P606 datasheet и подбор замены

 0.1. Size:79K  renesas
 rjp6065dpm.pdf 

Preliminary Datasheet RJP6065DPM R07DS0204EJ0100 Silicon N Channel IGBT Rev.1.00 High Speed Power Switching Nov 19, 2010 Features Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (IC = 40 A, VGE = 15V, Ta = 25 C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding Outline RENESAS Package code PRSS0003ZA-A (Package

 0.2. Size:82K  renesas
 r07ds0204ej rjp6065dpm.pdf 

Preliminary Datasheet RJP6065DPM R07DS0204EJ0100 Silicon N Channel IGBT Rev.1.00 High Speed Power Switching Nov 19, 2010 Features Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (IC = 40 A, VGE = 15V, Ta = 25 C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding Outline RENESAS Package code PRSS0003ZA-A (Package

 0.3. Size:360K  fairchild semi
 ndp6060l ndb6060l.pdf 

April 1996 NDP6060L / NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features 48A, 60V. RDS(ON) = 0.025 @ VGS = 5V. These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's Low drive requirements allowing operation directly from logic proprietary, high cell density, DMOS technology. This

 0.4. Size:360K  fairchild semi
 ndp6060 ndb6060.pdf 

March 1996 NDP6060 / NDB6060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect 48A, 60V. RDS(ON) = 0.025 @ VGS=10V. transistors are produced using Fairchild's proprietary, high Critical DC electrical parameters specified at elevated cell density, DMOS technology. This very high density temperature.

 0.5. Size:116K  njs
 ndp605a ndp605b ndp606a ndp606b.pdf 

 0.6. Size:508K  onsemi
 ndp6060l ndb6060l.pdf 

NDP6060L / NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description 48A, 60V. RDS(ON) = 0.025 @ VGS = 5V. Low drive requirements allowing operation directly from logic These logic level N-Channel enhancement mode power drivers. VGS(TH)

 0.7. Size:474K  onsemi
 ndp6060 ndb6060.pdf 

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.8. Size:1177K  russia
 p605a p606a.pdf 

 0.9. Size:399K  cet
 cep6060l ceb6060l.pdf 

CEP6060L/CEB6060L N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 52.4A,RDS(ON) = 21m @VGS = 10V. RDS(ON) = 25m @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES S TO-263(DD-PAK) TO-220 ABSOLUTE MAXIMUM RATINGS Tc =

 0.10. Size:420K  cet
 cep6060n ceb6060n.pdf 

CEP6060N/CEB6060N N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 42A, RDS(ON) = 25m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Pa

 0.11. Size:669K  ncepower
 ncep6060agu.pdf 

http //www.ncepower.com NCEP6060AGU NCE N-Channel Super Trench Power MOSFET Description The NCEP6060AGU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-frequency swit

 0.12. Size:688K  ncepower
 ncep6060gu.pdf 

 0.13. Size:993K  winsok
 wsp6064.pdf 

WSP6064 N-Channel MOSFET General Description Product Summery The WSP6064 is the highest performance trench BVDSS RDSON ID N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge 33m 60V 6.8A for most of the synchronous buck converter applications . Applications The WSP6064 meet the RoHS and Green Product requirement , 100% EAS guarant

 0.14. Size:653K  winsok
 wsp6067.pdf 

WSP6067 N&P-Channel MOSFET General Description Product Summery The WSP6067 is the highest performance trench BVDSS RDSON ID N-ch and P-ch MOSFET with extreme high cell density , which provide excellent RDSON and 60V 26m 6.5A gate charge for most of the synchronous buck -60V 60m -4.5A converter applications . The WSP6067 meet the RoHS and Green Applications Product requi