P403 datasheet, аналоги, основные параметры
Наименование производителя: P403 📄📄
Тип материала: Ge
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.1 W
Макcимально допустимое напряжение коллектор-база (Ucb): 10 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 10 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 1 V
Макcимальный постоянный ток коллектора (Ic): 0.02 A
Предельная температура PN-перехода (Tj): 75 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 120 MHz
Ёмкость коллекторного перехода (Cc): 10 pf
Статический коэффициент передачи тока (hFE): 30
Аналоги (замена) для P403
- подборⓘ биполярного транзистора по параметрам
P403 даташит
0.1. Size:75K 1
ap4034gyt-hf.pdf 
Advanced Power Electronics Corp. AP4034GYT-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement D BV 30V Good Thermal Performance DSS G Low On-resistance RDS(ON) 9m RoHS-compliant, halogen-free ID 15.5A S Description D D D Advanced Power MOSFETs from APEC provide the designer with D the best combination of fast switching, ruggedized device design, low on
0.2. Size:392K fairchild semi
fdp4030l fdb4030l.pdf 
March 1998 FDP4030L / FDB4030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect 20 A, 30 V. RDS(ON) = 0.035 @ VGS=10 V transistors are produced using Fairchild's proprietary, RDS(ON) = 0.055 @ VGS=4.5V. high cell density, DMOS technology. This very high Critical DC electrical parame
0.3. Size:149K siemens
bup403.pdf 
BUP 403 IGBT Preliminary data Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated Pin 1 Pin 2 Pin 3 G C E Type VCE IC Package Ordering Code BUP 403 600V 42A TO-220 AB C67078-A4406-A2 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 600 V Collector-gate voltage VCGR RGE = 20 k 600 Gate-emi
0.5. Size:59K ape
ap4036agyt-hf.pdf 
AP4036AGYT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D Small Size & Lower Profile RDS(ON) 11m RoHS Compliant & Halogen-Free ID 14A G S D D Description D D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device desig
0.6. Size:96K ape
ap4034gm-hf.pdf 
AP4034GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30V D D D Simple Drive Requirement RDS(ON) 9m D Fast Switching Characteristic ID 13A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast
0.7. Size:186K ape
ap4034gh.pdf 
AP4034GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID 41A G RoHS Compliant & Halogen-Free S Description AP4034 series are from Advanced Power innovated des
0.8. Size:96K ape
ap4034agm-hf.pdf 
AP4034AGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30V D D D Simple Drive Requirement RDS(ON) 9m D Fast Switching Characteristic ID 13A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fas
0.9. Size:174K ape
ap4034gm.pdf 
AP4034GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30V D D D Simple Drive Requirement RDS(ON) 9m D Fast Switching Characteristic ID 13A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs fro
0.10. Size:97K ape
ap4034gyt-hf.pdf 
AP4034GYT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D Small Size & Lower Profile RDS(ON) 9m RoHS Compliant & Halogen-Free ID 15.5A G S D D Description D D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device desig
0.11. Size:116K ape
ap4036agyt.pdf 
AP4036AGYT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D Small Size & Lower Profile RDS(ON) 11m RoHS Compliant & Halogen-Free ID 14A G S D D Description D D AP4036A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-r
0.12. Size:94K ape
ap4034gmt-hf.pdf 
AP4034GMT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 8m Low On-resistance ID 44.3A G RoHS Compliant & Halogen-Free S D D D Description D AP4034 series are from Advanced Power innovated design and silicon process technology to achieve t
0.13. Size:60K ape
ap4034asgyt-hf.pdf 
AP4034ASGYT-HF Halogen-Free Product Advanced Power N-CHANNEL MOSFET WITH SCHOTTKY Electronics Corp. DIODE D Simple Drive Requirement BVDSS 30V Good Recovery Time RDS(ON) 7.2m Schottky Diode Small Size & Lower Profile ID 17.5A G RoHS Compliant & Halogen-Free S D D Description D AP4034A series are from Advanced Power innovated design and silicon D process techn
0.14. Size:57K ape
ap4034gh-hf.pdf 
AP4034GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID 41A G RoHS Compliant & Halogen-Free S Description AP4034 series are from Advanced Power innovated design and G D silicon process technology to achieve the lowes
0.15. Size:59K ape
ap4036agm-hf.pdf 
AP4036AGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30V D D D Simple Drive Requirement RDS(ON) 11m D Fast Switching Characteristic ID 11.8A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of
0.16. Size:75K ape
ap4034gyt-hf-3.pdf 
Advanced Power Electronics Corp. AP4034GYT-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement D BV 30V Good Thermal Performance DSS G Low On-resistance RDS(ON) 9m RoHS-compliant, halogen-free ID 15.5A S Description D D D Advanced Power MOSFETs from APEC provide the designer with D the best combination of fast switching, ruggedized device design, low on
0.17. Size:97K ape
ap4034agyt-hf.pdf 
AP4034AGYT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D Small Size & Lower Profile RDS(ON) 9m RoHS Compliant & Halogen-Free ID 15.5A G S D D Description D D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device desi
0.18. Size:978K ncepower
nce60np4035k.pdf 
NCE60NP4035K http //www.ncepower.com NCE N&P-Channel complementary Power MOSFET Description The NCE60NP4035K uses advanced trench technology and design to provide excellent R with low gate DS(ON) charge. It can be used in a wide variety of applications. General Features Schematic diagram N channel V =60V,I =40A DS D R
0.19. Size:413K ncepower
nce30np4030g.pdf 
http //www.ncepower.com NCE30NP4030G NCE N&P-Channel complementary Power MOSFET Description The NCE30NP4030G uses advanced trench technology to provide excellent RDS(ON) and low gate charge.This device is suitable for use in inverter and other applications. Genera Features N-channel P-channel VDS = 30V,ID = 40A VDS = -30V,ID =- 30A Schematic diagram RDS(ON)
Другие транзисторы: P307A, P307B, P307G, P307V, P308, P309, P401, P402, TIP41C, P403A, P416, P416A, P416B, P417, P417A, P417B, P422
