P403 Datasheet and Replacement
Type Designator: P403
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.1
W
Maximum Collector-Base Voltage |Vcb|: 10
V
Maximum Collector-Emitter Voltage |Vce|: 10
V
Maximum Emitter-Base Voltage |Veb|: 1
V
Maximum Collector Current |Ic max|: 0.02
A
Max. Operating Junction Temperature (Tj): 75
°C
Transition Frequency (ft): 120
MHz
Collector Capacitance (Cc): 10
pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
- BJT Cross-Reference Search
P403 Datasheet (PDF)
0.1. Size:75K 1
ap4034gyt-hf.pdf 

Advanced Power Electronics Corp.AP4034GYT-HF-3N-channel Enhancement-mode Power MOSFETSimple Drive RequirementDBV 30VGood Thermal PerformanceDSSGLow On-resistance RDS(ON) 9mRoHS-compliant, halogen-free ID 15.5ASDescriptionDDDAdvanced Power MOSFETs from APEC provide the designer withDthe best combination of fast switching, ruggedized device design,low on
0.2. Size:392K fairchild semi
fdp4030l fdb4030l.pdf 

March 1998 FDP4030L / FDB4030L N-Channel Logic Level Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese N-Channel enhancement mode power field effect20 A, 30 V. RDS(ON) = 0.035 @ VGS=10 Vtransistors are produced using Fairchild's proprietary, RDS(ON) = 0.055 @ VGS=4.5V.high cell density, DMOS technology. This very highCritical DC electrical parame
0.3. Size:149K siemens
bup403.pdf 

BUP 403IGBTPreliminary data Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche ratedPin 1 Pin 2 Pin 3G C EType VCE IC Package Ordering CodeBUP 403 600V 42A TO-220 AB C67078-A4406-A2Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 600 VCollector-gate voltage VCGRRGE = 20 k 600Gate-emi
0.5. Size:59K ape
ap4036agyt-hf.pdf 

AP4036AGYT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Size & Lower Profile RDS(ON) 11m RoHS Compliant & Halogen-Free ID 14AGSDDDescriptionDDAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized device desig
0.6. Size:96K ape
ap4034gm-hf.pdf 

AP4034GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30VDDD Simple Drive Requirement RDS(ON) 9mD Fast Switching Characteristic ID 13AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide the designer with the bestcombination of fast
0.7. Size:186K ape
ap4034gh.pdf 

AP4034GH-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID 41AG RoHS Compliant & Halogen-FreeSDescriptionAP4034 series are from Advanced Power innovated des
0.8. Size:96K ape
ap4034agm-hf.pdf 

AP4034AGM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30VDDD Simple Drive Requirement RDS(ON) 9mD Fast Switching Characteristic ID 13AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide the designer with the bestcombination of fas
0.9. Size:174K ape
ap4034gm.pdf 

AP4034GM-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30VDDD Simple Drive Requirement RDS(ON) 9mD Fast Switching Characteristic ID 13AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs fro
0.10. Size:97K ape
ap4034gyt-hf.pdf 

AP4034GYT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Size & Lower Profile RDS(ON) 9m RoHS Compliant & Halogen-Free ID 15.5AGSDDDescriptionDDAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized device desig
0.11. Size:116K ape
ap4036agyt.pdf 

AP4036AGYT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Size & Lower Profile RDS(ON) 11m RoHS Compliant & Halogen-Free ID 14AGSDDDescriptionDDAP4036A series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest possible on-r
0.12. Size:94K ape
ap4034gmt-hf.pdf 

AP4034GMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 8m Low On-resistance ID 44.3AG RoHS Compliant & Halogen-FreeS DDDDescriptionDAP4034 series are from Advanced Power innovated design and siliconprocess technology to achieve t
0.13. Size:60K ape
ap4034asgyt-hf.pdf 

AP4034ASGYT-HFHalogen-Free ProductAdvanced Power N-CHANNEL MOSFET WITH SCHOTTKYElectronics Corp. DIODED Simple Drive Requirement BVDSS 30V Good Recovery Time RDS(ON) 7.2mSchottky Diode Small Size & Lower Profile ID 17.5AG RoHS Compliant & Halogen-FreeSDDDescriptionDAP4034A series are from Advanced Power innovated design and siliconDprocess techn
0.14. Size:57K ape
ap4034gh-hf.pdf 

AP4034GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID 41AG RoHS Compliant & Halogen-FreeSDescriptionAP4034 series are from Advanced Power innovated design andGDsilicon process technology to achieve the lowes
0.15. Size:59K ape
ap4036agm-hf.pdf 

AP4036AGM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30VDDD Simple Drive Requirement RDS(ON) 11mD Fast Switching Characteristic ID 11.8AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide the designer with the bestcombination of
0.16. Size:75K ape
ap4034gyt-hf-3.pdf 

Advanced Power Electronics Corp.AP4034GYT-HF-3N-channel Enhancement-mode Power MOSFETSimple Drive RequirementDBV 30VGood Thermal PerformanceDSSGLow On-resistance RDS(ON) 9mRoHS-compliant, halogen-free ID 15.5ASDescriptionDDDAdvanced Power MOSFETs from APEC provide the designer withDthe best combination of fast switching, ruggedized device design,low on
0.17. Size:97K ape
ap4034agyt-hf.pdf 

AP4034AGYT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Size & Lower Profile RDS(ON) 9m RoHS Compliant & Halogen-Free ID 15.5AGSDDDescriptionDDAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized device desi
0.18. Size:978K ncepower
nce60np4035k.pdf 

NCE60NP4035Khttp://www.ncepower.comNCE N&P-Channel complementary Power MOSFETDescriptionThe NCE60NP4035K uses advanced trench technologyand design to provide excellent R with low gateDS(ON)charge. It can be used in a wide variety of applications.General FeaturesSchematic diagramN channel V =60V,I =40ADS DR
0.19. Size:413K ncepower
nce30np4030g.pdf 

http://www.ncepower.com NCE30NP4030GNCE N&P-Channel complementary Power MOSFET Description The NCE30NP4030G uses advanced trench technology to provide excellent RDS(ON) and low gate charge.This device is suitable for use in inverter and other applications. Genera Features N-channel P-channel VDS = 30V,ID = 40A VDS = -30V,ID =- 30A Schematic diagram RDS(ON)
Datasheet: 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.
History: 2N2749
| MRF5812
| 2STC2510
| K2117A
| 3CA4F
| MCH3245
| CDB550B
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