P606 Datasheet. Specs and Replacement
Type Designator: P606 📄📄
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 75 °C
Electrical Characteristics
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 130 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
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P606 datasheet
0.1. Size:79K renesas
rjp6065dpm.pdf 
Preliminary Datasheet RJP6065DPM R07DS0204EJ0100 Silicon N Channel IGBT Rev.1.00 High Speed Power Switching Nov 19, 2010 Features Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (IC = 40 A, VGE = 15V, Ta = 25 C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding Outline RENESAS Package code PRSS0003ZA-A (Package ... See More ⇒
0.2. Size:82K renesas
r07ds0204ej rjp6065dpm.pdf
Preliminary Datasheet RJP6065DPM R07DS0204EJ0100 Silicon N Channel IGBT Rev.1.00 High Speed Power Switching Nov 19, 2010 Features Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (IC = 40 A, VGE = 15V, Ta = 25 C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding Outline RENESAS Package code PRSS0003ZA-A (Package ... See More ⇒
0.3. Size:360K fairchild semi
ndp6060l ndb6060l.pdf
April 1996 NDP6060L / NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features 48A, 60V. RDS(ON) = 0.025 @ VGS = 5V. These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's Low drive requirements allowing operation directly from logic proprietary, high cell density, DMOS technology. This... See More ⇒
0.4. Size:360K fairchild semi
ndp6060 ndb6060.pdf
March 1996 NDP6060 / NDB6060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect 48A, 60V. RDS(ON) = 0.025 @ VGS=10V. transistors are produced using Fairchild's proprietary, high Critical DC electrical parameters specified at elevated cell density, DMOS technology. This very high density temperature. ... See More ⇒
0.6. Size:508K onsemi
ndp6060l ndb6060l.pdf
NDP6060L / NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description 48A, 60V. RDS(ON) = 0.025 @ VGS = 5V. Low drive requirements allowing operation directly from logic These logic level N-Channel enhancement mode power drivers. VGS(TH) ... See More ⇒
0.7. Size:474K onsemi
ndp6060 ndb6060.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
0.9. Size:399K cet
cep6060l ceb6060l.pdf
CEP6060L/CEB6060L N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 52.4A,RDS(ON) = 21m @VGS = 10V. RDS(ON) = 25m @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES S TO-263(DD-PAK) TO-220 ABSOLUTE MAXIMUM RATINGS Tc = ... See More ⇒
0.10. Size:420K cet
cep6060n ceb6060n.pdf
CEP6060N/CEB6060N N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 42A, RDS(ON) = 25m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Pa... See More ⇒
0.11. Size:669K ncepower
ncep6060agu.pdf
http //www.ncepower.com NCEP6060AGU NCE N-Channel Super Trench Power MOSFET Description The NCEP6060AGU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-frequency swit... See More ⇒
0.13. Size:993K winsok
wsp6064.pdf
WSP6064 N-Channel MOSFET General Description Product Summery The WSP6064 is the highest performance trench BVDSS RDSON ID N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge 33m 60V 6.8A for most of the synchronous buck converter applications . Applications The WSP6064 meet the RoHS and Green Product requirement , 100% EAS guarant... See More ⇒
0.14. Size:653K winsok
wsp6067.pdf
WSP6067 N&P-Channel MOSFET General Description Product Summery The WSP6067 is the highest performance trench BVDSS RDSON ID N-ch and P-ch MOSFET with extreme high cell density , which provide excellent RDSON and 60V 26m 6.5A gate charge for most of the synchronous buck -60V 60m -4.5A converter applications . The WSP6067 meet the RoHS and Green Applications Product requi... See More ⇒
Detailed specifications: P417, P417A, P417B, P422, P423, P6009, P605, P605A, S8050, P606A, P607, P607A, P608, P608A, P609, P609A, P633567
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