SE1002. Аналоги и основные параметры
Наименование производителя: SE1002
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 45 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 4 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 125 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 200 MHz
Ёмкость коллекторного перехода (Cc): 4 pf
Статический коэффициент передачи тока (hFE): 100
Корпус транзистора: TO106
Аналоги (замена) для SE1002
- подборⓘ биполярного транзистора по параметрам
SE1002 даташит
0.1. Size:338K cn sino-ic
se100250gts.pdf 

SE100250GTS N-Channel Enhancement-Mode MOSFET Revision A General Description Features For a single MOSFET Advanced trench technology to provide excellent RDS(ON), low gate charge and V = 100V DS low operation voltage. This device is R =2.5m @V =10V DS(ON) GS suitable for using as a load switch or in PWM applications. Simple Drive Requirement Small Package Outlin
9.1. Size:624K cn sino-ic
se10080a.pdf 

SE10080A N-Channel Enhancement-Mode MOSFET Revision A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche V =100V DS Voltage and Current Improved Shoot-Through R =9.9m @V =10V DS(ON) GS FOM Simple Drive Requirement Small Package Outline Surface Mount Device Pin configurations
9.2. Size:358K cn sino-ic
se100p60.pdf 

SE100P60 P-Channel Enhancement-Mode MOSFET Revision A General Description Features For a single MOSFET Advanced trench technology to provide excellent RDS(ON), low gate charge and V = -100V DS low operation voltage. This device is R =18m @V =-10V DS(ON) GS suitable for using as a load switch or in PWM applications. Simple Drive Requirement Small Package Outline
9.4. Size:470K cn sino-ic
se100150g.pdf 

SE100150G N-Channel Enhancement-Mode MOSFET Revision A General Description Features For a single MOSFET Advanced trench technology to provide excellent RDS(ON), low gate charge and low V =100V DS operation voltage. This device is suitable for R =3.5m @V =10V DS(ON) GS using as a load switch or in PWM applications. Simple Drive Requirement Small Package Outline
9.5. Size:399K cn sino-ic
se10015.pdf 

SE10015 N-Channel MOSFET Revision A General Description Features For a single MOSFET Advanced trench technology to provide excellent RDS(ON), low gate charge and V =100V DS low operation voltage. This device is R =67m @V =10V DS(ON) GS suitable for using as a load switch or in PWM applications. Simple Drive Requirement Small Package Outline Surface Mount De
9.6. Size:289K cn sino-ic
se100130ga.pdf 

SE100130GA N-Channel Enhancement-Mode MOSFET Revision A General Description Features This type used advanced trench technology and For a single MOSFET design to provide excellent R with low gate DS(ON) V =100V DS charge. R =4m @V =10V DS(ON) GS High density cell design for ultra low R DS(ON) Excellent package for good heat dissipation Pin configurations See Di
9.7. Size:576K cn sino-ic
se1003.pdf 

SE1003 N-Channel Enhancement-Mode MOSFET Revision A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche V = 100V DS Voltage and Current Improved Shoot-Through R = 230m @ V =10V DS(ON) GS FOM Simple Drive Requirement Small Package Outline Surface Mount Device Pin configurations
9.8. Size:418K cn sino-ic
se100130a.pdf 

SE100130A N-Channel Enhancement-Mode MOSFET Revision A General Description Features For a single MOSFET Advanced trench technology to provide excellent RDS(ON), low gate charge and V = 100V DS low operation voltage. This device is R =3.0m @V =10V DS(ON) GS suitable for using as a load switch or in PWM applications. Simple Drive Requirement Small Package Outline
9.9. Size:290K cn sino-ic
se100180ga.pdf 

SE100180GA N-Channel Enhancement-Mode MOSFET Revision A General Description Features For a single MOSFET Advanced trench technology to provide excellent RDS(ON), low gate charge and low V =100V DS operation voltage. This device is suitable for R =2.5m @V =10V DS(ON) GS using as a load switch or in PWM applications. Synchronous Rectification in SMPS Hard Switchin
9.10. Size:420K cn sino-ic
se10030a.pdf 

SE10030A N-Channel Enhancement-Mode MOSFET Revision A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche V =100V DS Voltage and Current Improved Shoot-Through R =25m @V =10V DS(ON) GS FOM Simple Drive Requirement Small Package Outline Surface Mount Device Pin configurations
Другие транзисторы: SDT9304, SDT9305, SDT9306, SDT9307, SDT9308, SDT9309, SE0566, SE1001, TIP35C, SE1022, SE1730, SE2001, SE2002, SE3001, SE3002, SE3005, SE4001