P303 Datasheet and Replacement

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby TP3034/DThe RF LineNPN SiliconTP3034RF Power TransistorThe TP3034 is designed for 960 MHz cellular radio base stations in bothanalog and digital applications. It incoporates high value emitter ballastresistors, gold metallizations and offers a high degree of reliability andruggedness. Specified 24 Volts, 960 MH

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby TP3032/DThe RF LineNPN SiliconTP3032RF Power TransistorThe TP3032 is designed for 26 volts, common emitter, 960 MHz base stationamplifiers, for use in analog and digital systems. Specified 26 Volts, 960 MHz CharacteristicsOutput Power 21 WattsGain 7.5 dB min21 W, 960 MHzRF POWER TRANSISTOR Sili

PD - 96230IRLP3034PbFHEXFET Power MOSFETApplicationsDl DC Motor DriveVDSS 40Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.1.4ml Uninterruptible Power Supply max. 1.7ml High Speed Power SwitchingGID (Silicon Limited) 327Al Hard Switched and High Frequency CircuitsSID (Package Limited) 195ABenefitsl Optimized for Logic Level Drive D

Ordering number:ENN4657TR:NPN Epitaxial Planar Silicon TransistorSBD:Schottky Barrier DiodeFP303DC-DC Converter ApplicationsFeatures Package Dimensions Composite type with NPN transistor and Schottokyunit:mmbarrier diode facilitates high-density mounting.2099A The FP303 is composed of chips equivalent to the[FP303]2SD1623 and SB05-05CP, which are placed in one4.5

BYP 303FRED Diode Fast recovery epitaxial diode Soft recovery characteristicsType VRRM IFRMS trr Package Ordering CodeBYP 303 1200V 65A 140ns TO-218 AD C67047-A2253-A2Maximum RatingsParameter Symbol Values UnitMean forward current IFAV ATC = 90 C, D = 0.5 40RMS forward current IFRMS 65Surge forward current, sine halfwave, aperiodic IFSMTj = 100 C, f = 50 Hz 170

BUP 303IGBTPreliminary data Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche ratedPin 1 Pin 2 Pin 3G C EType VCE IC Package Ordering CodeBUP 303 1000V 23A TO-218 AB Q67078-A4202-A2Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1000 VCollector-gate voltage VCGRRGE = 20 k 1000Gate-

DMP3037LSSP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-ResistanceIDV(BR)DSS RDS(on) max Low Input Capacitance TC = +25C Fast Switching Speed 32m @ VGS = -10V -5.8A -30V Low Input/Output Leakage 50m @ VGS = -4.5V -4.6A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Devi

DMP3030SNP-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case: SC-59 Low Gate Threshold Voltage Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture sensitivity: Level 1 per J-STD-020C Fast Switching Speed Lead Free By

DMP3036SSD P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-Resistance V(BR)DSS RDS(on) max TC = +25C Low Input Capacitance 20m @ VGS = -10V -18.0A -30V Fast Switching Speed -15.0A 29m @ VGS = -5V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description

DMP3035SFG30V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized ID max V(BR)DSS RDS(ON) max Small form factor thermally efficient package enables higher TA = 25C density end products 20m @ VGS = -10V -9.5 A Occupies just 33% of the board area occupied by SO-8 enabling -

DMP3036SSS P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-Resistance V(BR)DSS RDS(on) max TC = +25C Low Input Capacitance 20m @ VGS = -10V -19.5A -30V Fast Switching Speed -16.2A 29m @ VGS = -5V Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description Halogen and Antimony Free.

DMP3036SFG 30V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits ID max Low RDS(ON) ensures on state losses are minimized. V(BR)DSS RDS(ON) max TA = +25C Small form factor thermally efficient package enables higher density end products. 20m @ VGS = -10V - 8.7 A -30V Occupies just 33% of the board area occupied by SO-8 enab

DMP3035LSSSINGLE P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SO-8 14m @ VGS = -20V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 18m @ VGS = -10V Moisture Sensitivity: Level 1 per J-STD-020

DMP3036SFV 30V P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (Type UX) Product Summary Features Low RDS(ON) Ensures On State Losses Are Minimized ID Max BVDSS RDS(ON) Max Small Form Factor Thermally Efficient Package Enables Higher TC = +25C Density End Products 20m @ VGS = -10V Occupies Just 33% of The Board Area Occupied by SO-8 -30V -30A 29m

NTMSD3P303R2FETKYP-Channel Enhancement-ModePower MOSFET and Schottky DiodeDual SO-8 PackageFeatures High Efficiency Components in a Single SO-8 Package http://onsemi.com High Density Power MOSFET with Low RDS(on),MOSFETSchottky Diode with Low VF-3.05 AMPERES Independent Pin-Outs for MOSFET and Schottky Die-30 VOLTSAllowing for Flexibility in Application Use

Product specificationDMP3030SNFeatures Mechanical Data Low On-Resistance Case: SC59 Low Gate Threshold Voltage Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture sensitivity: Level 1 per J-STD-020C Fast Switching Speed Terminals: Finish Matte Tin annealed ove

VBC6P3033www.VBsemi.comDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ()ID (A) TrenchFET Power MOSFETs 0.036 at VGS = - 10 V - 5.2- 30RoHS0.055 at VGS = - 4.5 V - 4.2COMPLIANTAPPLICATIONS Load Switch Battery SwitchS1 S2TSSOP-8G1 G2D1 1 D28S1 2 S27S1 3 S26G1 4 G25Top ViewD1 D2

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRLP3034IIRLP3034FEATURESStatic drain-source on-resistance:RDS(on)1.7mEnhancement mode:Vth =1.0 to 2.5V (VDS=VGS, ID=250A)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterru