P606 Datasheet, Equivalent, Cross Reference Search

Preliminary Datasheet RJP6065DPM R07DS0204EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching Nov 19, 2010Features Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (IC = 40 A, VGE = 15V, Ta = 25C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding Outline RENESAS Package code: PRSS0003ZA-A(Package

Preliminary Datasheet RJP6065DPM R07DS0204EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching Nov 19, 2010Features Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (IC = 40 A, VGE = 15V, Ta = 25C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding Outline RENESAS Package code: PRSS0003ZA-A(Package

April 1996 NDP6060L / NDB6060LN-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features48A, 60V. RDS(ON) = 0.025 @ VGS = 5V. These logic level N-Channel enhancement mode powerfield effect transistors are produced using Fairchild'sLow drive requirements allowing operation directly from logicproprietary, high cell density, DMOS technology. This

March 1996 NDP6060 / NDB6060 N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese N-Channel enhancement mode power field effect 48A, 60V. RDS(ON) = 0.025 @ VGS=10V. transistors are produced using Fairchild's proprietary, highCritical DC electrical parameters specified at elevatedcell density, DMOS technology. This very high densitytemperature.

NDP6060L / NDB6060LN-Channel Logic Level Enhancement Mode Field Effect TransistorFeaturesGeneral Description48A, 60V. RDS(ON) = 0.025 @ VGS = 5V.Low drive requirements allowing operation directly from logicThese logic level N-Channel enhancement mode power drivers. VGS(TH)

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

CEP6060L/CEB6060LN-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 52.4A,RDS(ON) = 21m @VGS = 10V. RDS(ON) = 25m @VGS = 5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability. DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESSTO-263(DD-PAK)TO-220ABSOLUTE MAXIMUM RATINGS Tc =

CEP6060N/CEB6060NN-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 42A, RDS(ON) = 25m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedPa

http://www.ncepower.comNCEP6060AGUNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP6060AGU uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-frequency swit

http://www.ncepower.com NCEP6060GUNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP6060GU uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high V =60V,I =60ADS Dfrequency switching performance. Both conduction and R =5.6m (typical) @ V =10VDS(ON) GSswitching power losses are minimized due to an extremely low

WSP6064N-Channel MOSFETGeneral Description Product SummeryThe WSP6064 is the highest performance trench BVDSS RDSON ID N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge 33m 60V 6.8A for most of the synchronous buck converter applications . Applications The WSP6064 meet the RoHS and Green Product requirement , 100% EAS guarant

WSP6067N&P-Channel MOSFETGeneral Description Product SummeryThe WSP6067 is the highest performance trench BVDSS RDSON ID N-ch and P-ch MOSFET with extreme high cell density , which provide excellent RDSON and 60V 26m 6.5Agate charge for most of the synchronous buck -60V 60m -4.5Aconverter applications . The WSP6067 meet the RoHS and Green Applications Product requi