SFT131P Datasheet, Equivalent, Cross Reference Search
Type Designator: SFT131P
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.55 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 75 °C
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
SFT131P Transistor Equivalent Substitute - Cross-Reference Search
SFT131P Datasheet (PDF)
sft1342.pdf
SFT1342Ordering number : ENA1559SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceSFT1342ApplicationsFeatures Motor drive application. 4V drive.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --60 VGate-to-Source Voltage VGSS 20 VDrain Current (DC)
sft1341.pdf
SFT1341Ordering number : ENA1444SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceSFT1341ApplicationsFeatures 1.8V drive.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --40 VGate-to-Source Voltage VGSS 10 VDrain Current (DC) ID --10 ADrain Current (P
sft1345.pdf
SFT1345Ordering number : EN8987SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceSFT1345ApplicationsFeatures ON-resistance RDS(on)1=210m (typ.) Input Capacitance Ciss=1020pF(typ.) 4V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-
sft1350.pdf
SFT1350Ordering number : ENA1874SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceSFT1350ApplicationsFeatures ON-resistance RDS(on)1=45m (typ.) Input Capacitance Ciss=590pF(typ.) 4.5V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain
sft1342.pdf
Ordering number : ENA1559B SFT1342 Power MOSFET http://onsemi.com 60V, 62m, 12A, Single P-Channel Features Electrical Connection P-Channel Low On-Resistance High Speed Switching 2, 4 Low Gate Charge ESD Diode-Protected Gate Pb-free and RoHS Compliance 1Specifications Absolute Maximum Ratings at Ta = 25C 3Parameter Symbol Value UnitV
sft1345.pdf
SFT1345 Power MOSFET 100V, 275m, 11A, Single P-Channel This P-Channel Power MOSFET is produced using ON Semiconductors www.onsemi.com trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features VDSS RDS(on) Max ID Ma
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: 2N1838
