSFET Description The NCEP3085EG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

http://www.ncepower.comNCE01P30KNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE01P30K uses advanced trench technology anddesign to provide excellent R with low gate charge. It canDS(ON)be used in a wide variety of applications. It is ESD protested.General Features V =-100V,I =-30A Schematic diagramDS DR

http://www.ncepower.com NCEP30P90KNCE P-Channel Super Trench Power MOSFETDescriptionThe NCEP30P90K uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-frequency switchi

http://www.ncepower.com NCEP3065QUNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP3065QU uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-frequency switchi

Pb Free Producthttp://www.ncepower.com NCEP30T17GUNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP30T17GU uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghig

Pb Free Producthttp://www.ncepower.com NCEP30T17GNCE N-Channel Super Trench Power MOSFET Description The NCEP30T17G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

Pb Free Producthttp://www.ncepower.com NCEP3060EQNCE N-Channel Super Trench Power MOSFET Description The NCEP3060EQ uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

NCE30P30Lhttp://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P30L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-30V,ID =-30A RDS(ON)

http://www.ncepower.com NCEA15P30KNCE Automotive P-Channel Enhancement Mode Power MOSFETDescriptionThe NCEA15P30K uses advanced trench technology anddesign to provide excellent R with low gate charge. It canDS(ON)be used in a wide variety of applications. It is ESD protested.General Features V =-150V,I =-30ADS DSchematic diagramR

Pb Free Producthttp://www.ncepower.com NCEP3090GUNCE N-Channel Super Trench Power MOSFET Description The NCEP3090GU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

http://www.ncepower.com NCEP30T21GUNCE N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEP30T21GU uses Super Trench technology that isV =30V,I =210ADS Duniquely optimized to provide the most efficient high R =0.72m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and R =0.85m (typical) @ V =4.5VDS(ON) GSswitching power lo

http://www.ncepower.com NCEP3045BGUNCE N-Channel Super Trench Power MOSFET Description General Features The NCEP3045BGU uses Super Trench technology that is VDS =30V,ID =45A uniquely optimized to provide the most efficient high RDS(ON)=4.4m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=5.3m (typical) @ VGS=4.5V switching power los

http://www.ncepower.com NCEP30PT16GNCE P-Channel Super Trench Power MOSFET Description General Features The NCEP30PT16G uses Super Trench technology that is VDS =-30V,ID =-160A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.3m (typical) @ VGS=-10V switching performance. Both conduction and switching power RDS(ON)=3.3m (typical) @ VGS=-4.5V losse

http://www.ncepower.com NCEP30T22GUNCE N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEP30T22GU uses Super Trench technology that isV =30V,I =220ADS Duniquely optimized to provide the most efficient high R =0.62m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and R =0.80m (typical) @ V =4.5VDS(ON) GSswitching power lo

Pb Free Producthttp://www.ncepower.com NCEP30T19GNCE N-Channel Super Trench Power MOSFET Description The NCEP30T19G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

Pb Free Producthttp://www.ncepower.com NCEP30T12GNCE N-Channel Super Trench Power MOSFET Description The NCEP30T12G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

Pb Free Producthttp://www.ncepower.com NCE55P30NCE P-Channel Enhancement Mode Power MOSFET Description The NCE55P30 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-55V,ID =-30A RDS(ON)

http://www.ncepower.com NCEP30P90GNCE P-Channel Super Trench Power MOSFET Description The NCEP30P90G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

http://www.ncepower.comNCEP15P30ANCE P-Channel Super Trench Power MOSFETDescriptionThe NCEP15P30A uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =-150V,I =-30ADS Dswitching performance. Both conduction and switching power R =83m (typical) @ V =-10VDS(ON) GSlosses are minimized due to an extremely lo

http://www.ncepower.com NCEP3065BQUNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP3065BQU uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-frequency switc

http://www.ncepower.comNCE15P30NCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE15P30 uses advanced trench technology and designto provide excellent R with low gate charge. It can be usedDS(ON)in a wide variety of applications.General Features V =-150V,I =-30A Schematic diagramDS DR

