P303 datasheet и подбор замены

 0.1. Size:121K  motorola
 tp3034re.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by TP3034/D The RF Line NPN Silicon TP3034 RF Power Transistor The TP3034 is designed for 960 MHz cellular radio base stations in both analog and digital applications. It incoporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. Specified 24 Volts, 960 MH

 0.2. Size:117K  motorola
 tp3032re.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by TP3032/D The RF Line NPN Silicon TP3032 RF Power Transistor The TP3032 is designed for 26 volts, common emitter, 960 MHz base station amplifiers, for use in analog and digital systems. Specified 26 Volts, 960 MHz Characteristics Output Power 21 Watts Gain 7.5 dB min 21 W, 960 MHz RF POWER TRANSISTOR Sili

 0.3. Size:305K  international rectifier
 irlp3034pbf.pdf 

PD - 96230 IRLP3034PbF HEXFET Power MOSFET Applications D l DC Motor Drive VDSS 40V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 1.4m l Uninterruptible Power Supply max. 1.7m l High Speed Power Switching G ID (Silicon Limited) 327A l Hard Switched and High Frequency Circuits S ID (Package Limited) 195A Benefits l Optimized for Logic Level Drive D

 0.4. Size:53K  sanyo
 fp303.pdf 

Ordering number ENN4657 TR NPN Epitaxial Planar Silicon Transistor SBD Schottky Barrier Diode FP303 DC-DC Converter Applications Features Package Dimensions Composite type with NPN transistor and Schottoky unit mm barrier diode facilitates high-density mounting. 2099A The FP303 is composed of chips equivalent to the [FP303] 2SD1623 and SB05-05CP, which are placed in one 4.5

 0.5. Size:25K  siemens
 byp303.pdf 

BYP 303 FRED Diode Fast recovery epitaxial diode Soft recovery characteristics Type VRRM IFRMS trr Package Ordering Code BYP 303 1200V 65A 140ns TO-218 AD C67047-A2253-A2 Maximum Ratings Parameter Symbol Values Unit Mean forward current IFAV A TC = 90 C, D = 0.5 40 RMS forward current IFRMS 65 Surge forward current, sine halfwave, aperiodic IFSM Tj = 100 C, f = 50 Hz 170

 0.6. Size:431K  siemens
 bup303.pdf 

BUP 303 IGBT Preliminary data Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated Pin 1 Pin 2 Pin 3 G C E Type VCE IC Package Ordering Code BUP 303 1000V 23A TO-218 AB Q67078-A4202-A2 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1000 V Collector-gate voltage VCGR RGE = 20 k 1000 Gate-

 0.7. Size:305K  diodes
 dmp3037lss.pdf 

DMP3037LSS P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID V(BR)DSS RDS(on) max Low Input Capacitance TC = +25 C Fast Switching Speed 32m @ VGS = -10V -5.8A -30V Low Input/Output Leakage 50m @ VGS = -4.5V -4.6A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Devi

 0.8. Size:268K  diodes
 dmp3030sn.pdf 

DMP3030SN P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case SC-59 Low Gate Threshold Voltage Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture sensitivity Level 1 per J-STD-020C Fast Switching Speed Lead Free By

 0.9. Size:382K  diodes
 dmp3036ssd.pdf 

DMP3036SSD P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-Resistance V(BR)DSS RDS(on) max TC = +25 C Low Input Capacitance 20m @ VGS = -10V -18.0A -30V Fast Switching Speed -15.0A 29m @ VGS = -5V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description

 0.10. Size:194K  diodes
 dmp3035sfg.pdf 

DMP3035SFG 30V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized ID max V(BR)DSS RDS(ON) max Small form factor thermally efficient package enables higher TA = 25 C density end products 20m @ VGS = -10V -9.5 A Occupies just 33% of the board area occupied by SO-8 enabling -

 0.11. Size:371K  diodes
 dmp3036sss.pdf 

 0.12. Size:420K  diodes
 dmp3036sfg.pdf 

DMP3036SFG 30V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits ID max Low RDS(ON) ensures on state losses are minimized. V(BR)DSS RDS(ON) max TA = +25 C Small form factor thermally efficient package enables higher density end products. 20m @ VGS = -10V - 8.7 A -30V Occupies just 33% of the board area occupied by SO-8 enab

 0.13. Size:169K  diodes
 dmp3035lss.pdf 

 0.14. Size:537K  diodes
 dmp3036sfv.pdf 

DMP3036SFV 30V P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (Type UX) Product Summary Features Low RDS(ON) Ensures On State Losses Are Minimized ID Max BVDSS RDS(ON) Max Small Form Factor Thermally Efficient Package Enables Higher TC = +25 C Density End Products 20m @ VGS = -10V Occupies Just 33% of The Board Area Occupied by SO-8 -30V -30A 29m

 0.15. Size:202K  onsemi
 ntmsd3p303r2-d.pdf 

NTMSD3P303R2 FETKY P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package Features High Efficiency Components in a Single SO-8 Package http //onsemi.com High Density Power MOSFET with Low RDS(on), MOSFET Schottky Diode with Low VF -3.05 AMPERES Independent Pin-Outs for MOSFET and Schottky Die -30 VOLTS Allowing for Flexibility in Application Use

 0.16. Size:1381K  russia
 kp303 2p303.pdf 

 0.17. Size:941K  russia
 p302 p303a p304 p306a.pdf 

 0.18. Size:57K  tysemi
 dmp3030sn.pdf 

Product specification DMP3030SN Features Mechanical Data Low On-Resistance Case SC59 Low Gate Threshold Voltage Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture sensitivity Level 1 per J-STD-020C Fast Switching Speed Terminals Finish Matte Tin annealed ove

 0.19. Size:361K  cn vbsemi
 vbc6p3033.pdf 

VBC6P3033 www.VBsemi.com Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( )ID (A) TrenchFET Power MOSFETs 0.036 at VGS = - 10 V - 5.2 - 30 RoHS 0.055 at VGS = - 4.5 V - 4.2 COMPLIANT APPLICATIONS Load Switch Battery Switch S1 S2 TSSOP-8 G1 G2 D1 1 D2 8 S1 2 S2 7 S1 3 S2 6 G1 4 G2 5 Top View D1 D2

 0.20. Size:243K  inchange semiconductor
 irlp3034.pdf 

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRLP3034 IIRLP3034 FEATURES Static drain-source on-resistance RDS(on) 1.7m Enhancement mode Vth =1.0 to 2.5V (VDS=VGS, ID=250 A) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterru