P403 Datasheet. Specs and Replacement

Type Designator: P403  📄📄 

Material of Transistor: Ge

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.1 W

Maximum Collector-Base Voltage |Vcb|: 10 V

Maximum Collector-Emitter Voltage |Vce|: 10 V

Maximum Emitter-Base Voltage |Veb|: 1 V

Maximum Collector Current |Ic max|: 0.02 A

Max. Operating Junction Temperature (Tj): 75 °C

Electrical Characteristics

Transition Frequency (ft): 120 MHz

Collector Capacitance (Cc): 10 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

 P403 Substitution

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P403 datasheet

 0.1. Size:75K  1

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P403

Advanced Power Electronics Corp. AP4034GYT-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement D BV 30V Good Thermal Performance DSS G Low On-resistance RDS(ON) 9m RoHS-compliant, halogen-free ID 15.5A S Description D D D Advanced Power MOSFETs from APEC provide the designer with D the best combination of fast switching, ruggedized device design, low on... See More ⇒

 0.2. Size:392K  fairchild semi

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P403

March 1998 FDP4030L / FDB4030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect 20 A, 30 V. RDS(ON) = 0.035 @ VGS=10 V transistors are produced using Fairchild's proprietary, RDS(ON) = 0.055 @ VGS=4.5V. high cell density, DMOS technology. This very high Critical DC electrical parame... See More ⇒

 0.3. Size:149K  siemens

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P403

BUP 403 IGBT Preliminary data Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated Pin 1 Pin 2 Pin 3 G C E Type VCE IC Package Ordering Code BUP 403 600V 42A TO-220 AB C67078-A4406-A2 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 600 V Collector-gate voltage VCGR RGE = 20 k 600 Gate-emi... See More ⇒

 0.4. Size:541K  russia

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P403

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Detailed specifications: P307A, P307B, P307G, P307V, P308, P309, P401, P402, TIP41C, P403A, P416, P416A, P416B, P417, P417A, P417B, P422

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