Pb Free Producthttp://www.ncepower.com NCEP3045GUNCE N-Channel Super Trench Power MOSFET Description The NCEP3045GU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

http://www.ncepower.com NCEP30T15GUNCE N-Channel Super Trench Power MOSFET Description The NCEP30T15GU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

http://www.ncepower.comNCEAP30T17GUNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP30T17GU uses Super Trench technology that is V =30V,I =290A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequency R =0.97m , typical@ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =1.25m ,

http://www.ncepower.comNCEP15P30AKNCE P-Channel Super Trench Power MOSFETDescriptionThe NCEP15P30AK uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =-150V,I =-29.5ADS Dswitching performance. Both conduction and switching power R =90m (typical) @ V =-10VDS(ON) GSlosses are minimized due to an extremel

http://www.ncepower.com NCE01P30INCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P30I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-30A Schematic diagram RDS(ON)

Pb Free Producthttp://www.ncepower.com NCE30P30KNCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P30K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-30V,ID =-30A RDS(ON)

Pb Free Producthttp://www.ncepower.com NCE01P30NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P30 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-30A Schematic diagram RDS(ON)

http://www.ncepower.com NCE01P30LNCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P30L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-30A Schematic diagram RDS(ON)

http://www.ncepower.com NCEP30T13GUNCE N-Channel Super Trench Power MOSFET Description General Features The NCEP30T13GU uses Super Trench technology that is VDS =30V,ID =130A uniquely optimized to provide the most efficient high RDS(ON)=1.7m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=2.7m (typical) @ VGS=4.5V switching power loss

Pb Free Producthttp://www.ncepower.com NCE30P30GNCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P30G uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. General Features VDS = -30V,ID = -30A RDS(ON)

http://www.ncepower.com NCEP40P30KNCE P-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP40P30K uses Super Trench technology that is V =-40V,I =-30ADS Duniquely optimized to provide the most efficient high frequencyR =22.5m (typical) @ V =-10VDS(ON) GSswitching performance. Both conduction and switching powerR =31.5m (typical) @ V =-4.5VDS(ON) G

http://www.ncepower.com NCEP40P30QNCE P-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP40P30Q uses Super Trench technology that is V =-40V,I =-30ADS Duniquely optimized to provide the most efficient high frequencyR =21.0m (typical) @ V =-10VDS(ON) GSswitching performance. Both conduction and switching powerR =32.0m (typical) @ V =-4.5VDS(ON) G

http://www.ncepower.com NCEP3040QNCE N-Channel Super Trench Power MOSFET Description The NCEP3040Q uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch

http://www.ncepower.comNCE40P30KNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE40P30K uses advanced trench technology anddesign to provide excellent R with low gate charge .ThisDS(ON)device is well suited for high current load applications.General Features V =-40V,I =-30A Schematic diagramDS DR

http://www.ncepower.com NCE01P30DNCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P30D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-30A RDS(ON)

http://www.ncepower.comNCE15P30KNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE15P30K uses advanced trench technology anddesign to provide excellent R with low gate charge. It canDS(ON)be used in a wide variety of applications.General Features V =-150V,I =-30A Schematic diagramDS DR

Pb Free Producthttp://www.ncepower.com NCE55P30KNCE P-Channel Enhancement Mode Power MOSFET Description The NCE55P30K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-55V,ID =-30A RDS(ON)

P3010BV N-Channel Enhancement Mode NIKO-SEM SOP-8 Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G100V 30m 5.8A G: GATE D: DRAIN S: SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V TA = 2

PNMDP30V60 N-Channel MOSFET Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary D (2) VDS(V) RDS(on)(m) ID(A) 30 8.3@VGS=10V 60G (1) S (3) Absolute maximum rating@25 Parameter Symbol Maximum Units Drain-Source Voltage VDS 30 VGate-Source Voltage VGS 20 V TA=25 60 Drai

PNM8P30V20 N-Channel 30-V(D-S) MOSFET Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary VDS(V) RDS(on)(m) ID(A) 30 3.7@ VGS=4.5V 23Internal Structure Top View (SOP-8) D S D 1 8 S 2 7 D 6 G 3 D S 5 4 D G S Absolute maximum rating@25 Parameter Symbol Maximum

PPM8P30V10 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D5678 MOSFET Product Summary VDS(V) RDS(on)() ID(A) G40.011 @ VGS=-10V -30 -11 0.015@ VGS=-4.5V S 21 3 Electrical characteristics per line@25( unless otherwise specified) Parameter Symbol Conditions Min. Typ.

