Биполярный транзистор SFT131P
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: SFT131P
Тип материала: Ge
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.55
W
Макcимально допустимое напряжение коллектор-база (Ucb): 30
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 15
V
Макcимальный постоянный ток коллектора (Ic): 0.5
A
Предельная температура PN-перехода (Tj): 75
°C
Граничная частота коэффициента передачи тока (ft): 1
MHz
Статический коэффициент передачи тока (hfe): 70
Аналоги (замена) для SFT131P
SFT131P
Datasheet (PDF)
9.1. Size:491K sanyo
sft1342.pdf 
SFT1342Ordering number : ENA1559SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceSFT1342ApplicationsFeatures Motor drive application. 4V drive.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --60 VGate-to-Source Voltage VGSS 20 VDrain Current (DC)
9.2. Size:486K sanyo
sft1341.pdf 
SFT1341Ordering number : ENA1444SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceSFT1341ApplicationsFeatures 1.8V drive.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --40 VGate-to-Source Voltage VGSS 10 VDrain Current (DC) ID --10 ADrain Current (P
9.3. Size:358K sanyo
sft1345.pdf 
SFT1345Ordering number : EN8987SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceSFT1345ApplicationsFeatures ON-resistance RDS(on)1=210m (typ.) Input Capacitance Ciss=1020pF(typ.) 4V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-
9.4. Size:361K sanyo
sft1350.pdf 
SFT1350Ordering number : ENA1874SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceSFT1350ApplicationsFeatures ON-resistance RDS(on)1=45m (typ.) Input Capacitance Ciss=590pF(typ.) 4.5V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain
9.5. Size:354K onsemi
sft1342.pdf 
Ordering number : ENA1559B SFT1342 Power MOSFET http://onsemi.com 60V, 62m, 12A, Single P-Channel Features Electrical Connection P-Channel Low On-Resistance High Speed Switching 2, 4 Low Gate Charge ESD Diode-Protected Gate Pb-free and RoHS Compliance 1Specifications Absolute Maximum Ratings at Ta = 25C 3Parameter Symbol Value UnitV
9.6. Size:412K onsemi
sft1345.pdf 
SFT1345 Power MOSFET 100V, 275m, 11A, Single P-Channel This P-Channel Power MOSFET is produced using ON Semiconductors www.onsemi.com trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features VDSS RDS(on) Max ID Ma
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