PNM8P30V12 N-Channel MOSFET Description The N-channel MOSFET has been designed specifically to improve the D5678 overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low on-resistance and fast switching speed. G4 MOSFET Product Summary VDS(V) RDS(on)(m) I

PNMDP30V90 N-Channel MOSFET Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary D (2) VDS(V) RDS(on)(m) ID(A) 30 4@VGS=10V 80G (1) S (3) Absolute maximum rating@25 Parameter Symbol Maximum Units Drain-Source Voltage VDS 30 VGate-Source Voltage VGS 20 V TA=25 80 Drain

PS06P30SA 30V Single Channel PMOSEFT Revision : 1.0Update Date : Apr. 2011 ProsPower Microelectronics Co., LtdPS06P30SA 30V Single Channel PMOSFET 2. Applications 1. General Description PWM applicationsThe PS06P30SA uses advanced trench technology Load switchand design to provide excellent Rds(on) with low Power managementgate charge and operation with gate vol

PS04P30SA 30V Single Channel PMOSEFT Revision : 1.0Update Date : Apr. 2011 ProsPower Microelectronics Co., LtdPS04P30SA 30V Single Channel PMOSFET 2. Applications 1. General Description PWM applicationsThe PS04P30SA uses advanced trench technology Load switchand design to provide excellent Rds(on) with low Power managementgate charge and operation with gate vol

PS06P30DA 30V Dual Channel PMOSEFT Revision : 1.0Update Date : Apr. 2011 ProsPower Microelectronics Co., LtdPS06P30DA 30V Dual Channel PMOSFET 2. Applications 1. General Description PWM applicationsThe PS06P30DA uses advanced trench technology Load switchand design to provide excellent Rds(on) with low Power managementgate charge and operation with gate voltage

PS04P30SB 30V Single Channel PMOSEFT Revision : 1.0Update Date : Apr. 2011 ProsPower Microelectronics Co., LtdPS04P30SB 30V Single Channel PMOSFET 2. Applications 1. General Description PWM applicationsThe PS04P30SB uses advanced trench technology Load switchand design to provide excellent Rds(on) with low Power managementgate charge and operation with gate vol

December 2014 BVDSS = 40 V RDS(on) typ = 2.5m HRP30N04K ID = 230 A 40V N-Channel Trench MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Excellent Switching Characteristics 1.Gate 2. Drain 3. Source Unrivalled Gate Charge : 200 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 2.5 m (Typ.

STP3052D P Channel Enhancement Mode MOSFET -25.0A DESCRIPTION STP3052D is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application. Such as DC/DC converter

WM02P30ME P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -20V, I = -3A DS DR

ASDM30P30CTD-30V P-Channel MOSFETFeaturesProduct Summary Low RDS(ON) Fast switchingV -30 V DSS Green Device AvailableR 15 mDS(ON)-Typ.ApplicationI -30 A D MB / VGA / Vcore POL ApplicationsDFN3*3-8 P-MOSFETAbsolute Maximum Ratings (T =25C Unless Otherwise Noted)JSymbol Parameter Rating Unit VDSS Drain-Source Voltage -30 V VGSS Gate-

HSP3018B N-Ch 30V Fast Switching MOSFETs Description Product Summary The HSP3018B is the high cell density trenched VDS 30 V N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous RDS(ON),typ 2 m buck converter applications. ID 205 A The HSP3018B meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reli

TIP3055Silicon NPN Power TransistorsDESCRIPTION With TO-247 package Complement to type TIP2955 90 W at 25C case temperature 15 A continuous collector current APPLICATIONS Designed for generalpurpose switching and amplifier applications. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and symbol

SUPER-SEMISuper Junction Insulated Gate Bipolar Transistor600V Trench and Super Junction IGBTSI*30N60G21BRev. 0.91Jul. 2023www.supersemi.com.cnSIF30N60G21B/SIP30N60G21B/SIW30N60G21B/SIB30N60G21B600V Trench and Super Junction IGBTGeneral DescriptionSuper-Semi Trench and Super Junction IGBTs,VCE 600 Vdesigned according to the super junction (SJ)IC 30 Atechnology. Th

SUPER-SEMISuper Junction Insulated Gate Bipolar Transistor650V Trench and Super Junction IGBTSI*30N65G21FRev. 0.91Jul. 2023www.supersemi.com.cnSIF30N65G21F/SIP30N65G21F/SIW30N65G21F/SIB30N65G21F650V Trench and Super Junction IGBTGeneral DescriptionSuper-Semi Trench and Super Junction IGBTs,VCE 650 Vdesigned according to the super junction (SJ)IC 30 Atechnology. Th

P-Channel Enhancement Mode MOSFETChannel Enhancement Mode MOSFET Feature -30V/-3.8A, RDS(ON) =55m(MAX) @VGS = -10V.10V. RDS(ON) = 70m(MAX) @VGS = -4.5V.4.5V. RDS(ON) =120m(MAX) @VGS = -2.5V.2.5V. Super High dense cell design for extremely low RSuper High dense cell design for extremely low RDS(ON) Reliable and Rugged SOT-23 for Surface Mount Package

Sep 2015SED30P30MP-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesAdvanced trench technology to provide For a single MOSFETexcellent RDS(ON), low gate charge and low V = -30VDSoperation voltage. This device is suitable for R =8.5m @V =-10VDS(ON) GSusing as a load switch or in PWM applications. Simple Drive Requirement Small Packa

STP30NF10www.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.032 at VGS = 10 V45RoHS*100 Low Thermal Resistance Package0.035 at VGS = 4.5 V40COMPLIANTDTO-220AB GSG D STop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, u

DMP3010LPSwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFETRoHS 0.004 at VGS = - 10 V - 120COMPLIANT - 30 130 nC 100 % Rg Tested0.006 at VGS = - 4.5 V - 100APPLICATIONS Notebook- Load SwitchSDFN5X6Top ViewTop View Bottom View18G27364

STP30NF20www.VBsemi.twN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSVDS (V) RDS(on) () ID (A) Qg (Typ) 175 C Junction TemperatureRoHS0.060 at VGS = 10 V COMPLIANT 40 New Low Thermal Resistance Package200 950.070 at VGS = 6 V38.7 Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-220AB IndustrialDG

VBC6P3033www.VBsemi.comDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ()ID (A) TrenchFET Power MOSFETs 0.036 at VGS = - 10 V - 5.2- 30RoHS0.055 at VGS = - 4.5 V - 4.2COMPLIANTAPPLICATIONS Load Switch Battery SwitchS1 S2TSSOP-8G1 G2D1 1 D28S1 2 S27S1 3 S26G1 4 G25Top ViewD1 D2

FQP30N06Lwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a, e Qg (Max)Definition Surface Mount0.024 at VGS = 10 V 5060 66 nC Available in Tape and Reel 0.028 at VGS = 4.5 V40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS Di

DMP3056LSD-13www.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.029 at VGS = - 10 V - 7.3 100 % UIS TestedRoHS- 30 17 nCCOMPLIANT0.039 at VGS = - 4.5 V - 6.3APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25To

STP30NF10FPwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A) 175 C Junction TemperatureRoHS0.034 at VGS = 10 V10050aCOMPLIANT Low Thermal Resistance Package 100 % Rg TestedAPPLICATIONS Isolated DC/DC ConvertersDTO-220 FULLPAKGSSDGN-Channel MOSFETABSOLUTE MA

RFP30P06www.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Max. ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.0600 at VGS = - 10 V- 30- 60 67 100 % Rg and UIS Tested0.0850 at VGS = - 4.5 V - 24 Compliant to RoHS Directive 2002/95/ECAPPLICATIONSSTO-220AB Power Swi

P3055LDGwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.007 at VGS = 10 V 5030 25 nC0.009 at VGS = 4.5 V 40APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D SSTop ViewN-Channel MOSFETABSOL

DMP3025LK3-13www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.033 at VGS = - 10 V - 26 100 % Rg TestedRoHS- 30 19 nCCOMPLIANT 100 % UIS Tested0.046 at VGS = - 4.5 V - 21APPLICATIONS Load Switch Notebook Adaptor SwitchSTO-252GG D SDTop View

RFP30N06LEwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a, e Qg (Max)Definition Surface Mount0.023 at VGS = 10 V 5060 66 nC Available in Tape and Reel 0.027 at VGS = 4.5 V40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS D

TTD30P10AT, TTP30P10AT Wuxi Unigroup Microelectronics Company 100V P-Channel Trench MOSFET FEATURES Trench Power MOSFET Technology Low RDS(ON) Low Gate Charge Optimized For Fast-switching Applications APPLICATIONS Load Switches Battery Switch Device Marking and Package Information Device Package Marking TTP30P10AT TO-220 30P10AT TTD30P10AT TO

TTB30P10AT,TTD30P10AT,TTP30P10AT Wuxi Unigroup Microelectronics CO.,LTD. 100V P-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS -100V Low RDS(ON) ID (at VGS =-10V) -30A Low Gate Charge RDS(ON) (at VGS =-10V)

isc P-Channel MOSFET Transistor DMP3028LK3FEATURESDrain Current I = -27A@ T =25D CDrain Source Voltage-: V = -30V(Min)DSSStatic Drain-Source On-Resistance: R = 25m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

INCHANGE Semiconductorisc Silicon NPN Power Transistor TIP3055DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h =20-70@I = 4AFE CCollector-Emitter Saturation Voltage-: V )= 1.1 V(Max)@ I = 4ACE(sat CComplement to Type TIP2955Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose

Isc N-Channel MOSFET Transistor STP30NF10FEATURESTypical R (on)=0.038DSApplication oriented characterizationEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh-efficiency DC-DC covertersMotor controlABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Dr

isc N-Channel MOSFET Transistor IRFP3077IIRFP3077FEATURESStatic drain-source on-resistance:RDS(on)3.3mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power SupplyHigh Speed Power SwitchingHard Switc

isc Silicon PNP Power Transistors TIP30ADESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)Collector-Emitter Saturation Voltage-: V = -0.7V(Max.)@I = -1.0ACE(sat) CComplement to Type TIP29AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifier and switching

INCHANGE Semiconductorisc N-Channel MOSFET Transistor STP30NF20FEATURESWith TO-220 packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSPFC stagesLCD & PDP TVPower supplySwitching applicationsABSOLUTE MAXIMU

isc P-Channel MOSFET Transistor DMP3010LK3FEATURESDrain Current I = -17A@ T =25D CDrain Source Voltage-: V = -30V(Min)DSSStatic Drain-Source On-Resistance: R = 8m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

isc N-Channel MOSFET Transistor IRFP3006IIRFP3006FEATURESStatic drain-source on-resistance:RDS(on) 2.5mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power SupplyHigh Speed Power SwitchingHard Swit

isc Silicon NPN Power Transistor TIP3055TDESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h =20-70@I = 4AFE CCollector-Emitter Saturation Voltage-: V )= 0.8V(Max)@ I = 4ACE(sat CComplement to Type TIP2955TMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose switching and amplifier

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP30NF10FPFEATURESTypical R (on)=0.038DSApplication oriented characterizationEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh-efficiency DC-DC covertersMotor controlABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

isc Silicon PNP Power Transistors TIP30DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -40V(Min)CEO(SUS)Collector-Emitter Saturation Voltage-: V = -0.7V(Max.)@I = -1.0ACE(sat) CComplement to Type TIP29Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifier and switchingap

Inchange Semiconductor Product Specification Silicon PNP Power Transistors TIP30/30A/30B/30C DESCRIPTION With TO-220C package Complement to type TIP29/29A/29B/29C APPLICATIONS For use in general purpose power amplifer and switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25)

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRLP3034IIRLP3034FEATURESStatic drain-source on-resistance:RDS(on)1.7mEnhancement mode:Vth =1.0 to 2.5V (VDS=VGS, ID=250A)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterru

isc Silicon PNP Power Transistors TIP30CDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -100V(Min)CEO(SUS)Collector-Emitter Saturation Voltage-: V = -0.7V(Max.)@I = -1.0ACE(sat) CComplement to Type TIP29CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifier and switching

isc Silicon PNP Power Transistors TIP30BDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -80V(Min)CEO(SUS)Collector-Emitter Saturation Voltage-: V = -0.7V(Max.)@I = -1.0ACE(sat) CComplement to Type TIP29BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifier and switching

INCHANGE Semiconductorisc Silicon NPN Power Transistors BUP30DESCRIPTIONLow Collector Saturation Voltage: V = 0.4V(Max)@ I =6ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers, high-speed inverters, converters,and other general high-current switching applicationsABSOLUTE MAXIMUM RATINGS(T

isc N-Channel MOSFET Transistor FKP300AFEATURESDrain Current I =30A@ T =25D CDrain Source Voltage-: V =300V(Min)DSSStatic Drain-Source On-Resistance: R = 65m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose